SG11201704945YA - Method for producing multicrystalline silicon - Google Patents

Method for producing multicrystalline silicon

Info

Publication number
SG11201704945YA
SG11201704945YA SG11201704945YA SG11201704945YA SG11201704945YA SG 11201704945Y A SG11201704945Y A SG 11201704945YA SG 11201704945Y A SG11201704945Y A SG 11201704945YA SG 11201704945Y A SG11201704945Y A SG 11201704945YA SG 11201704945Y A SG11201704945Y A SG 11201704945YA
Authority
SG
Singapore
Prior art keywords
multicrystalline silicon
producing multicrystalline
producing
silicon
multicrystalline
Prior art date
Application number
SG11201704945YA
Other languages
English (en)
Inventor
Karl Hesse
Erich Dornberger
Christian Reimann
Original Assignee
Wacker Chemie Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie Ag filed Critical Wacker Chemie Ag
Publication of SG11201704945YA publication Critical patent/SG11201704945YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
SG11201704945YA 2015-02-05 2016-01-29 Method for producing multicrystalline silicon SG11201704945YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015201988.8A DE102015201988A1 (de) 2015-02-05 2015-02-05 Verfahren zur Herstellung von multikristallinem Silicium
PCT/EP2016/051995 WO2016124509A1 (de) 2015-02-05 2016-01-29 Verfahren zur herstellung von multikristallinem silicium

Publications (1)

Publication Number Publication Date
SG11201704945YA true SG11201704945YA (en) 2017-08-30

Family

ID=55272489

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201704945YA SG11201704945YA (en) 2015-02-05 2016-01-29 Method for producing multicrystalline silicon

Country Status (9)

Country Link
EP (1) EP3253908A1 (de)
JP (2) JP6517355B2 (de)
KR (1) KR101954785B1 (de)
CN (1) CN107208308B (de)
DE (1) DE102015201988A1 (de)
MY (1) MY183217A (de)
SG (1) SG11201704945YA (de)
TW (1) TWI591217B (de)
WO (1) WO2016124509A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102366166B1 (ko) * 2021-08-18 2022-02-23 주식회사 린텍 단결정 및 다결정 로드에 의해 도가니 내부에 산소 배출 통로를 형성하는 다결정 실리콘 잉곳 제조방법
CN113716878B (zh) * 2021-09-10 2023-06-16 湖南倍晶新材料科技有限公司 一种石英表面复合涂层及其制备方法

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JPH02233514A (ja) 1989-03-06 1990-09-17 Osaka Titanium Co Ltd 多結晶シリコンの製造方法
AU2005310598B2 (en) * 2004-11-30 2009-12-03 Noritake Tcf Co., Ltd. Process for producing polycrystalline silicon ingot
EP2454398A2 (de) * 2009-07-16 2012-05-23 MEMC Singapore Pte. Ltd. Beschichtete tiegel sowie verfahren zu ihrer herstellung und verwendung
DE102010000687B4 (de) 2010-01-05 2012-10-18 Solarworld Innovations Gmbh Tiegel und Verfahren zur Herstellung von Silizium-Blöcken
DE102011003578A1 (de) 2010-02-25 2011-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken
US20110239933A1 (en) 2010-04-01 2011-10-06 Bernhard Freudenberg Device and method for the production of silicon blocks
DE102011002598B4 (de) * 2011-01-12 2016-10-06 Solarworld Innovations Gmbh Verfahren zur Herstellung eines Silizium-Ingots
DE102011002599B4 (de) 2011-01-12 2016-06-23 Solarworld Innovations Gmbh Verfahren zur Herstellung eines Silizium-Ingots und Silizium-Ingot
TWI441962B (zh) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc 矽晶鑄錠及其製造方法（一）
CN103088418B (zh) * 2011-11-01 2015-07-08 昆山中辰矽晶有限公司 硅晶铸锭及其制造方法
US9493357B2 (en) 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
DE102011087759B4 (de) 2011-12-05 2018-11-08 Solarworld Industries Gmbh Verfahren zur Herstellung von Silizium-Ingots und Silizium-Ingot
US20130193559A1 (en) * 2012-01-27 2013-08-01 Memc Singapore Pte. Ltd. (Uen200614794D) CAST SILICON ingot prepared BY DIRECTIONAL SOLIDIFICATION
TWI580825B (zh) * 2012-01-27 2017-05-01 Ｍｅｍｃ新加坡有限公司 藉由定向固化作用製備鑄態矽之方法
TWI620838B (zh) * 2012-02-15 2018-04-11 中美矽晶製品股份有限公司 包含成核促進顆粒之矽晶鑄錠及其製造方法
CN102776555B (zh) * 2012-04-01 2015-11-18 江西赛维Ldk太阳能高科技有限公司 一种多晶硅锭及其制备方法和多晶硅片
CN103074669B (zh) * 2013-01-29 2015-05-13 江西赛维Ldk太阳能高科技有限公司 多晶硅锭及其制备方法和多晶硅片
CN102776561B (zh) * 2012-04-01 2017-12-15 江西赛维Ldk太阳能高科技有限公司 多晶硅锭及其制备方法、多晶硅片和多晶硅铸锭用坩埚
DE102012206439A1 (de) * 2012-04-19 2013-10-24 Wacker Chemie Ag Polykristallines Siliciumgranulat und seine Herstellung
DE102012207505A1 (de) 2012-05-07 2013-11-07 Wacker Chemie Ag Polykristallines Siliciumgranulat und seine Herstellung
WO2014037965A1 (en) 2012-09-05 2014-03-13 MEMC ELECTRONIC METERIALS S.p.A. Method of loading a charge of polysilicon into a crucible
TWI541393B (zh) 2012-12-28 2016-07-11 中美矽晶製品股份有限公司 用於製造矽晶鑄錠之晶種
CN103361722B (zh) * 2013-07-23 2016-03-02 江西赛维Ldk太阳能高科技有限公司 多晶硅锭及其制备方法、多晶硅片和多晶硅铸锭用坩埚
CN103834994A (zh) * 2014-03-13 2014-06-04 江西赛维Ldk太阳能高科技有限公司 多晶硅锭及其制备方法和多晶硅片

Also Published As

Publication number Publication date
JP6517355B2 (ja) 2019-05-22
JP2019069898A (ja) 2019-05-09
TWI591217B (zh) 2017-07-11
KR20170094317A (ko) 2017-08-17
KR101954785B1 (ko) 2019-03-06
JP2018504359A (ja) 2018-02-15
EP3253908A1 (de) 2017-12-13
WO2016124509A1 (de) 2016-08-11
CN107208308B (zh) 2020-05-15
DE102015201988A1 (de) 2016-08-11
MY183217A (en) 2021-02-18
TW201629278A (zh) 2016-08-16
CN107208308A (zh) 2017-09-26

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