FR3136325B1 - Dispositif a ondes elastiques de surface - Google Patents

Dispositif a ondes elastiques de surface

Info

Publication number
FR3136325B1
FR3136325B1 FR2205313A FR2205313A FR3136325B1 FR 3136325 B1 FR3136325 B1 FR 3136325B1 FR 2205313 A FR2205313 A FR 2205313A FR 2205313 A FR2205313 A FR 2205313A FR 3136325 B1 FR3136325 B1 FR 3136325B1
Authority
FR
France
Prior art keywords
layer
elastic wave
wave device
surface elastic
piezoelectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2205313A
Other languages
English (en)
Other versions
FR3136325A1 (fr
Inventor
Sylvain Ballandras
Thierry Laroche
Florent Bernard
Emilie Courjon
Saly N'diaye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2205313A priority Critical patent/FR3136325B1/fr
Priority to CN202380044070.4A priority patent/CN119301873A/zh
Priority to EP23727382.6A priority patent/EP4533661A1/fr
Priority to PCT/EP2023/063810 priority patent/WO2023232562A1/fr
Publication of FR3136325A1 publication Critical patent/FR3136325A1/fr
Application granted granted Critical
Publication of FR3136325B1 publication Critical patent/FR3136325B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02566—Characteristics of substrate, e.g. cutting angles of semiconductor substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L’invention concerne un dispositif (1) à ondes élastiques de surface qui comprend : - un substrat composite (2) qui comprend une couche de matériau piézoélectrique (5), une couche de matériau diélectrique(7), une couche de piégeage (8) et un substrat support (S); - au moins un transducteur électroacoustique formé sur dans la couche de matériau piézoélectrique (5) ; le dispositif (1) à ondes élastiques de surface étant caractérisé en ce que le substrat composite comprend une couche additionnelle (6) intercalée entre la couche de matériau piézoélectrique (5) et la couche de matériau diélectrique (7), la couche additionnelle (6) étant choisie de sorte que la vitesse de phase d’une onde élastique soit supérieure aux vitesses de phase de la même onde élastique dans l’une et l’autre de la couche de matériau diélectrique et de la couche de matériau piézoélectrique. Figure 1
FR2205313A 2022-06-02 2022-06-02 Dispositif a ondes elastiques de surface Active FR3136325B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2205313A FR3136325B1 (fr) 2022-06-02 2022-06-02 Dispositif a ondes elastiques de surface
CN202380044070.4A CN119301873A (zh) 2022-06-02 2023-05-23 表面弹性波器件的制造方法
EP23727382.6A EP4533661A1 (fr) 2022-06-02 2023-05-23 Procédé de fabrication d'un dispositif à ondes élastiques de surface
PCT/EP2023/063810 WO2023232562A1 (fr) 2022-06-02 2023-05-23 Procédé de fabrication d'un dispositif à ondes élastiques de surface

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2205313A FR3136325B1 (fr) 2022-06-02 2022-06-02 Dispositif a ondes elastiques de surface
FR2205313 2022-06-02

Publications (2)

Publication Number Publication Date
FR3136325A1 FR3136325A1 (fr) 2023-12-08
FR3136325B1 true FR3136325B1 (fr) 2025-10-03

Family

ID=82943028

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2205313A Active FR3136325B1 (fr) 2022-06-02 2022-06-02 Dispositif a ondes elastiques de surface

Country Status (1)

Country Link
FR (1) FR3136325B1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5648695B2 (ja) 2010-12-24 2015-01-07 株式会社村田製作所 弾性波装置及びその製造方法
FR3029682B1 (fr) * 2014-12-04 2017-12-29 Soitec Silicon On Insulator Substrat semi-conducteur haute resistivite et son procede de fabrication
FR3037443B1 (fr) * 2015-06-12 2018-07-13 Soitec Heterostructure et methode de fabrication
FR3062517B1 (fr) * 2017-02-02 2019-03-15 Soitec Structure pour application radiofrequence
WO2018151147A1 (fr) * 2017-02-14 2018-08-23 京セラ株式会社 Élément à onde élastique
US11979139B2 (en) * 2018-12-20 2024-05-07 Sanan Japan Technology Corporation Elastic wave device, elastic waves filter, duplexer, and module

Also Published As

Publication number Publication date
FR3136325A1 (fr) 2023-12-08

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