SG11201609064XA - Composition for gap formation, and semiconductor device comprising gaps formed using the composition, and method for producing semiconductor device using the composition - Google Patents
Composition for gap formation, and semiconductor device comprising gaps formed using the composition, and method for producing semiconductor device using the compositionInfo
- Publication number
- SG11201609064XA SG11201609064XA SG11201609064XA SG11201609064XA SG11201609064XA SG 11201609064X A SG11201609064X A SG 11201609064XA SG 11201609064X A SG11201609064X A SG 11201609064XA SG 11201609064X A SG11201609064X A SG 11201609064XA SG 11201609064X A SG11201609064X A SG 11201609064XA
- Authority
- SG
- Singapore
- Prior art keywords
- composition
- semiconductor device
- gaps formed
- gap formation
- producing
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
- C08L65/02—Polyphenylenes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
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- C—CHEMISTRY; METALLURGY
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
- C08L71/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08L71/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
- C08L71/12—Polyphenylene oxides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
- C08L77/10—Polyamides derived from aromatically bound amino and carboxyl groups of amino-carboxylic acids or of polyamines and polycarboxylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/02—Polyamines
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/02—Polythioethers; Polythioether-ethers
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- C—CHEMISTRY; METALLURGY
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/06—Polysulfones; Polyethersulfones
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L85/00—Compositions of macromolecular compounds obtained by reactions forming a linkage in the main chain of the macromolecule containing atoms other than silicon, sulfur, nitrogen, oxygen and carbon; Compositions of derivatives of such polymers
- C08L85/02—Compositions of macromolecular compounds obtained by reactions forming a linkage in the main chain of the macromolecule containing atoms other than silicon, sulfur, nitrogen, oxygen and carbon; Compositions of derivatives of such polymers containing phosphorus
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L85/00—Compositions of macromolecular compounds obtained by reactions forming a linkage in the main chain of the macromolecule containing atoms other than silicon, sulfur, nitrogen, oxygen and carbon; Compositions of derivatives of such polymers
- C08L85/04—Compositions of macromolecular compounds obtained by reactions forming a linkage in the main chain of the macromolecule containing atoms other than silicon, sulfur, nitrogen, oxygen and carbon; Compositions of derivatives of such polymers containing boron
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/11—Homopolymers
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/312—Non-condensed aromatic systems, e.g. benzene
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/316—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain bridged by heteroatoms, e.g. N, P, Si or B
- C08G2261/3162—Arylamines
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
- C08G2650/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type containing oxygen in addition to the ether group
- C08G2650/40—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type containing oxygen in addition to the ether group containing ketone groups, e.g. polyarylethylketones, PEEK or PEK
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/02—Polyamines
- C08G73/026—Wholly aromatic polyamines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014111552 | 2014-05-29 | ||
PCT/JP2015/065030 WO2015182581A1 (ja) | 2014-05-29 | 2015-05-26 | 空隙形成用組成物、その組成物を用いて形成された空隙を具備した半導体装置、およびその組成物を用いた半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201609064XA true SG11201609064XA (en) | 2016-12-29 |
Family
ID=54698906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201609064XA SG11201609064XA (en) | 2014-05-29 | 2015-05-26 | Composition for gap formation, and semiconductor device comprising gaps formed using the composition, and method for producing semiconductor device using the composition |
