SG11201506429SA - Epitaxial silicon wafer and method for manufacturing same - Google Patents

Epitaxial silicon wafer and method for manufacturing same

Info

Publication number
SG11201506429SA
SG11201506429SA SG11201506429SA SG11201506429SA SG11201506429SA SG 11201506429S A SG11201506429S A SG 11201506429SA SG 11201506429S A SG11201506429S A SG 11201506429SA SG 11201506429S A SG11201506429S A SG 11201506429SA SG 11201506429S A SG11201506429S A SG 11201506429SA
Authority
SG
Singapore
Prior art keywords
silicon wafer
epitaxial silicon
manufacturing same
manufacturing
epitaxial
Prior art date
Application number
SG11201506429SA
Other languages
English (en)
Inventor
Toshiaki Ono
Shigeru Umeno
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of SG11201506429SA publication Critical patent/SG11201506429SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11201506429SA 2013-04-03 2013-10-09 Epitaxial silicon wafer and method for manufacturing same SG11201506429SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013077411A JP6260100B2 (ja) 2013-04-03 2013-04-03 エピタキシャルシリコンウェーハの製造方法
PCT/JP2013/006021 WO2014162373A1 (ja) 2013-04-03 2013-10-09 エピタキシャルシリコンウェーハおよびその製造方法

Publications (1)

Publication Number Publication Date
SG11201506429SA true SG11201506429SA (en) 2015-11-27

Family

ID=51657708

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201506429SA SG11201506429SA (en) 2013-04-03 2013-10-09 Epitaxial silicon wafer and method for manufacturing same

Country Status (7)

Country Link
US (1) US9412622B2 (ja)
JP (1) JP6260100B2 (ja)
KR (1) KR101632936B1 (ja)
CN (1) CN105026624B (ja)
SG (1) SG11201506429SA (ja)
TW (1) TWI552202B (ja)
WO (1) WO2014162373A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6447351B2 (ja) * 2015-05-08 2019-01-09 株式会社Sumco シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ
JP6365887B2 (ja) * 2015-07-17 2018-08-01 信越半導体株式会社 シリコンウェーハのゲッタリング能力評価方法
JP6493105B2 (ja) * 2015-09-04 2019-04-03 株式会社Sumco エピタキシャルシリコンウェーハ
CN106917143A (zh) * 2015-12-25 2017-07-04 有研半导体材料有限公司 一种改善硅片内部氧沉淀及获得表面洁净区的方法
US10020203B1 (en) * 2017-01-06 2018-07-10 Sumco Corporation Epitaxial silicon wafer
CN108505114B (zh) * 2017-02-28 2021-03-05 胜高股份有限公司 外延生长晶圆及其制造方法
JP6711320B2 (ja) 2017-06-26 2020-06-17 株式会社Sumco シリコンウェーハ
US11932535B2 (en) * 2018-03-28 2024-03-19 Sumitomo Precision Products Co., Ltd. MEMS device manufacturing method, MEMS device, and shutter apparatus using the same
CN114737251A (zh) * 2022-04-08 2022-07-12 中环领先半导体材料有限公司 获取硅单晶最佳拉速以制备高bmd密度12英寸外延片的方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
US6336968B1 (en) * 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
JP4196602B2 (ja) * 2002-07-12 2008-12-17 信越半導体株式会社 エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
JPWO2004073057A1 (ja) * 2003-02-14 2006-06-01 株式会社Sumco シリコンウェーハの製造方法
KR100531552B1 (ko) * 2003-09-05 2005-11-28 주식회사 하이닉스반도체 실리콘 웨이퍼 및 그 제조방법
JP5023451B2 (ja) * 2004-08-25 2012-09-12 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法、シリコン単結晶育成方法
JP4797477B2 (ja) * 2005-04-08 2011-10-19 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
JP4742711B2 (ja) * 2005-04-08 2011-08-10 株式会社Ｓｕｍｃｏ シリコン単結晶育成方法
JP4806975B2 (ja) * 2005-06-20 2011-11-02 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
DE05806093T1 (de) * 2005-07-27 2008-08-21 Sumco Corp. Siliziumwafer und prozess zu seiner herstellung
JP4983161B2 (ja) 2005-10-24 2012-07-25 株式会社Ｓｕｍｃｏ シリコン半導体基板およびその製造方法
JP4760729B2 (ja) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
WO2008136500A1 (ja) * 2007-05-02 2008-11-13 Siltronic Ag シリコンウエハ及びその製造方法
JP5217245B2 (ja) * 2007-05-23 2013-06-19 株式会社Ｓｕｍｃｏ シリコン単結晶ウェーハ及びその製造方法
JP5568837B2 (ja) * 2008-02-29 2014-08-13 株式会社Ｓｕｍｃｏ シリコン基板の製造方法
JP5151628B2 (ja) * 2008-04-02 2013-02-27 信越半導体株式会社 シリコン単結晶ウエーハ、シリコン単結晶の製造方法および半導体デバイス
JP5487565B2 (ja) * 2008-06-19 2014-05-07 株式会社Ｓｕｍｃｏ エピタキシャルウェーハおよびその製造方法
JP5504667B2 (ja) 2009-03-25 2014-05-28 株式会社Ｓｕｍｃｏ シリコンウェーハおよびその製造方法
JP5613994B2 (ja) * 2009-04-14 2014-10-29 株式会社Sumco シリコンウェーハおよびその製造方法
JP5504664B2 (ja) 2009-03-25 2014-05-28 株式会社Ｓｕｍｃｏ シリコンエピタキシャルウェーハおよびその製造方法
WO2010109873A1 (ja) * 2009-03-25 2010-09-30 株式会社Sumco シリコンウェーハおよびその製造方法
JP2011054821A (ja) * 2009-09-03 2011-03-17 Sumco Corp エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
JP5906006B2 (ja) * 2010-05-21 2016-04-20 株式会社Sumco シリコンウェーハの製造方法
CN102168314B (zh) * 2011-03-23 2012-05-30 浙江大学 直拉硅片的内吸杂工艺
JP6278591B2 (ja) * 2012-11-13 2018-02-14 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法

Also Published As

Publication number Publication date
TW201440121A (zh) 2014-10-16
KR20150103209A (ko) 2015-09-09
TWI552202B (zh) 2016-10-01
US9412622B2 (en) 2016-08-09
CN105026624A (zh) 2015-11-04
WO2014162373A1 (ja) 2014-10-09
KR101632936B1 (ko) 2016-07-01
JP2014201468A (ja) 2014-10-27
CN105026624B (zh) 2017-08-15
US20160042974A1 (en) 2016-02-11
JP6260100B2 (ja) 2018-01-17

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