SG11201704516QA - Structure for radiofrequency applications - Google Patents

Structure for radiofrequency applications

Info

Publication number
SG11201704516QA
SG11201704516QA SG11201704516QA SG11201704516QA SG11201704516QA SG 11201704516Q A SG11201704516Q A SG 11201704516QA SG 11201704516Q A SG11201704516Q A SG 11201704516QA SG 11201704516Q A SG11201704516Q A SG 11201704516QA SG 11201704516Q A SG11201704516Q A SG 11201704516QA
Authority
SG
Singapore
Prior art keywords
radiofrequency applications
radiofrequency
applications
Prior art date
Application number
SG11201704516QA
Other languages
English (en)
Inventor
Oleg Kononchuk
Didier Landru
Christophe Figuet
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201704516QA publication Critical patent/SG11201704516QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/03—Constructional details, e.g. casings, housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/66—Selection of materials
    • H01M4/663—Selection of materials containing carbon or carbonaceous materials as conductive part, e.g. graphite, carbon fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Micromachines (AREA)
SG11201704516QA 2014-12-04 2015-09-17 Structure for radiofrequency applications SG11201704516QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1402801A FR3029682B1 (fr) 2014-12-04 2014-12-04 Substrat semi-conducteur haute resistivite et son procede de fabrication
PCT/FR2015/052494 WO2016087728A1 (fr) 2014-12-04 2015-09-17 Structure pour applications radiofréquences

Publications (1)

Publication Number Publication Date
SG11201704516QA true SG11201704516QA (en) 2017-07-28

Family

ID=53039463

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201704516QA SG11201704516QA (en) 2014-12-04 2015-09-17 Structure for radiofrequency applications

Country Status (8)

Country Link
US (1) US10250282B2 (enExample)
EP (2) EP3872839A1 (enExample)
JP (1) JP6612872B2 (enExample)
KR (1) KR102395398B1 (enExample)
CN (1) CN107004572B (enExample)
FR (1) FR3029682B1 (enExample)
SG (1) SG11201704516QA (enExample)
WO (1) WO2016087728A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3037438B1 (fr) 2015-06-09 2017-06-16 Soitec Silicon On Insulator Procede de fabrication d'un element semi-conducteur comprenant une couche de piegeage de charges
US10541667B2 (en) * 2015-08-25 2020-01-21 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator having trap-rich region
US10530327B2 (en) * 2015-08-25 2020-01-07 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
US10523178B2 (en) 2015-08-25 2019-12-31 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
US10181428B2 (en) * 2015-08-28 2019-01-15 Skyworks Solutions, Inc. Silicon on porous silicon
EP3144958B1 (en) 2015-09-17 2021-03-17 Soitec Structure for radiofrequency applications and process for manufacturing such a structure
EP3422831B1 (en) * 2016-02-25 2021-12-01 Zeon Corporation Heat conductive sheet and a heat dissipation device
FR3053532B1 (fr) * 2016-06-30 2018-11-16 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
FR3058561B1 (fr) * 2016-11-04 2018-11-02 Soitec Procede de fabrication d'un element semi-conducteur comprenant un substrat hautement resistif
FR3062238A1 (fr) 2017-01-26 2018-07-27 Soitec Support pour une structure semi-conductrice
FR3062517B1 (fr) 2017-02-02 2019-03-15 Soitec Structure pour application radiofrequence
US10784348B2 (en) 2017-03-23 2020-09-22 Qualcomm Incorporated Porous semiconductor handle substrate
US11063117B2 (en) * 2017-04-20 2021-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having carrier-trapping layers with different grain sizes
FR3067517B1 (fr) 2017-06-13 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Substrat soi compatible avec les technologies rfsoi et fdsoi
FR3079662B1 (fr) * 2018-03-30 2020-02-28 Soitec Substrat pour applications radiofrequences et procede de fabrication associe
JP6827442B2 (ja) * 2018-06-14 2021-02-10 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法及び貼り合わせｓｏｉウェーハ
CN112236853B (zh) * 2018-07-05 2024-09-13 索泰克公司 用于集成射频器件的衬底及其制造方法
FR3098642B1 (fr) 2019-07-12 2021-06-11 Soitec Silicon On Insulator procédé de fabrication d'une structure comprenant une couche mince reportée sur un support muni d’une couche de piégeage de charges
JP2022541172A (ja) * 2019-07-19 2022-09-22 アイキューイー ピーエルシー 調整可能な誘電率及び調整可能な熱伝導率を有する半導体材料
CN113629182A (zh) * 2020-05-08 2021-11-09 济南晶正电子科技有限公司 一种tc-saw复合衬底及其制备方法
CN111884616B (zh) * 2020-07-23 2021-04-13 中国科学院上海微系统与信息技术研究所 一种衬底基板/压电材料薄膜结构及其制备方法和应用
US20220116014A1 (en) * 2020-10-13 2022-04-14 RF360 Europe GmbH Surface acoustic wave (saw) device with high permittivity dielectric for intermodulation distortion improvement
CN112260660B (zh) * 2020-10-21 2023-03-03 济南晶正电子科技有限公司 一种复合基底、复合薄膜及其制备方法
FR3117668B1 (fr) 2020-12-16 2022-12-23 Commissariat Energie Atomique Structure amelioree de substrat rf et procede de realisation
CN112750686B (zh) * 2020-12-30 2021-12-07 济南晶正电子科技有限公司 一种多层衬底、电子元器件及多层衬底制备方法
JP2023054965A (ja) * 2021-10-05 2023-04-17 信越半導体株式会社 シリコンウエーハ及びｓｏｉウエーハ並びにそれらの製造方法
FR3136325B1 (fr) * 2022-06-02 2025-10-03 Soitec Silicon On Insulator Dispositif a ondes elastiques de surface
WO2023232562A1 (fr) * 2022-06-02 2023-12-07 Soitec Procédé de fabrication d'un dispositif à ondes élastiques de surface