Country Status (9)
Country | Link |
---|---|
US (1) | US10435555B2 (zh) |
EP (1) | EP3150668A4 (zh) |
JP (1) | JP6573876B2 (zh) |
KR (1) | KR20170013939A (zh) |
CN (1) | CN106471057A (zh) |
IL (1) | IL248722A0 (zh) |
SG (1) | SG11201609064XA (zh) |
TW (1) | TW201607986A (zh) |
WO (1) | WO2015182581A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016148777A (ja) * | 2015-02-12 | 2016-08-18 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 下層膜形成用組成物、およびそれを用いた下層膜の形成方法 |
US20190048129A1 (en) | 2016-02-11 | 2019-02-14 | Az Electronic Materials (Luxembourg) S.A.R.L. | A polymer, composition, forming sacrificial layer and method for semiconductor device therewith |
WO2019018446A1 (en) | 2017-07-17 | 2019-01-24 | Fractal Heatsink Technologies, LLC | SYSTEM AND METHOD FOR MULTI-FRACTAL THERMAL DISSIPATOR |
US20230290677A1 (en) * | 2022-03-08 | 2023-09-14 | Tokyo Electron Limited | Method of forming a semiconductor device with air gaps for low capacitance interconnects |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3933764A (en) * | 1974-07-25 | 1976-01-20 | Union Carbide Corporation | Coagulative recovery of polysulfone resins from solutions thereof |
US5043112A (en) * | 1987-10-09 | 1991-08-27 | The Dow Chemical Company | Process for forming articles comprising poly(phenylene sulfide) (PPS) |
US5461003A (en) | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
JP2763023B2 (ja) | 1995-12-18 | 1998-06-11 | 日本電気株式会社 | 半導体装置の製造方法 |
EP0963603B1 (en) | 1997-01-21 | 2003-12-03 | Georgia Tech Research Corporation | Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections |
KR100307490B1 (ko) | 1999-08-31 | 2001-11-01 | 한신혁 | 반도체 장치의 기생 용량 감소 방법 |
TWI226103B (en) * | 2000-08-31 | 2005-01-01 | Georgia Tech Res Inst | Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same |
US6703324B2 (en) * | 2000-12-21 | 2004-03-09 | Intel Corporation | Mechanically reinforced highly porous low dielectric constant films |
US20020145201A1 (en) * | 2001-04-04 | 2002-10-10 | Armbrust Douglas Scott | Method and apparatus for making air gap insulation for semiconductor devices |
WO2003085719A2 (en) * | 2002-04-02 | 2003-10-16 | Dow Global Technologies Inc. | Process for making air gap containing semiconducting devices and resulting semiconducting device |
US6734094B2 (en) * | 2002-04-29 | 2004-05-11 | Intel Corporation | Method of forming an air gap within a structure by exposing an ultraviolet sensitive material to ultraviolet radiation |
JP3765289B2 (ja) | 2002-05-27 | 2006-04-12 | Jsr株式会社 | 多層配線間の空洞形成方法 |
DE10227663A1 (de) * | 2002-06-20 | 2004-01-15 | Infineon Technologies Ag | Verfahren zum Versiegeln poröser Materialien bei der Chipherstellung und Verbindungen hierfür |
JP2004063749A (ja) | 2002-07-29 | 2004-02-26 | Asahi Kasei Corp | エアアイソレーション構造を有する半導体装置 |
CN1168760C (zh) * | 2002-10-09 | 2004-09-29 | 武汉大学 | 一种三苯胺聚合物空穴材料的制备方法 |
US20040084774A1 (en) * | 2002-11-02 | 2004-05-06 | Bo Li | Gas layer formation materials |
JP4090867B2 (ja) * | 2002-12-24 | 2008-05-28 | 旭化成株式会社 | 半導体装置の製造法 |
WO2006098187A1 (ja) * | 2005-03-15 | 2006-09-21 | Matsushita Electric Industrial Co., Ltd. | フリップチップ実装方法およびバンプ形成方法 |
US20090085227A1 (en) * | 2005-05-17 | 2009-04-02 | Matsushita Electric Industrial Co., Ltd. | Flip-chip mounting body and flip-chip mounting method |
JP5219374B2 (ja) * | 2005-07-20 | 2013-06-26 | 株式会社Adeka | 含フッ素共重合体、アルカリ現像性樹脂組成物及びアルカリ現像性感光性樹脂組成物 |
US7176053B1 (en) * | 2005-08-16 | 2007-02-13 | Organicid, Inc. | Laser ablation method for fabricating high performance organic devices |
CN1331914C (zh) * | 2005-10-18 | 2007-08-15 | 武汉大学 | 一种聚三苯胺聚合物的合成方法 |
US20070215864A1 (en) * | 2006-03-17 | 2007-09-20 | Luebben Silvia D | Use of pi-conjugated organoboron polymers in thin-film organic polymer electronic devices |
US7438636B2 (en) * | 2006-12-21 | 2008-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
KR100843233B1 (ko) * | 2007-01-25 | 2008-07-03 | 삼성전자주식회사 | 배선층의 양측벽에 인접하여 에어갭을 갖는 반도체 소자 및그 제조방법 |
