SG11201610342YA - Chemistries for tsv/mems/power device etching - Google Patents
Chemistries for tsv/mems/power device etchingInfo
- Publication number
- SG11201610342YA SG11201610342YA SG11201610342YA SG11201610342YA SG11201610342YA SG 11201610342Y A SG11201610342Y A SG 11201610342YA SG 11201610342Y A SG11201610342Y A SG 11201610342YA SG 11201610342Y A SG11201610342Y A SG 11201610342YA SG 11201610342Y A SG11201610342Y A SG 11201610342YA
- Authority
- SG
- Singapore
- Prior art keywords
- tsv
- chemistries
- mems
- power device
- device etching
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462013959P | 2014-06-18 | 2014-06-18 | |
| PCT/JP2015/003044 WO2015194178A1 (en) | 2014-06-18 | 2015-06-17 | Chemistries for tsv/mems/power device etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201610342YA true SG11201610342YA (en) | 2017-01-27 |
Family
ID=54935182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201610342YA SG11201610342YA (en) | 2014-06-18 | 2015-06-17 | Chemistries for tsv/mems/power device etching |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US9892932B2 (de) |
| EP (1) | EP3158579A4 (de) |
| JP (1) | JP6485972B2 (de) |
| KR (3) | KR102679289B1 (de) |
| CN (2) | CN106663624B (de) |
| SG (1) | SG11201610342YA (de) |
| TW (3) | TWI658509B (de) |
| WO (1) | WO2015194178A1 (de) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI658509B (zh) * | 2014-06-18 | 2019-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 |
| JP6960400B2 (ja) | 2015-11-10 | 2021-11-05 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | エッチング反応物質、およびそれを使用するプラズマフリーの酸化物エッチング方法 |
| JP6587580B2 (ja) * | 2016-06-10 | 2019-10-09 | 東京エレクトロン株式会社 | エッチング処理方法 |
| WO2018186364A1 (ja) * | 2017-04-06 | 2018-10-11 | 関東電化工業株式会社 | ドライエッチングガス組成物及びドライエッチング方法 |
| KR102594444B1 (ko) * | 2017-06-08 | 2023-10-25 | 도쿄엘렉트론가부시키가이샤 | 황 기반 화학물을 이용한 실리콘 함유 유기 막의 플라즈마 에칭 방법 |
| TWI757545B (zh) * | 2017-09-15 | 2022-03-11 | 日商關東電化工業股份有限公司 | 使用酸鹵化物之原子層蝕刻 |
| US10607999B2 (en) * | 2017-11-03 | 2020-03-31 | Varian Semiconductor Equipment Associates, Inc. | Techniques and structure for forming dynamic random access device |
| KR102504833B1 (ko) * | 2017-11-16 | 2023-03-02 | 삼성전자 주식회사 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법 |
| JP7145031B2 (ja) * | 2017-12-25 | 2022-09-30 | 東京エレクトロン株式会社 | 基板を処理する方法、プラズマ処理装置、及び基板処理装置 |
| KR102450580B1 (ko) | 2017-12-22 | 2022-10-07 | 삼성전자주식회사 | 금속 배선 하부의 절연층 구조를 갖는 반도체 장치 |
| CN110010464B (zh) * | 2017-12-25 | 2023-07-14 | 东京毅力科创株式会社 | 处理基板的方法 |
| JP6874778B2 (ja) * | 2019-01-09 | 2021-05-19 | ダイキン工業株式会社 | シクロブタンの製造方法 |
| JP6959999B2 (ja) * | 2019-04-19 | 2021-11-05 | 株式会社日立ハイテク | プラズマ処理方法 |
| US11456180B2 (en) | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
| CN112786441A (zh) | 2019-11-08 | 2021-05-11 | 东京毅力科创株式会社 | 蚀刻方法及等离子体处理装置 |
| WO2021090798A1 (ja) * | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| SG10202010798QA (en) * | 2019-11-08 | 2021-06-29 | Tokyo Electron Ltd | Etching method and plasma processing apparatus |
| KR102389081B1 (ko) * | 2020-04-06 | 2022-04-20 | 아주대학교산학협력단 | PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법 |
