DE19825063A1 - Method for suppressing the decay rate of ozone in ultra pure water - Google Patents

Method for suppressing the decay rate of ozone in ultra pure water

Info

Publication number
DE19825063A1
DE19825063A1 DE19825063A DE19825063A DE19825063A1 DE 19825063 A1 DE19825063 A1 DE 19825063A1 DE 19825063 A DE19825063 A DE 19825063A DE 19825063 A DE19825063 A DE 19825063A DE 19825063 A1 DE19825063 A1 DE 19825063A1
Authority
DE
Germany
Prior art keywords
ozone
water
suppressing
decay rate
pure water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19825063A
Other languages
German (de)
Inventor
Christiane Gottschalk
Ulrich Brammer
Juergen Schweckendiek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASTEX SORBIOS GmbH
Original Assignee
ASTEX SORBIOS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASTEX SORBIOS GmbH filed Critical ASTEX SORBIOS GmbH
Priority to DE19825063A priority Critical patent/DE19825063A1/en
Priority to AU45076/99A priority patent/AU4507699A/en
Priority to PCT/EP1999/003893 priority patent/WO1999062649A1/en
Priority to EP99927887A priority patent/EP1084002B1/en
Priority to US09/701,854 priority patent/US6786976B1/en
Priority to DE59910459T priority patent/DE59910459D1/en
Priority to AT99927887T priority patent/ATE275445T1/en
Publication of DE19825063A1 publication Critical patent/DE19825063A1/en
Priority to US10/892,539 priority patent/US7067017B2/en
Priority to US11/433,092 priority patent/US20070034230A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/72—Treatment of water, waste water, or sewage by oxidation
    • C02F1/78—Treatment of water, waste water, or sewage by oxidation with ozone
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/72—Treatment of water, waste water, or sewage by oxidation
    • C02F1/727—Treatment of water, waste water, or sewage by oxidation using pure oxygen or oxygen rich gas
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/23—O3
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2301/00—General aspects of water treatment
    • C02F2301/06—Pressure conditions
    • C02F2301/066—Overpressure, high pressure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatment Of Water By Oxidation Or Reduction (AREA)
  • Detergent Compositions (AREA)

Abstract

The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Description

Die Erfindung betrifft ein Verfahren zur zumindest zeitweiligen Unterdrückung der Zerfallsgeschwindig­ keit von Ozon in ultrareinem Wasser.The invention relates to a method for at least temporary suppression of decay rate ozone in ultrapure water.

In den vergangenen Jahren wird Ozon mehr und mehr als reaktives Gas zur Reinigung und Oxidation in Naßpro­ zessen in der Halbleiterindustrie verwendet. Um sehr gute Reinigungswirkungen mit minimalem Chemikalien­ verbrauch zu ermöglichen, wird ozonisiertes Reinst­ wasser angewendet. Infolge der geringen Löslichkeit von Ozon in Wasser sind besondere Maßnahmen erforder­ lich, um Ozon zu lösen. Ein weiteres Problem stellt die erhöhte Zerfallsgeschwindigkeit von Ozon in hochreinem, deionisiertem Wasser dar.In recent years, ozone has become more and more than reactive gas for cleaning and oxidation in wet pro used in the semiconductor industry. By a lot good cleaning effects with minimal chemicals Allowing consumption becomes ozonized purity water applied. Due to the low solubility Special measures are required for ozone in water to dissolve ozone. Another problem is posed the increased decay rate of ozone in high-purity, deionized water.

Claims (3)

1. Verfahren zur Unterdrückung der Zerfallsge­ schwindigkeit von Ozon in ultrareinem Wasser, dadurch gekennzeichnet, daß während der Kontaktierung des ultrareinen Wassers oder davor gasförmige oder flüssige Chemikalien zugesetzt werden, wie z. B. CO2, NOx, HCl, andere Mineralsäuren, die den radikalischen Zerfallsmechanismus von Ozon unterdrücken.1. A method for suppressing the speed of disintegration of ozone in ultrapure water, characterized in that gaseous or liquid chemicals, such as, for example, are added during the contacting of the ultrapure water or before it. B. CO2, NOx, HCl, other mineral acids that suppress the radical decay mechanism of ozone. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die entsprechende Chemikalie in einer Gasentladung erzeugt wird, bzw. in der Ozonisierung als Coprodukt gebildet oder der Ozonisierung zugesetzt wird.2. The method according to claim 1, characterized in that the corresponding Chemical is generated in a gas discharge or formed as a co-product in ozonization or is added to ozonization. 3. Verfahren, dadurch gekennzeichnet, daß die oben beschriebene Wirkung der Chemikalien durch Ent­ fernung derselben bzw. Neutralisierung wieder aufgehoben werden kann.3. The method, characterized in that the above described effect of the chemicals by Ent removal of the same or neutralization again can be canceled.
DE19825063A 1998-06-04 1998-06-04 Method for suppressing the decay rate of ozone in ultra pure water Withdrawn DE19825063A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE19825063A DE19825063A1 (en) 1998-06-04 1998-06-04 Method for suppressing the decay rate of ozone in ultra pure water
AU45076/99A AU4507699A (en) 1998-06-04 1999-06-04 Method and system for cleaning semiconductor elements
PCT/EP1999/003893 WO1999062649A1 (en) 1998-06-04 1999-06-04 Method and system for cleaning semiconductor elements
EP99927887A EP1084002B1 (en) 1998-06-04 1999-06-04 Method and system for cleaning semiconductor elements
US09/701,854 US6786976B1 (en) 1998-06-04 1999-06-04 Method and system for cleaning semiconductor elements
DE59910459T DE59910459D1 (en) 1998-06-04 1999-06-04 METHOD AND SYSTEM FOR CLEANING SEMICONDUCTOR ELEMENTS
AT99927887T ATE275445T1 (en) 1998-06-04 1999-06-04 METHOD AND SYSTEM FOR CLEANING SEMICONDUCTOR ELEMENTS
US10/892,539 US7067017B2 (en) 1998-06-04 2004-07-15 Method and system for cleaning semiconductor elements
US11/433,092 US20070034230A1 (en) 1998-06-04 2006-05-12 Method and system for producing ozonized deionized water