MY150705A (en) | 2007-04-10 | 2014-02-28 | Sumitomo Bakelite Co | Epoxy resin composition, prepreg, laminate board, multilayer printed wiring board, semiconductor device, insulating resin sheet, and process for manufacturing multilayer printed wiring board |
JP4959627B2 (ja) * | 2007-05-25 | 2012-06-27 | 住友ベークライト株式会社 | 樹脂組成物、樹脂スペーサ用フィルムおよび半導体装置 |
JP2009242440A (ja) * | 2008-03-28 | 2009-10-22 | Fujifilm Corp | 絶縁膜形成用組成物 |
JP5137674B2 (ja) * | 2008-04-26 | 2013-02-06 | 日本化薬株式会社 | Mems用感光性樹脂組成物及びその硬化物 |
EP2440597B1 (de) * | 2009-06-08 | 2013-10-16 | Basf Se | Segmentierte polyarylenether-blockcopolymere |
JP5552164B2 (ja) * | 2009-12-11 | 2014-07-16 | アイユーシーエフ−エイチワイユー(インダストリー−ユニバーシティ コーオペレーション ファウンデーション ハンヤン ユニバーシティ) | 透明性と高耐熱性とを有するポリアリーレンエーテル系重合体及びその製造方法 |
US8410562B2 (en) * | 2010-01-22 | 2013-04-02 | Carnegie Mellon University | Methods, apparatuses, and systems for micromechanical gas chemical sensing capacitor |
US8314005B2 (en) * | 2010-01-27 | 2012-11-20 | International Business Machines Corporation | Homogeneous porous low dielectric constant materials |
US8310040B2 (en) * | 2010-12-08 | 2012-11-13 | General Electric Company | Semiconductor device package having high breakdown voltage and low parasitic inductance and method of manufacturing thereof |
JP5636277B2 (ja) * | 2010-12-27 | 2014-12-03 | 富士フイルム株式会社 | 多孔質絶縁膜及びその製造方法 |
US8541301B2 (en) * | 2011-07-12 | 2013-09-24 | International Business Machines Corporation | Reduction of pore fill material dewetting |
CN103748516A (zh) * | 2011-08-10 | 2014-04-23 | 日立化成株式会社 | 感光性树脂组合物、感光性薄膜、永久抗蚀剂以及永久抗蚀剂的制造方法 |
US20130171819A1 (en) * | 2011-12-28 | 2013-07-04 | Toshiba America Electronic Components, Inc. | Methods for integration of metal/dielectric interconnects |
US9644070B2 (en) * | 2012-04-17 | 2017-05-09 | Merck Patent Gmbh | Cross-linkable and cross-linked polymers, process for the preparation thereof, and the use thereof |
JP6157160B2 (ja) * | 2013-03-15 | 2017-07-05 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 上層膜形成用組成物およびそれを用いたレジストパターン形成方法 |
JP2014188656A (ja) * | 2013-03-28 | 2014-10-06 | Tokyo Electron Ltd | 中空構造体の製造方法 |
WO2014207106A1 (de) * | 2013-06-28 | 2014-12-31 | Basf Se | Polyarylethersulfon-polymere (p) mit reduziertem lösungsmittelgehalt |
CN103396533A (zh) * | 2013-08-14 | 2013-11-20 | 黑龙江大学 | 含甲氧基三苯胺-芴共聚物、制备方法及其应用 |
EP3235854B1 (de) * | 2013-09-09 | 2023-06-28 | Basf Se | Polyarylenethersulfon-polymere für membrananwendungen |
US9371431B2 (en) * | 2014-07-02 | 2016-06-21 | International Business Machines Corporation | Poly(ether sulfone)s and poly(ether amide sulfone)s and methods of their preparation |
EP3176811A4 (en) * | 2014-07-31 | 2018-04-04 | AZ Electronic Materials Luxembourg S.à.r.l. | Sacrificial film composition, method for preparing same, semiconductor device having voids formed using said composition, and method for manufacturing semiconductor device using said composition |
US20160185984A1 (en) * | 2014-12-26 | 2016-06-30 | Dow Global Technologies Llc | Pore-fill compositions |
JP2016148777A (ja) * | 2015-02-12 | 2016-08-18 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 下層膜形成用組成物、およびそれを用いた下層膜の形成方法 |
-
2015
- 2015-05-26 KR KR1020167036775A patent/KR20170013939A/ko unknown
- 2015-05-26 CN CN201580028112.0A patent/CN106471057A/zh active Pending
- 2015-05-26 US US15/313,670 patent/US10435555B2/en not_active Expired - Fee Related
- 2015-05-26 JP JP2016523501A patent/JP6573876B2/ja not_active Expired - Fee Related
- 2015-05-26 SG SG11201609064XA patent/SG11201609064XA/en unknown
- 2015-05-26 WO PCT/JP2015/065030 patent/WO2015182581A1/ja active Application Filing
- 2015-05-26 EP EP15800354.1A patent/EP3150668A4/en not_active Withdrawn
- 2015-05-29 TW TW104117314A patent/TW201607986A/zh unknown
-
2016
- 2016-11-03 IL IL248722A patent/IL248722A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20170013939A (ko) | 2017-02-07 |
US20170210896A1 (en) | 2017-07-27 |
EP3150668A4 (en) | 2018-01-17 |
IL248722A0 (en) | 2017-01-31 |
US10435555B2 (en) | 2019-10-08 |
TW201607986A (zh) | 2016-03-01 |
JPWO2015182581A1 (ja) | 2017-04-20 |
WO2015182581A1 (ja) | 2015-12-03 |
CN106471057A (zh) | 2017-03-01 |
EP3150668A1 (en) | 2017-04-05 |
JP6573876B2 (ja) | 2019-09-11 |
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