SG11201508702TA - Cleaning method for exposed copper substrate and cleaning system - Google Patents

Cleaning method for exposed copper substrate and cleaning system

Info

Publication number
SG11201508702TA
SG11201508702TA SG11201508702TA SG11201508702TA SG11201508702TA SG 11201508702T A SG11201508702T A SG 11201508702TA SG 11201508702T A SG11201508702T A SG 11201508702TA SG 11201508702T A SG11201508702T A SG 11201508702TA SG 11201508702T A SG11201508702T A SG 11201508702TA
Authority
SG
Singapore
Prior art keywords
cleaning
copper substrate
exposed copper
cleaning system
cleaning method
Prior art date
Application number
SG11201508702TA
Inventor
Daisaku Yano
Masami Murayama
Yukinari Yamashita
Koji Yamanaka
Original Assignee
Organo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Organo Corp filed Critical Organo Corp
Publication of SG11201508702TA publication Critical patent/SG11201508702TA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
    • B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
    • B01J31/06—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing polymers
    • B01J31/08—Ion-exchange resins
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/30—Treatment of water, waste water, or sewage by irradiation
    • C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F9/00—Multistage treatment of water, waste water or sewage
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/44—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/68—Treatment of water, waste water, or sewage by addition of specified substances, e.g. trace elements, for ameliorating potable water
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/02—Non-contaminated water, e.g. for industrial water supply
    • C02F2103/04—Non-contaminated water, e.g. for industrial water supply for obtaining ultra-pure water

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Environmental & Geological Engineering (AREA)
  • Hydrology & Water Resources (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Catalysts (AREA)
  • Medicinal Chemistry (AREA)
  • Removal Of Specific Substances (AREA)
  • Physical Water Treatments (AREA)
SG11201508702TA 2013-04-30 2014-04-17 Cleaning method for exposed copper substrate and cleaning system SG11201508702TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013095579 2013-04-30
PCT/JP2014/060902 WO2014178289A1 (en) 2013-04-30 2014-04-17 Cleaning method for exposed copper substrate and cleaning system

Publications (1)

Publication Number Publication Date
SG11201508702TA true SG11201508702TA (en) 2015-11-27

Family

ID=51843423

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201508702TA SG11201508702TA (en) 2013-04-30 2014-04-17 Cleaning method for exposed copper substrate and cleaning system

Country Status (7)

Country Link
US (2) US10434546B2 (en)
JP (1) JP6117348B2 (en)
KR (1) KR101824785B1 (en)
CN (1) CN105340067B (en)
SG (1) SG11201508702TA (en)
TW (1) TWI583631B (en)
WO (1) WO2014178289A1 (en)

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* Cited by examiner, † Cited by third party
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US9740094B2 (en) 2015-08-21 2017-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Damage prevention on EUV mask
JP6716992B2 (en) * 2016-03-25 2020-07-01 栗田工業株式会社 Wet cleaning device and wet cleaning method
JP7213006B2 (en) * 2017-02-09 2023-01-26 栗田工業株式会社 Conductive aqueous solution manufacturing apparatus and conductive aqueous solution manufacturing method
JP6299912B1 (en) 2017-03-30 2018-03-28 栗田工業株式会社 Apparatus for producing a diluted chemical solution capable of controlling pH and redox potential
JP6471816B2 (en) * 2018-02-14 2019-02-20 栗田工業株式会社 pH / redox potential adjustment water production equipment
JP7125850B2 (en) * 2018-03-29 2022-08-25 オルガノ株式会社 Gas-dissolved water supply system and gas-dissolved water supply method
KR102066790B1 (en) 2018-05-18 2020-01-15 주식회사 웨코 Apparatus and method for manufacturing celaning liquid with nano buble
CN109809489A (en) * 2019-03-22 2019-05-28 华南理工大学 A kind of method of rapid synthesis high quality tungstic acid solution
JP2022154537A (en) * 2021-03-30 2022-10-13 オルガノ株式会社 Ultrapure water production system

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US5068040A (en) * 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
US5220517A (en) * 1990-08-31 1993-06-15 Sci Systems, Inc. Process gas distribution system and method with supervisory control
JPH04206724A (en) 1990-11-30 1992-07-28 Hitachi Cable Ltd Cleaning method of semiconductor wafer
JPH10324502A (en) * 1997-05-21 1998-12-08 Dainippon Ink & Chem Inc Device and method for adding carbon dioxide to ultrapure water
DE19825063A1 (en) * 1998-06-04 1999-12-09 Astex Sorbios Gmbh Method for suppressing the decay rate of ozone in ultra pure water
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
JP2003136077A (en) * 2001-10-31 2003-05-13 Nec Corp Apparatus for making washing water or dipping water used in production of semiconductor
US6764552B1 (en) * 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
JP4039662B2 (en) 2002-08-13 2008-01-30 株式会社Ｓｕｍｃｏ Method for cleaning semiconductor substrate or element
US7718012B2 (en) * 2004-12-30 2010-05-18 Infineon Technologies Ag Method of degasification in semiconductor cleaning
CN1881538A (en) 2005-06-13 2006-12-20 上海宏力半导体制造有限公司 Cleaning method for improving silicon sheet surface metal ion pollution
JP5124946B2 (en) * 2006-01-12 2013-01-23 栗田工業株式会社 Removal method of hydrogen peroxide in ultrapure water in ultrapure water production equipment
CN101379597B (en) 2006-02-01 2012-07-18 国立大学法人东北大学 Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface
US20070240740A1 (en) * 2006-04-13 2007-10-18 Mcdermott Wayne T Cleaning of contaminated articles by aqueous supercritical oxidation
KR20100113633A (en) * 2008-03-31 2010-10-21 쿠리타 고교 가부시키가이샤 Method for producing pure water and pure water production system
JP5390808B2 (en) * 2008-08-27 2014-01-15 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP4920019B2 (en) 2008-09-22 2012-04-18 オルガノ株式会社 Hydrogen peroxide reduction method, hydrogen peroxide reduction device, ultrapure water production device, and cleaning method
JP5329463B2 (en) * 2009-03-18 2013-10-30 オルガノ株式会社 Production method for hydrogen peroxide decomposition treated water, production apparatus for hydrogen peroxide decomposition treated water, treatment tank, production method for ultra pure water, production apparatus for ultra pure water, production method for hydrogen dissolved water, production apparatus for hydrogen dissolved water , Ozone-dissolved water manufacturing method, ozone-dissolved water manufacturing apparatus, and electronic component cleaning method
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KR20140018746A (en) * 2012-08-03 2014-02-13 삼성전자주식회사 Substrate treating method and apparatus thereof
US8480903B1 (en) * 2012-11-16 2013-07-09 Jesse Clinton Taylor, III Systems and methods for in-situ contaminant remediation
TWI546878B (en) * 2012-12-28 2016-08-21 斯克林集團公司 Substrate processing apparatus and substrate processing method

Also Published As

Publication number Publication date
KR101824785B1 (en) 2018-02-01
JPWO2014178289A1 (en) 2017-02-23
TW201509821A (en) 2015-03-16
US10434546B2 (en) 2019-10-08
WO2014178289A1 (en) 2014-11-06
CN105340067B (en) 2018-07-06
TWI583631B (en) 2017-05-21
JP6117348B2 (en) 2017-04-19
US20160059273A1 (en) 2016-03-03
US20190381539A1 (en) 2019-12-19
CN105340067A (en) 2016-02-17
KR20150142036A (en) 2015-12-21
US11491517B2 (en) 2022-11-08

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