JP4742711B2 - シリコン単結晶育成方法 - Google Patents
シリコン単結晶育成方法 Download PDFInfo
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- JP4742711B2 JP4742711B2 JP2005203865A JP2005203865A JP4742711B2 JP 4742711 B2 JP4742711 B2 JP 4742711B2 JP 2005203865 A JP2005203865 A JP 2005203865A JP 2005203865 A JP2005203865 A JP 2005203865A JP 4742711 B2 JP4742711 B2 JP 4742711B2
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- single crystal
- hydrogen
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- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Description
LH=kPH (kは係数) (1)
すなわち、雰囲気中の水素分圧PHに比例するという関係が成り立つはずである。
PH=P0X/100 (2)
である。したがって、装置内の雰囲気ガス圧が異なる場合、水素分圧を一定、すなわち融液中の水素濃度を一定にするには、(2)式にしたがって混入する水素の体積比率を変えなければならない。
水素原子含有物質の気体として水素ガスを添加する場合には、市販の水素ガスボンベ、水素ガス貯蔵タンク、水素吸蔵合金を充填したタンク等から、専用の配管を通じて装置内の不活性雰囲気に供給することができる。
図6に模式的に示した断面構造の装置を用いて、育成実験をおこなった。この図において、熱遮蔽体7は、黒鉛で外殻を作り、内部に黒鉛フェルトを充填した構造であるが、るつぼに入る部分の外径が480mm、最下端における最小内径Sは270mm、半径方向の幅Wは105mmで、内面は下端部から始まる逆円錐台面とし、その垂直方向に対する傾きは21°であった。るつぼ1の内径は550mmのものを用い、熱遮蔽体7の下端の融液面からの高さHは、60mmとした。
実施例1にて用いた育成装置により、酸素濃度が1.24×1018atoms/cm3と、1.07×1018atoms/cm3との2種の単結晶について、表2に示す条件にて引き上げ速度および雰囲気中の水素分圧を変えて、無欠陥ウェーハを得る単結晶の育成をおこなった。
1b:るつぼ支持軸、 2:ヒーター
3:シリコン溶融液、 4:引き上げ軸
5:シードチャック、 6:単結晶
7:熱遮蔽体
Claims (3)
- チョクラルスキー法によるシリコン単結晶の育成において、育成装置内の不活性雰囲気中の水素分圧を40Pa以上、160Pa以下とし、単結晶直胴部を空孔優勢無欠陥領域として育成することを特徴とするシリコン単結晶育成方法。
- チョクラルスキー法によるシリコン単結晶の育成において、育成装置内の不活性雰囲気中の水素分圧を160Paを超え、400Pa以下とし、単結晶直胴部を格子間シリコン優勢無欠陥領域として育成することを特徴とするシリコン単結晶育成方法。
- チョクラルスキー法によるシリコン単結晶の育成において、単結晶の直胴部を育成する期間だけ育成装置内の不活性雰囲気中に水素原子含有物質の気体を添加することを特徴とする請求項1または2に記載のシリコン単結晶育成方法。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005203865A JP4742711B2 (ja) | 2005-04-08 | 2005-07-13 | シリコン単結晶育成方法 |
PCT/JP2005/016961 WO2006112053A1 (ja) | 2005-04-08 | 2005-09-14 | シリコン単結晶の育成方法、並びにシリコンウェーハおよびそれを用いたsoi基板 |
EP05783521.7A EP1892323B1 (en) | 2005-04-08 | 2005-09-14 | Silicon single crystal growing method |
CN2005800494091A CN101155950B (zh) | 2005-04-08 | 2005-09-14 | 硅单晶的培育方法、以及硅晶片和使用该硅晶片的soi衬底 |
KR1020077022928A KR100916055B1 (ko) | 2005-04-08 | 2005-09-14 | 실리콘 단결정의 육성 방법 및 실리콘 웨이퍼 및 그것을이용한 soi 기판 |
EP10002649.1A EP2194168B1 (en) | 2005-04-08 | 2005-09-14 | Silicon single crystal growing method. |
TW094134050A TW200636098A (en) | 2005-04-08 | 2005-09-29 | Method for growing silicon single crystal, and silicon wafer and SOI substrate using the same |
US11/393,892 US20060225639A1 (en) | 2005-04-08 | 2006-03-31 | Method for growing silicon single crystal, and silicon wafer |
US12/453,579 US20090261301A1 (en) | 2005-04-08 | 2009-05-15 | Method for growing silicon single crystal, and silicon wafer |
US12/453,578 US20090293799A1 (en) | 2005-04-08 | 2009-05-15 | Method for growing silicon single crystal, and silicon wafer |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005112649 | 2005-04-08 | ||