| KR102388963B1 (ko) * | 2020-05-07 | 2022-04-20 | 아주대학교산학협력단 | 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법 |
| KR102244862B1 (ko) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법 |
| US20230230810A1 (en) * | 2020-10-05 | 2023-07-20 | Spp Technologies Co., Ltd. | Plasma processing gas, plasma processing method, and plasma processing apparatus |
| JPWO2022080271A1 (de) * | 2020-10-15 | 2022-04-21 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03154337A (ja) * | 1989-11-13 | 1991-07-02 | Hitachi Ltd | 半導体装置の製造方法 |
| DE4241045C1 (de) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| DE19736370C2 (de) | 1997-08-21 | 2001-12-06 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silizium |
| US6074959A (en) * | 1997-09-19 | 2000-06-13 | Applied Materials, Inc. | Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide |
| DE19826382C2 (de) | 1998-06-12 | 2002-02-07 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| US6284666B1 (en) | 2000-05-31 | 2001-09-04 | International Business Machines Corporation | Method of reducing RIE lag for deep trench silicon etching |
| US6569774B1 (en) | 2000-08-31 | 2003-05-27 | Micron Technology, Inc. | Method to eliminate striations and surface roughness caused by dry etch |
| JP2002110647A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6746961B2 (en) * | 2001-06-19 | 2004-06-08 | Lam Research Corporation | Plasma etching of dielectric layer with etch profile control |
| US6900136B2 (en) | 2002-03-08 | 2005-05-31 | Industrial Technology Research Institute | Method for reducing reactive ion etching (RIE) lag in semiconductor fabrication processes |
| US6916746B1 (en) * | 2003-04-09 | 2005-07-12 | Lam Research Corporation | Method for plasma etching using periodic modulation of gas chemistry |
| US7453150B1 (en) * | 2004-04-01 | 2008-11-18 | Rensselaer Polytechnic Institute | Three-dimensional face-to-face integration assembly |
| WO2005112092A2 (en) | 2004-05-11 | 2005-11-24 | Applied Materials, Inc. | CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY |
| US7755197B2 (en) * | 2006-02-10 | 2010-07-13 | Macronix International Co., Ltd. | UV blocking and crack protecting passivation layer |
| JP2008270348A (ja) * | 2007-04-17 | 2008-11-06 | Seiko Epson Corp | ドライエッチング装置及び被加工物の加工方法 |
| CN100468664C (zh) * | 2007-05-18 | 2009-03-11 | 西安交通大学 | 氧化锌紫外焦平面成像阵列制作工艺中的化学刻蚀方法 |
| US20090068767A1 (en) | 2007-09-12 | 2009-03-12 | Lam Research Corporation | Tuning via facet with minimal rie lag |
| JP5192214B2 (ja) * | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置および基板処理方法 |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| JP4978512B2 (ja) * | 2008-02-29 | 2012-07-18 | 日本ゼオン株式会社 | プラズマエッチング方法 |
| CA2752263A1 (en) * | 2009-03-06 | 2010-09-10 | Solvay Fluor Gmbh | Use of unsaturated hydrofluorocarbons |
| EP2511948A4 (de) * | 2010-02-01 | 2014-07-02 | Central Glass Co Ltd | Trockenätzmittel und trockenätzverfahren damit |
| US8574447B2 (en) * | 2010-03-31 | 2013-11-05 | Lam Research Corporation | Inorganic rapid alternating process for silicon etch |
