SG11201710836UA - Sputtering target material - Google Patents

Sputtering target material

Info

Publication number
SG11201710836UA
SG11201710836UA SG11201710836UA SG11201710836UA SG11201710836UA SG 11201710836U A SG11201710836U A SG 11201710836UA SG 11201710836U A SG11201710836U A SG 11201710836UA SG 11201710836U A SG11201710836U A SG 11201710836UA SG 11201710836U A SG11201710836U A SG 11201710836UA
Authority
SG
Singapore
Prior art keywords
target material
sputtering target
sputtering
target
Prior art date
Application number
SG11201710836UA
Other languages
English (en)
Inventor
Hiroyuki Hasegawa
Noriaki Matsubara
Original Assignee
Sanyo Special Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Special Steel Co Ltd filed Critical Sanyo Special Steel Co Ltd
Priority claimed from PCT/JP2016/069261 external-priority patent/WO2017002851A1/ja
Publication of SG11201710836UA publication Critical patent/SG11201710836UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0408—Light metal alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C22/00—Alloys based on manganese
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C23/00—Alloys based on magnesium
    • C22C23/02—Alloys based on magnesium with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C23/00—Alloys based on magnesium
    • C22C23/04—Alloys based on magnesium with zinc or cadmium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/05—Light metals
    • B22F2301/058—Magnesium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
SG11201710836UA 2015-06-29 2016-06-29 Sputtering target material SG11201710836UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015129474 2015-06-29
JP2016029731A JP6626732B2 (ja) 2015-06-29 2016-02-19 スパッタリングターゲット材
PCT/JP2016/069261 WO2017002851A1 (ja) 2015-06-29 2016-06-29 スパッタリングターゲット材

Publications (1)

Publication Number Publication Date
SG11201710836UA true SG11201710836UA (en) 2018-02-27

Family

ID=57829176

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201710836UA SG11201710836UA (en) 2015-06-29 2016-06-29 Sputtering target material

Country Status (5)

Country Link
US (1) US20180187291A1 (ja)
JP (1) JP6626732B2 (ja)
CN (1) CN107735504B (ja)
SG (1) SG11201710836UA (ja)
TW (1) TW201715052A (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7130447B2 (ja) * 2018-06-07 2022-09-05 株式会社神戸製鋼所 光情報記録媒体用記録層、光情報記録媒体、及びスパッタリングターゲット
TWI727322B (zh) * 2018-08-09 2021-05-11 日商Ｊｘ金屬股份有限公司 濺鍍靶及磁性膜
JP7419886B2 (ja) * 2019-03-20 2024-01-23 株式会社プロテリアル Ｍｏ合金ターゲット材およびその製造方法
CN109989045B (zh) * 2019-05-14 2021-07-30 沈阳东创贵金属材料有限公司 一种用于真空磁控溅射的铝银合金靶材及其制备方法
CN112647008A (zh) * 2020-12-16 2021-04-13 湘潭大学 一种AlCrMoNbTaTi高熵合金材料及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3716852C1 (de) * 1987-05-20 1988-07-14 Demetron Sputtertarget zur Erzeugung optisch transparenter Schichten und Verfahren zur Herstellung dieser Targets
US5534080A (en) * 1995-06-01 1996-07-09 National Science Council Of Republic Of China Method for producing Mn-Al thin films
JP4130451B2 (ja) * 1996-11-20 2008-08-06 株式会社東芝 交換結合膜とそれを用いた磁気抵抗効果素子および磁気装置
WO1998022636A1 (fr) * 1996-11-20 1998-05-28 Kabushiki Kaisha Toshiba Cible pour pulverisation, et film antiferromagnetique et element a effet magnetoresistant formes a l'aide de ladite cible
JP4231188B2 (ja) * 2000-03-28 2009-02-25 Ｎｅｃトーキン株式会社 Ｎｉ−Ｍｎ−Ｇａ系形状記憶合金薄膜とその製造方法
JP3973857B2 (ja) * 2001-04-16 2007-09-12 日鉱金属株式会社 マンガン合金スパッタリングターゲットの製造方法
JP4175829B2 (ja) * 2002-04-22 2008-11-05 株式会社東芝 記録媒体用スパッタリングターゲットと磁気記録媒体
US20060078457A1 (en) * 2004-10-12 2006-04-13 Heraeus, Inc. Low oxygen content alloy compositions
JP2009074127A (ja) * 2007-09-20 2009-04-09 Kojundo Chem Lab Co Ltd 焼結スパッタリングターゲット材およびその製造方法
CN101705423A (zh) * 2009-11-25 2010-05-12 首钢总公司 一种低成本建筑结构用钢板及其生产方法
JP5632821B2 (ja) * 2011-12-06 2014-11-26 株式会社神戸製鋼所 タッチパネルセンサー用Ｃｕ合金配線膜、及びその製造方法、並びにタッチパネルセンサー
WO2013158635A1 (en) * 2012-04-16 2013-10-24 The Board Of Trustees Of The University Of Alabama For And On Behalf Of The University Of Alabama Non-rare earth magnets having manganese (mn) and bismuth (bi) alloyed with cobalt (co)
KR20150108913A (ko) * 2013-01-24 2015-09-30 바스프 에스이 최적화된 재료 배치를 통한 자기열량 캐스케이드의 성능 향상
CN115094390A (zh) * 2014-09-30 2022-09-23 捷客斯金属株式会社 溅射靶用母合金和溅射靶的制造方法

Also Published As

Publication number Publication date
CN107735504B (zh) 2019-11-01
TW201715052A (zh) 2017-05-01
CN107735504A (zh) 2018-02-23
JP6626732B2 (ja) 2019-12-25
US20180187291A1 (en) 2018-07-05
JP2017014612A (ja) 2017-01-19

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