JP2005112649 | 2005-04-08 | ||
JP2005203865A JP4742711B2 (ja) | 2005-04-08 | 2005-07-13 | シリコン単結晶育成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006312575A JP2006312575A (ja) | 2006-11-16 |
JP4742711B2 true JP4742711B2 (ja) | 2011-08-10 |
Family
ID=37114801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005203865A Active JP4742711B2 (ja) | 2005-04-08 | 2005-07-13 | シリコン単結晶育成方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090293799A1 (ja) |
EP (2) | EP2194168B1 (ja) |
JP (1) | JP4742711B2 (ja) |
KR (1) | KR100916055B1 (ja) |
CN (1) | CN101155950B (ja) |
TW (1) | TW200636098A (ja) |
WO (1) | WO2006112053A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006347855A (ja) * | 2005-06-20 | 2006-12-28 | Sumco Corp | シリコン単結晶の育成方法およびシリコンウェーハの製造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7819972B2 (en) | 2005-06-20 | 2010-10-26 | Sumco Corporation | Method for growing silicon single crystal and method for manufacturing silicon wafer |
JP4806974B2 (ja) | 2005-06-20 | 2011-11-02 | 株式会社Sumco | シリコン単結晶育成方法 |
JP5262021B2 (ja) * | 2007-08-22 | 2013-08-14 | 株式会社Sumco | シリコンウェーハ及びその製造方法 |
US20080292523A1 (en) | 2007-05-23 | 2008-11-27 | Sumco Corporation | Silicon single crystal wafer and the production method |
JP5304649B2 (ja) * | 2007-08-21 | 2013-10-02 | 株式会社Sumco | Igbt用のシリコン単結晶ウェーハの製造方法 |
WO2009025339A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
WO2009025336A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
WO2009025341A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
JP5359874B2 (ja) * | 2007-08-21 | 2013-12-04 | 株式会社Sumco | Igbt用シリコン単結晶ウェーハの製造方法 |
FR2937797B1 (fr) * | 2008-10-28 | 2010-12-24 | S O I Tec Silicon On Insulator Tech | Procede de fabrication et de traitement d'une structure de type semi-conducteur sur isolant, permettant de deplacer des dislocations, et structure correspondante |
US9773265B2 (en) * | 2009-04-21 | 2017-09-26 | Perk Dynamics, LLC | Method and system for remote orders |
JP5428608B2 (ja) * | 2009-07-15 | 2014-02-26 | 株式会社Sumco | シリコン単結晶の育成方法 |
JP6260100B2 (ja) * | 2013-04-03 | 2018-01-17 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
CN112986294A (zh) * | 2021-02-02 | 2021-06-18 | 西安奕斯伟硅片技术有限公司 | 一种晶圆缺陷检测方法及装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002134517A (ja) * | 2000-10-27 | 2002-05-10 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法 |
JP2002187794A (ja) * | 2000-12-20 | 2002-07-05 | Sumitomo Metal Ind Ltd | シリコンウェーハおよびこれに用いるシリコン単結晶の製造方法 |
WO2004083496A1 (ja) * | 2003-02-25 | 2004-09-30 | Sumitomo Mitsubishi Silicon Corporation | シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法 |
Family Cites Families (12)
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JP3085146B2 (ja) | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
