SG11201501256YA - Cleaning method and cleaning system for semiconductor substrates - Google Patents
Cleaning method and cleaning system for semiconductor substratesInfo
- Publication number
- SG11201501256YA SG11201501256YA SG11201501256YA SG11201501256YA SG11201501256YA SG 11201501256Y A SG11201501256Y A SG 11201501256YA SG 11201501256Y A SG11201501256Y A SG 11201501256YA SG 11201501256Y A SG11201501256Y A SG 11201501256YA SG 11201501256Y A SG11201501256Y A SG 11201501256YA
- Authority
- SG
- Singapore
- Prior art keywords
- cleaning
- semiconductor substrates
- cleaning system
- cleaning method
- substrates
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/28—Per-compounds
- C25B1/29—Persulfates
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B15/00—Operating or servicing cells
- C25B15/08—Supplying or removing reactants or electrolytes; Regeneration of electrolytes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/44—Multi-step processes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012183307A JP5787098B2 (ja) | 2012-08-22 | 2012-08-22 | 半導体基板の洗浄方法および洗浄システム |
PCT/JP2013/072118 WO2014030616A1 (fr) | 2012-08-22 | 2013-08-19 | Procédé de nettoyage et système de nettoyage pour substrats de semi-conducteur |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201501256YA true SG11201501256YA (en) | 2015-05-28 |
Family
ID=50149925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201501256YA SG11201501256YA (en) | 2012-08-22 | 2013-08-19 | Cleaning method and cleaning system for semiconductor substrates |
Country Status (7)
Country | Link |
---|---|
US (1) | US10032623B2 (fr) |
JP (1) | JP5787098B2 (fr) |
KR (1) | KR102073663B1 (fr) |
CN (1) | CN104584198B (fr) |
SG (1) | SG11201501256YA (fr) |
TW (1) | TWI594316B (fr) |
WO (1) | WO2014030616A1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI630652B (zh) | 2014-03-17 | 2018-07-21 | 斯克林集團公司 | 基板處理裝置及使用基板處理裝置之基板處理方法 |
JP6385714B2 (ja) * | 2014-05-16 | 2018-09-05 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理装置の洗浄方法及び記憶媒体 |
JP6499414B2 (ja) * | 2014-09-30 | 2019-04-10 | 株式会社Screenホールディングス | 基板処理装置 |
JP6609919B2 (ja) * | 2014-12-19 | 2019-11-27 | 栗田工業株式会社 | 半導体基板の洗浄方法 |
JP5979328B2 (ja) * | 2015-01-14 | 2016-08-24 | 栗田工業株式会社 | 酸化剤濃度の測定方法および測定装置、並びに電子材料洗浄装置 |
JP6191720B1 (ja) * | 2016-03-25 | 2017-09-06 | 栗田工業株式会社 | 過硫酸溶液製造供給装置及び方法 |
JP6979852B2 (ja) * | 2017-10-26 | 2021-12-15 | 株式会社Screenホールディングス | 処理液供給装置、基板処理装置、および処理液供給方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6982006B1 (en) * | 1999-10-19 | 2006-01-03 | Boyers David G | Method and apparatus for treating a substrate with an ozone-solvent solution |
TW463309B (en) | 2000-08-10 | 2001-11-11 | Chartered Semiconductor Mfg | A titanium-cap/nickel (platinum) salicide process |
KR100795364B1 (ko) * | 2004-02-10 | 2008-01-17 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법 |
US7618891B2 (en) | 2006-05-01 | 2009-11-17 | International Business Machines Corporation | Method for forming self-aligned metal silicide contacts |
JP5309454B2 (ja) | 2006-10-11 | 2013-10-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR100786707B1 (ko) | 2006-12-21 | 2007-12-18 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 이의 제조 방법 |
JP5197986B2 (ja) | 2007-04-06 | 2013-05-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造装置 |
JP2009263689A (ja) * | 2008-04-22 | 2009-11-12 | Japan Organo Co Ltd | 過硫酸製造装置および洗浄システム |
JP4759079B2 (ja) | 2008-12-03 | 2011-08-31 | パナソニック株式会社 | 半導体装置の製造方法 |
JP4749471B2 (ja) * | 2009-01-13 | 2011-08-17 | パナソニック株式会社 | 半導体装置の製造方法 |
JP5660279B2 (ja) * | 2009-03-24 | 2015-01-28 | 栗田工業株式会社 | 機能性溶液供給システムおよび供給方法 |
JP2011166064A (ja) * | 2010-02-15 | 2011-08-25 | Panasonic Corp | 半導体装置の製造方法及びそれを用いた半導体装置の製造装置 |
JP2011192779A (ja) | 2010-03-15 | 2011-09-29 | Kurita Water Ind Ltd | 電子材料の洗浄方法および洗浄システム |
KR101255018B1 (ko) * | 2010-06-07 | 2013-04-16 | 쿠리타 고교 가부시키가이샤 | 세정 시스템 및 세정 방법 |
-
2012
- 2012-08-22 JP JP2012183307A patent/JP5787098B2/ja not_active Expired - Fee Related
-
2013
- 2013-08-19 SG SG11201501256YA patent/SG11201501256YA/en unknown
- 2013-08-19 US US14/423,270 patent/US10032623B2/en not_active Expired - Fee Related
- 2013-08-19 KR KR1020157003010A patent/KR102073663B1/ko active IP Right Grant
- 2013-08-19 WO PCT/JP2013/072118 patent/WO2014030616A1/fr active Application Filing
- 2013-08-19 CN CN201380043869.8A patent/CN104584198B/zh not_active Expired - Fee Related
- 2013-08-22 TW TW102129928A patent/TWI594316B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN104584198A (zh) | 2015-04-29 |
TWI594316B (zh) | 2017-08-01 |
TW201411716A (zh) | 2014-03-16 |
KR102073663B1 (ko) | 2020-02-05 |
JP5787098B2 (ja) | 2015-09-30 |
JP2014041915A (ja) | 2014-03-06 |
US10032623B2 (en) | 2018-07-24 |
KR20150043304A (ko) | 2015-04-22 |
US20150262811A1 (en) | 2015-09-17 |
WO2014030616A1 (fr) | 2014-02-27 |
CN104584198B (zh) | 2016-10-12 |
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