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Publication number Priority date Publication date Assignee Title
US5637883A (en) * 1995-02-27 1997-06-10 The United States Of America As Represented By The Secretary Of The Navy Optically addressed spatial light modulator using an intrinsic semiconductor active material and high resistivity cladding layers
KR20060118437A (ko) * 2003-09-26 2006-11-23 위니베르시트카솔리끄드루뱅 저항손을 감소시키는 다층 반도체 구조의 제조 방법
JP4983010B2 (ja) * 2005-11-30 2012-07-25 富士通株式会社 圧電素子及びその製造方法
JP2009231376A (ja) * 2008-03-19 2009-10-08 Shin Etsu Handotai Co Ltd Ｓｏｉウェーハ及び半導体デバイスならびにｓｏｉウェーハの製造方法
CN103348473B (zh) * 2010-12-24 2016-04-06 斯兰纳半导体美国股份有限公司 用于半导体装置的富陷阱层
US8536021B2 (en) * 2010-12-24 2013-09-17 Io Semiconductor, Inc. Trap rich layer formation techniques for semiconductor devices
FR2973158B1 (fr) * 2011-03-22 2014-02-28 Soitec Silicon On Insulator Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences
KR101876579B1 (ko) * 2012-09-13 2018-07-10 매그나칩 반도체 유한회사 전력용 반도체 소자 및 그 소자의 제조 방법

Also Published As

Publication number Publication date
JP2018501651A (ja) 2018-01-18
CN107004572B (zh) 2020-05-22
EP3227905B1 (fr) 2021-08-18
FR3029682B1 (fr) 2017-12-29
US20170331501A1 (en) 2017-11-16
EP3227905A1 (fr) 2017-10-11
CN107004572A (zh) 2017-08-01
KR102395398B1 (ko) 2022-05-10
US10250282B2 (en) 2019-04-02
FR3029682A1 (fr) 2016-06-10
KR20170091627A (ko) 2017-08-09
EP3872839A1 (fr) 2021-09-01
JP6612872B2 (ja) 2019-11-27
WO2016087728A1 (fr) 2016-06-09

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