JP4147599B2 (ja) * | 1997-12-26 | 2008-09-10 | 株式会社Sumco | シリコン単結晶及びその製造方法 |
JP3955375B2 (ja) * | 1998-01-19 | 2007-08-08 | 信越半導体株式会社 | シリコン単結晶の製造方法およびシリコン単結晶ウエーハ |
US6284384B1 (en) * | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
JP4460671B2 (ja) * | 1999-03-26 | 2010-05-12 | シルトロニック・ジャパン株式会社 | シリコン半導体基板及びその製造方法 |
JP3573045B2 (ja) | 2000-02-08 | 2004-10-06 | 三菱住友シリコン株式会社 | 高品質シリコン単結晶の製造方法 |
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DE60135992D1 (de) * | 2000-06-30 | 2008-11-13 | Shinetsu Handotai Kk | Verfahren zur herstellung von silizium-einkristall-wafer |
US6663708B1 (en) * | 2000-09-22 | 2003-12-16 | Mitsubishi Materials Silicon Corporation | Silicon wafer, and manufacturing method and heat treatment method of the same |
US6682597B2 (en) * | 2000-10-23 | 2004-01-27 | Mitsubishi Materials Silicon Corporation | Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer |
JP5023451B2 (ja) * | 2004-08-25 | 2012-09-12 | 株式会社Sumco | シリコンウェーハの製造方法、シリコン単結晶育成方法 |
US7435294B2 (en) * | 2005-04-08 | 2008-10-14 | Sumco Corporation | Method for manufacturing silicon single crystal, and silicon wafer |
-
2005
- 2005-07-13 JP JP2005203865A patent/JP4742711B2/ja active Active
- 2005-09-14 CN CN2005800494091A patent/CN101155950B/zh active Active
- 2005-09-14 WO PCT/JP2005/016961 patent/WO2006112053A1/ja not_active Application Discontinuation
- 2005-09-14 EP EP10002649.1A patent/EP2194168B1/en active Active
- 2005-09-14 KR KR1020077022928A patent/KR100916055B1/ko active IP Right Grant
- 2005-09-14 EP EP05783521.7A patent/EP1892323B1/en active Active
- 2005-09-29 TW TW094134050A patent/TW200636098A/zh unknown
-
2009
- 2009-05-15 US US12/453,578 patent/US20090293799A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002134517A (ja) * | 2000-10-27 | 2002-05-10 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法 |
JP2002187794A (ja) * | 2000-12-20 | 2002-07-05 | Sumitomo Metal Ind Ltd | シリコンウェーハおよびこれに用いるシリコン単結晶の製造方法 |
WO2004083496A1 (ja) * | 2003-02-25 | 2004-09-30 | Sumitomo Mitsubishi Silicon Corporation | シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006347855A (ja) * | 2005-06-20 | 2006-12-28 | Sumco Corp | シリコン単結晶の育成方法およびシリコンウェーハの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2006112053A1 (ja) | 2006-10-26 |
KR20070113279A (ko) | 2007-11-28 |
JP2006312575A (ja) | 2006-11-16 |
EP1892323A1 (en) | 2008-02-27 |
EP1892323A4 (en) | 2009-07-01 |
KR100916055B1 (ko) | 2009-09-08 |
CN101155950A (zh) | 2008-04-02 |
TW200636098A (en) | 2006-10-16 |
CN101155950B (zh) | 2012-07-04 |
EP2194168B1 (en) | 2016-05-11 |
EP1892323B1 (en) | 2016-05-11 |
US20090293799A1 (en) | 2009-12-03 |
EP2194168A1 (en) | 2010-06-09 |
TWI320434B (ja) | 2010-02-11 |
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