| JP2013030531A (ja) * | 2011-07-27 | 2013-02-07 | Central Glass Co Ltd | ドライエッチング剤 |
| US8808563B2 (en) * | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
| US8652969B2 (en) * | 2011-10-26 | 2014-02-18 | International Business Machines Corporation | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate |
| TWI588240B (zh) | 2012-10-30 | 2017-06-21 | 液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用於高縱橫比氧化物蝕刻之氟碳分子 |
| CN103824767B (zh) | 2012-11-16 | 2017-05-17 | 中微半导体设备(上海)有限公司 | 一种深硅通孔的刻蚀方法 |
| JP6017936B2 (ja) * | 2012-11-27 | 2016-11-02 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| KR102275996B1 (ko) | 2013-03-28 | 2021-07-14 | 더 케무어스 컴퍼니 에프씨, 엘엘씨 | 하이드로플루오로올레핀 식각 가스 혼합물 |
| TWI642809B (zh) | 2013-09-09 | 2018-12-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用蝕刻氣體蝕刻半導體結構的方法 |
| WO2015053339A1 (ja) | 2013-10-09 | 2015-04-16 | 旭硝子株式会社 | ２，３，３，３－テトラフルオロプロペンの精製方法 |
| TWI658509B (zh) * | 2014-06-18 | 2019-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 |
-
2015
- 2015-06-12 TW TW104119063A patent/TWI658509B/zh active
- 2015-06-12 TW TW108109359A patent/TWI695423B/zh active
- 2015-06-12 TW TW109114840A patent/TWI733431B/zh active
- 2015-06-17 JP JP2016571169A patent/JP6485972B2/ja active Active
- 2015-06-17 EP EP15808907.8A patent/EP3158579A4/de not_active Withdrawn
- 2015-06-17 KR KR1020237017666A patent/KR102679289B1/ko active IP Right Grant
- 2015-06-17 CN CN201580031726.4A patent/CN106663624B/zh active Active
- 2015-06-17 CN CN202010698443.8A patent/CN111816559B/zh active Active
- 2015-06-17 KR KR1020177000840A patent/KR102444697B1/ko active IP Right Grant
- 2015-06-17 US US15/316,932 patent/US9892932B2/en active Active
- 2015-06-17 WO PCT/JP2015/003044 patent/WO2015194178A1/en active Application Filing
- 2015-06-17 KR KR1020227030041A patent/KR102539241B1/ko active IP Right Grant
- 2015-06-17 SG SG11201610342YA patent/SG11201610342YA/en unknown
-
2017
- 2017-09-08 US US15/699,668 patent/US10103031B2/en active Active
-
2018
- 2018-08-28 US US16/114,371 patent/US10720335B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI695423B (zh) | 2020-06-01 |
| KR102444697B1 (ko) | 2022-09-16 |
| US9892932B2 (en) | 2018-02-13 |
| JP2017518645A (ja) | 2017-07-06 |
| TW201606867A (zh) | 2016-02-16 |
| US20180076046A1 (en) | 2018-03-15 |
| TWI658509B (zh) | 2019-05-01 |
| CN106663624A (zh) | 2017-05-10 |
| JP6485972B2 (ja) | 2019-03-20 |
| TW202030312A (zh) | 2020-08-16 |
| US10103031B2 (en) | 2018-10-16 |
| KR102679289B1 (ko) | 2024-06-27 |
| TWI733431B (zh) | 2021-07-11 |
| US20170103901A1 (en) | 2017-04-13 |
| CN111816559B (zh) | 2024-06-11 |
| KR20230079491A (ko) | 2023-06-07 |
| EP3158579A4 (de) | 2018-02-21 |
| US20180366336A1 (en) | 2018-12-20 |
| KR20220124825A (ko) | 2022-09-14 |
| CN106663624B (zh) | 2020-08-14 |
| US10720335B2 (en) | 2020-07-21 |
| CN111816559A (zh) | 2020-10-23 |
| EP3158579A1 (de) | 2017-04-26 |
| WO2015194178A1 (en) | 2015-12-23 |
| KR20170020434A (ko) | 2017-02-22 |
| KR102539241B1 (ko) | 2023-06-01 |
| TW201929071A (zh) | 2019-07-16 |
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