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19825063A DE19825063A1 (en) 1998-06-04 1998-06-04 Method for suppressing the decay rate of ozone in ultra pure water

Publications (1)

Publication Number Publication Date
DE19825063A1 true DE19825063A1 (en) 1999-12-09

Family

ID=7869946

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19825063A Withdrawn DE19825063A1 (en) 1998-06-04 1998-06-04 Method for suppressing the decay rate of ozone in ultra pure water
DE59910459T Expired - Lifetime DE59910459D1 (en) 1998-06-04 1999-06-04 METHOD AND SYSTEM FOR CLEANING SEMICONDUCTOR ELEMENTS

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59910459T Expired - Lifetime DE59910459D1 (en) 1998-06-04 1999-06-04 METHOD AND SYSTEM FOR CLEANING SEMICONDUCTOR ELEMENTS

Country Status (6)

Country Link
US (3) US6786976B1 (en)
EP (1) EP1084002B1 (en)
AT (1) ATE275445T1 (en)
AU (1) AU4507699A (en)
DE (2) DE19825063A1 (en)
WO (1) WO1999062649A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7264680B2 (en) * 1997-05-09 2007-09-04 Semitool, Inc. Process and apparatus for treating a workpiece using ozone
DE19825063A1 (en) * 1998-06-04 1999-12-09 Astex Sorbios Gmbh Method for suppressing the decay rate of ozone in ultra pure water
US6805791B2 (en) * 2000-09-01 2004-10-19 Applied Science And Technology, Inc. Ozonated water flow and concentration control apparatus
KR100513397B1 (en) * 2001-01-12 2005-09-09 삼성전자주식회사 semiconductor wafer washing system and washing-solution supply method thereof
JP3953361B2 (en) * 2002-05-08 2007-08-08 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
JP4039662B2 (en) * 2002-08-13 2008-01-30 株式会社Ｓｕｍｃｏ Method for cleaning semiconductor substrate or element
EP3421055B1 (en) * 2011-08-25 2020-02-05 Tersano Inc. Treatment of water to extend half-life of ozone
US9056262B2 (en) 2012-11-08 2015-06-16 Mks Instruments, Inc. Pressure-less ozonated Di-water (DIO3) recirculation reclaim system
WO2014178289A1 (en) 2013-04-30 2014-11-06 オルガノ株式会社 Cleaning method for exposed copper substrate and cleaning system
TWI638383B (en) * 2015-07-15 2018-10-11 美商原備有限公司 Method for processing the surface of a workpiece
US10858271B2 (en) 2018-03-28 2020-12-08 L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Claude Methods for producing high-concentration of dissolved ozone in liquid media
US11084744B2 (en) 2018-03-28 2021-08-10 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method for mixing gas-free liquid oxidant with process liquid
US11434153B2 (en) 2018-03-28 2022-09-06 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude Separation of ozone oxidation in liquid media into three unit operations for process optimization

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5370846A (en) * 1990-10-26 1994-12-06 Sumitomo Precision Products Co., Ltd. Apparatus and method for generating high concentration ozone
US5261966A (en) * 1991-01-28 1993-11-16 Kabushiki Kaisha Toshiba Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns
DE69305411T3 (en) * 1992-04-28 2003-11-20 Mitsubishi Electric Corp System and method for eliminating microorganisms
US5464480A (en) * 1993-07-16 1995-11-07 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid
US6080531A (en) * 1998-03-30 2000-06-27 Fsi International, Inc. Organic removal process
DE19825063A1 (en) * 1998-06-04 1999-12-09 Astex Sorbios Gmbh Method for suppressing the decay rate of ozone in ultra pure water

Also Published As

Publication number Publication date
DE59910459D1 (en) 2004-10-14
US20050056301A1 (en) 2005-03-17
ATE275445T1 (en) 2004-09-15
US7067017B2 (en) 2006-06-27
US6786976B1 (en) 2004-09-07
AU4507699A (en) 1999-12-20
EP1084002A1 (en) 2001-03-21
US20070034230A1 (en) 2007-02-15
WO1999062649A1 (en) 1999-12-09
EP1084002B1 (en) 2004-09-08

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination