SG11201604727UA - Sputtering target of sintered sb-te-based alloy - Google Patents
Sputtering target of sintered sb-te-based alloyInfo
- Publication number
- SG11201604727UA SG11201604727UA SG11201604727UA SG11201604727UA SG11201604727UA SG 11201604727U A SG11201604727U A SG 11201604727UA SG 11201604727U A SG11201604727U A SG 11201604727UA SG 11201604727U A SG11201604727U A SG 11201604727UA SG 11201604727U A SG11201604727U A SG 11201604727UA
- Authority
- SG
- Singapore
- Prior art keywords
- sintered
- based alloy
- sputtering target
- sputtering
- alloy
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
- B22F2009/044—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by jet milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
- B22F2009/0848—Melting process before atomisation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014061966 | 2014-03-25 | ||
JP2014061965 | 2014-03-25 | ||
PCT/JP2015/054712 WO2015146394A1 (ja) | 2014-03-25 | 2015-02-20 | Sb-Te基合金焼結体スパッタリングターゲット |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201604727UA true SG11201604727UA (en) | 2016-07-28 |
Family
ID=54194929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201604727UA SG11201604727UA (en) | 2014-03-25 | 2015-02-20 | Sputtering target of sintered sb-te-based alloy |
Country Status (8)
Country | Link |
---|---|
US (1) | US10854435B2 (ja) |
EP (1) | EP3048184B1 (ja) |
JP (1) | JP6037421B2 (ja) |
KR (2) | KR20160078478A (ja) |
CN (1) | CN105917021B (ja) |
SG (1) | SG11201604727UA (ja) |
TW (1) | TWI626316B (ja) |
WO (1) | WO2015146394A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2673870C1 (ru) * | 2018-03-06 | 2018-11-30 | Федеральное государственное учреждение "Федеральный научно-исследовательский центр "Кристаллография и фотоника" Российской академии наук" | Магниторезистивный сплав на основе висмута |
TWI727322B (zh) * | 2018-08-09 | 2021-05-11 | 日商Jx金屬股份有限公司 | 濺鍍靶及磁性膜 |
CN109226768A (zh) * | 2018-10-09 | 2019-01-18 | 北京航空航天大学 | 一种过渡金属掺杂的碲化锑合金靶材的制备方法 |
JP6801768B2 (ja) * | 2018-11-20 | 2020-12-16 | 三菱マテリアル株式会社 | スパッタリングターゲット |
WO2020105676A1 (ja) * | 2018-11-20 | 2020-05-28 | 三菱マテリアル株式会社 | スパッタリングターゲット |
WO2020170492A1 (ja) * | 2019-02-20 | 2020-08-27 | 三菱マテリアル株式会社 | スパッタリングターゲット |
JP2020132996A (ja) * | 2019-02-20 | 2020-08-31 | 三菱マテリアル株式会社 | スパッタリングターゲット |
JP2020158846A (ja) * | 2019-03-27 | 2020-10-01 | 三菱マテリアル株式会社 | スパッタリングターゲット |
CN110396665A (zh) * | 2019-06-18 | 2019-11-01 | 有研新材料股份有限公司 | 一种硫系多元合金靶材及其制造方法 |
EP3789235A1 (en) | 2019-09-06 | 2021-03-10 | ODU GmbH & Co KG. | Plug-in connector with a locking mechanism |
WO2021205970A1 (ja) * | 2020-04-06 | 2021-10-14 | Jx金属株式会社 | ターゲット、焼結体及びこれらの製造方法 |
CN112719278A (zh) * | 2020-12-29 | 2021-04-30 | 先导薄膜材料(广东)有限公司 | 锗锑碲合金粉体的制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570937A (ja) | 1991-04-08 | 1993-03-23 | Mitsubishi Materials Corp | 光デイスク用スパツタリングタ−ゲツト及びその製造方法 |
JP2001098366A (ja) * | 1999-07-26 | 2001-04-10 | Sanyo Special Steel Co Ltd | Ge−Sb−Te系スパッタリングターゲット材の製造方法 |
JP4172015B2 (ja) | 2003-04-25 | 2008-10-29 | 三菱マテリアル株式会社 | 耐スパッタ割れ性に優れた相変化型メモリー膜形成用スパッタリングターゲット |
WO2005005683A1 (ja) | 2003-07-15 | 2005-01-20 | Nikko Materials Co., Ltd. | スパッタリングターゲット及び光記録媒体 |
JP2005117031A (ja) | 2003-09-17 | 2005-04-28 | Mitsubishi Materials Corp | 半導体不揮発メモリー用相変化膜およびこの相変化膜を形成するためのスパッタリングターゲット |
CN101068947A (zh) * | 2004-11-30 | 2007-11-07 | 日矿金属株式会社 | Sb-Te系合金烧结体溅射靶 |
KR100939473B1 (ko) * | 2004-12-24 | 2010-01-29 | 닛코 킨조쿠 가부시키가이샤 | Sb- Te 계 합금 소결체 타겟 및 그 제조 방법 |
KR100947197B1 (ko) * | 2005-01-18 | 2010-03-11 | 닛코 킨조쿠 가부시키가이샤 | 소결용 Sb-Te 계 합금 분말 및 이 분말을 소결하여얻은 소결체 스퍼터링 타겟 그리고 소결용 Sb-Te 계합금 분말의 제조 방법 |
EP2062994B1 (en) * | 2006-10-13 | 2016-07-27 | JX Nippon Mining & Metals Corporation | Sb-Te BASE ALLOY SINTER SPUTTERING TARGET |
US20100206724A1 (en) * | 2007-09-13 | 2010-08-19 | Nippon Mining And Metals Co., Ltd. | Method of Producing Sintered Compact, Sintered Compact, Sputtering Target Formed from the same, and Sputtering Target-Backing Plate Assembly |
JP5496078B2 (ja) * | 2008-02-26 | 2014-05-21 | Jx日鉱日石金属株式会社 | 焼結用Sb−Te系合金粉末及び同粉末の製造方法並びに焼結体ターゲット |
US20110017590A1 (en) * | 2008-03-17 | 2011-01-27 | Jx Nippon Mining & Metals Corporation | Sintered Compact Target and Method of Producing Sintered Compact |
EP2436799B1 (en) | 2009-05-27 | 2014-02-26 | JX Nippon Mining & Metals Corporation | Sintered target. |
JP5377142B2 (ja) | 2009-07-28 | 2013-12-25 | ソニー株式会社 | ターゲットの製造方法、メモリの製造方法 |
CN102712996B (zh) | 2010-01-07 | 2014-11-26 | 吉坤日矿日石金属株式会社 | 溅射靶、化合物半导体薄膜、具有化合物半导体薄膜的太阳能电池以及化合物半导体薄膜的制造方法 |
WO2011136120A1 (ja) * | 2010-04-26 | 2011-11-03 | Jx日鉱日石金属株式会社 | Sb-Te基合金焼結体スパッタリングターゲット |
-
2015
- 2015-02-20 CN CN201580004783.3A patent/CN105917021B/zh active Active
- 2015-02-20 US US15/102,305 patent/US10854435B2/en active Active
- 2015-02-20 JP JP2016510132A patent/JP6037421B2/ja active Active
- 2015-02-20 WO PCT/JP2015/054712 patent/WO2015146394A1/ja active Application Filing
- 2015-02-20 KR KR1020167014355A patent/KR20160078478A/ko active Search and Examination
- 2015-02-20 EP EP15769919.0A patent/EP3048184B1/en active Active
- 2015-02-20 KR KR1020187012857A patent/KR20180052775A/ko not_active Application Discontinuation
- 2015-02-20 SG SG11201604727UA patent/SG11201604727UA/en unknown
- 2015-03-04 TW TW104106804A patent/TWI626316B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI626316B (zh) | 2018-06-11 |
WO2015146394A1 (ja) | 2015-10-01 |
EP3048184A4 (en) | 2017-07-05 |
TW201546293A (zh) | 2015-12-16 |
US20160314945A1 (en) | 2016-10-27 |
CN105917021B (zh) | 2018-04-17 |
JPWO2015146394A1 (ja) | 2017-04-13 |
CN105917021A (zh) | 2016-08-31 |
US10854435B2 (en) | 2020-12-01 |
KR20180052775A (ko) | 2018-05-18 |
KR20160078478A (ko) | 2016-07-04 |
EP3048184B1 (en) | 2020-03-25 |
JP6037421B2 (ja) | 2016-12-07 |
EP3048184A1 (en) | 2016-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201604727UA (en) | Sputtering target of sintered sb-te-based alloy | |
EP3227038A4 (en) | Molten salt de-oxygenation of metal powders | |
IL247131A0 (en) | A method for optimizing the arrangement of a target and associated target | |
EP3160397A4 (en) | Improved metal alloys for medical devices | |
EP3212815A4 (en) | Metal alloys including copper | |
IL246811A0 (en) | A target for emitting power | |
TWI560298B (en) | Sputtering target and manufacturing method of the sputtering target | |
SG10201913475PA (en) | Sputtering target material | |
EP3106534A4 (en) | Alloy | |
SG11201700667VA (en) | Sputtering target | |
EP3170189A4 (en) | Multicaloric mnnisi alloys | |
GB201421949D0 (en) | Alloy | |
SG11201710836UA (en) | Sputtering target material | |
SG11201607790WA (en) | SPUTTERING TARGET COMPRISING Al-Te-Cu-Zr ALLOY, AND METHOD FOR PRODUCING SAME | |
PL3172354T3 (pl) | Target do rozpylania na bazie stopu srebra | |
PL3145660T3 (pl) | Proszek metalu | |
SG11201704051SA (en) | Target assembly | |
GB201408299D0 (en) | An alloy | |
GB201401906D0 (en) | Alloy | |
ZA201608686B (en) | Interseparation of metals | |
SG10201913474RA (en) | Sputtering target material | |
SG11201606737UA (en) | Sputtering target | |
SG11201604690QA (en) | Ag ALLOY FILM AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM | |
GB2542519B (en) | Low ductility alloy | |
EP3217044A4 (en) | Metal bellows |