SG11201606383YA - Techniques for forming non-planar resistive memory cells - Google Patents

Techniques for forming non-planar resistive memory cells

Info

Publication number
SG11201606383YA
SG11201606383YA SG11201606383YA SG11201606383YA SG11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA
Authority
SG
Singapore
Prior art keywords
techniques
memory cells
resistive memory
forming non
planar resistive
Prior art date
Application number
SG11201606383YA
Other languages
English (en)
Inventor
Prashant Majhi
Elijah V Karpov
Uday Shah
Niloy Mukherjee
Charles C Kuo
Ravi Pillarisetty
Brian S Doyle
Robert S Chau
Original Assignee
Intel Corporaton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporaton filed Critical Intel Corporaton
Publication of SG11201606383YA publication Critical patent/SG11201606383YA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/066—Patterning of the switching material by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
SG11201606383YA 2014-03-25 2014-03-25 Techniques for forming non-planar resistive memory cells SG11201606383YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/031735 WO2015147801A1 (en) 2014-03-25 2014-03-25 Techniques for forming non-planar resistive memory cells

Publications (1)

Publication Number Publication Date
SG11201606383YA true SG11201606383YA (en) 2016-09-29

Family

ID=54196122

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606383YA SG11201606383YA (en) 2014-03-25 2014-03-25 Techniques for forming non-planar resistive memory cells

Country Status (6)

Country Link
US (1) US10439134B2 (zh)
EP (1) EP3127155B1 (zh)
KR (1) KR102275565B1 (zh)
CN (1) CN106030801B (zh)
SG (1) SG11201606383YA (zh)
WO (1) WO2015147801A1 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10439134B2 (en) 2014-03-25 2019-10-08 Intel Corporation Techniques for forming non-planar resistive memory cells
CN107155371B (zh) 2014-12-18 2021-06-25 英特尔公司 包括局部丝状沟道的电阻性存储器单元、包括其的器件、以及制造其的方法
CN107004761B (zh) 2014-12-24 2021-09-14 英特尔公司 电阻式存储器单元及电阻式存储器单元的前体、制造其的方法和包括其的器件
FR3031416B1 (fr) 2015-01-06 2018-09-07 Commissariat Energie Atomique Cellule memoire non volatile resistive et son procede de fabrication
US9553265B1 (en) 2016-01-14 2017-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM device with data storage layer having increased height
WO2018009157A1 (en) * 2016-07-02 2018-01-11 Intel Corporation Resistive random access memory (rram) with multicomponent oxides
WO2018009155A1 (en) * 2016-07-02 2018-01-11 Intel Corporation Rram devices having a bottom oxygen exchange layer and their methods of fabrication
CN108155202B (zh) * 2016-12-02 2020-12-08 联华电子股份有限公司 半导体结构及其制造方法
WO2018182649A1 (en) * 2017-03-30 2018-10-04 Intel Corporation Layered oxygen barrier electrodes for resistive random access memory (rram) devices and their methods of fabrication
CN107221599B (zh) * 2017-05-25 2020-03-10 中国科学院微电子研究所 一种优化氧化物基的阻变存储器性能的方法
WO2019190502A1 (en) * 2018-03-28 2019-10-03 Intel Corporation Endurance and switching yield improvement in rram devices
CN108630810B (zh) * 2018-05-14 2022-07-19 中国科学院微电子研究所 1s1r存储器集成结构及其制备方法
US10903425B2 (en) * 2018-09-05 2021-01-26 International Business Machines Corporation Oxygen vacancy and filament-loss protection for resistive switching devices
US11088203B2 (en) 2019-07-29 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. 3D RRAM cell structure for reducing forming and set voltages
TWI697987B (zh) * 2019-08-12 2020-07-01 大陸商珠海興芯存儲科技有限公司 電阻式記憶體結構
US11196000B2 (en) 2019-11-01 2021-12-07 International Business Machines Corporation Low forming voltage non-volatile memory (NVM)
US11437568B2 (en) 2020-03-31 2022-09-06 Globalfoundries U.S. Inc. Memory device and methods of making such a memory device
US11081523B1 (en) 2020-05-14 2021-08-03 Globalfoundries Singapore Pte. Ltd. Memory devices and methods of forming memory devices
US11515475B2 (en) 2020-05-14 2022-11-29 Globalfoundries Singapore Pte. Ltd. Resistive random access memory devices
US11233195B2 (en) * 2020-06-05 2022-01-25 Globalfoundries Singapore Pte. Ltd. Memory devices and methods of forming memory devices
CN113889569A (zh) * 2020-07-02 2022-01-04 华邦电子股份有限公司 电阻式随机存取存储器及其制造方法
US11522131B2 (en) 2020-07-31 2022-12-06 Globalfoundries Singapore Pte Ltd Resistive memory device and methods of making such a resistive memory device
US11335852B2 (en) * 2020-09-21 2022-05-17 Globalfoundries Singapore Pte. Ltd. Resistive random access memory devices
TWI726830B (zh) * 2020-12-02 2021-05-01 華邦電子股份有限公司 電阻式記憶體
CN115715144A (zh) 2021-08-18 2023-02-24 联华电子股份有限公司 可变电阻式随机存取存储器元件及其制作方法
US20230397514A1 (en) * 2022-06-01 2023-12-07 International Business Machines Corporation Tunable resistive random access memory cell
US11955719B1 (en) * 2023-12-11 2024-04-09 United Arab Emirates University Antenna system comprising two oppositely directed antennas and methods for controlling transmission of radiation through a multi-layered antenna structure

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7531825B2 (en) * 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US7791925B2 (en) * 2008-10-31 2010-09-07 Seagate Technology, Llc Structures for resistive random access memory cells
EP2202816B1 (en) * 2008-12-24 2012-06-20 Imec Method for manufacturing a resistive switching memory device
JP2010212541A (ja) * 2009-03-12 2010-09-24 Panasonic Corp 不揮発性記憶装置およびその製造方法
JP4929332B2 (ja) * 2009-09-24 2012-05-09 株式会社東芝 電子部品の製造方法
JP5558090B2 (ja) 2009-12-16 2014-07-23 株式会社東芝 抵抗変化型メモリセルアレイ
KR20110076394A (ko) 2009-12-29 2011-07-06 삼성전자주식회사 상변화 메모리 장치
JP5450165B2 (ja) * 2010-02-26 2014-03-26 株式会社東芝 不揮発性半導体記憶装置、及び不揮発性半導体記憶装置の製造方法
CN102280465B (zh) * 2010-06-13 2013-05-29 北京大学 阻变随机访问存储器件及制造方法
JP4969707B2 (ja) * 2010-07-08 2012-07-04 パナソニック株式会社 不揮発性半導体記憶装置およびその製造方法
CN102339948A (zh) * 2010-07-16 2012-02-01 复旦大学 高一致性的电阻型存储器及其制备方法
KR20120134869A (ko) * 2011-06-03 2012-12-12 삼성전자주식회사 저항 변화 체를 갖는 비-휘발성 메모리 소자 및 그 제조방법
KR20130004784A (ko) 2011-07-04 2013-01-14 삼성전자주식회사 저항 변화 체를 갖는 비-휘발성 메모리 소자 및 그 제조방법
CN102306705A (zh) * 2011-09-16 2012-01-04 北京大学 一种大容量多值阻变存储器
KR20130091146A (ko) 2012-02-07 2013-08-16 삼성전자주식회사 비휘발성 메모리 셀 및 이를 포함하는 비휘발성 메모리 장치
JP6112106B2 (ja) 2012-03-16 2017-04-12 日本電気株式会社 抵抗変化素子、その抵抗変化素子を有する半導体装置、その半導体装置の製造方法およびその抵抗変化素子を用いたプログラミング方法
KR101328506B1 (ko) * 2012-06-28 2013-11-13 인텔렉추얼디스커버리 주식회사 하이브리드 스위칭 막을 갖는 수직형 저항 변화 메모리 소자 및 그 제조방법
KR101929941B1 (ko) * 2012-08-10 2018-12-18 삼성전자 주식회사 저항 변화 물질 소자 및 이를 적용한 디바이스
KR20140022205A (ko) * 2012-08-13 2014-02-24 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조 방법
US9349953B2 (en) * 2013-03-15 2016-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Resistance variable memory structure and method of forming the same
US10439134B2 (en) 2014-03-25 2019-10-08 Intel Corporation Techniques for forming non-planar resistive memory cells

Also Published As

Publication number Publication date
EP3127155A4 (en) 2017-11-22
WO2015147801A8 (en) 2016-09-01
KR102275565B1 (ko) 2021-07-12
EP3127155B1 (en) 2020-04-29
US10439134B2 (en) 2019-10-08
US20160359108A1 (en) 2016-12-08
EP3127155A1 (en) 2017-02-08
CN106030801B (zh) 2020-09-15
WO2015147801A1 (en) 2015-10-01
CN106030801A (zh) 2016-10-12
KR20160137522A (ko) 2016-11-30

Similar Documents

Publication Publication Date Title
IL274903A (en) cell
SG11201606383YA (en) Techniques for forming non-planar resistive memory cells
IL252590B (en) Improved storage unit
GB201420055D0 (en) Low density micropsheres
HK1223195A1 (zh) 反熔絲存儲器單元
IL266111A (en) Methods for inducing a t-cell response
HK1223075A1 (zh) 收納箱
GB2525904B (en) Memory unit
GB2527343B (en) Expandable storage structure
GB201412696D0 (en) Multi-probe microstructed arrays
GB201405374D0 (en) Determining a cell state of a resistive memory cell
PT3105873T (pt) Técnica para armazenar softbits
GB2525713B (en) Memory subsystem with wrapped-to-continuous read
SG11201607596QA (en) Crosslinking control in high impact polystyrene manufacturing
PL3149792T3 (pl) Ogniwo litowo-siarkowe
GB201413781D0 (en) Fuel cell
SG10201403640XA (en) Stem cells
GB201411625D0 (en) Fuel cell
IL248910B (en) Cell culture tray
GB201419897D0 (en) Host cell
GB201410934D0 (en) T cell
GB201411270D0 (en) An improved storage system
GB201401800D0 (en) Margins
AU2014057V (en) Shinju Rhododendron indicum