SG11201407048RA - Negative-working thick film photoresist - Google Patents
Negative-working thick film photoresistInfo
- Publication number
- SG11201407048RA SG11201407048RA SG11201407048RA SG11201407048RA SG11201407048RA SG 11201407048R A SG11201407048R A SG 11201407048RA SG 11201407048R A SG11201407048R A SG 11201407048RA SG 11201407048R A SG11201407048R A SG 11201407048RA SG 11201407048R A SG11201407048R A SG 11201407048RA
- Authority
- SG
- Singapore
- Prior art keywords
- negative
- thick film
- film photoresist
- working thick
- working
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1805—C5-(meth)acrylate, e.g. pentyl (meth)acrylate
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/524,811 US8906594B2 (en) | 2012-06-15 | 2012-06-15 | Negative-working thick film photoresist |
PCT/EP2013/059772 WO2013185990A1 (en) | 2012-06-15 | 2013-05-13 | Negative-working thick film photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201407048RA true SG11201407048RA (en) | 2014-11-27 |
Family
ID=48446308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201407048RA SG11201407048RA (en) | 2012-06-15 | 2013-05-13 | Negative-working thick film photoresist |
Country Status (8)
Country | Link |
---|---|
US (1) | US8906594B2 (zh) |
EP (1) | EP2861638B1 (zh) |
JP (1) | JP6579952B2 (zh) |
KR (2) | KR20150032671A (zh) |
CN (1) | CN104364279B (zh) |
SG (1) | SG11201407048RA (zh) |
TW (1) | TWI585532B (zh) |
WO (1) | WO2013185990A1 (zh) |
Families Citing this family (15)
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US9012126B2 (en) | 2012-06-15 | 2015-04-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive photosensitive material |
JP6175226B2 (ja) * | 2012-09-28 | 2017-08-02 | 富士フイルム株式会社 | パターン形成方法、半導体製造用の感活性光線性又は感放射線性樹脂組成物、及び電子デバイスの製造方法 |
JP6270024B2 (ja) * | 2013-10-04 | 2018-01-31 | 日立化成株式会社 | 感光性接着剤組成物、それを用いる半導体装置の製造方法、及び半導体装置 |
CN104861109B (zh) * | 2014-02-24 | 2017-06-13 | 中国科学院理化技术研究所 | 兼具水溶性和油溶性的成膜树脂及其制备方法和应用 |
KR20170027005A (ko) * | 2015-09-01 | 2017-03-09 | 동우 화인켐 주식회사 | 감광성 수지 조성물 및 이로부터 형성된 광경화 패턴 |
US20170176856A1 (en) * | 2015-12-21 | 2017-06-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working photoresist compositions for laser ablation and use thereof |
TWI731961B (zh) | 2016-04-19 | 2021-07-01 | 德商馬克專利公司 | 正向感光材料及形成正向凸紋影像之方法 |
JP2017215569A (ja) * | 2016-05-26 | 2017-12-07 | 太陽インキ製造株式会社 | 感光性樹脂組成物、ドライフィルム、およびプリント配線板の製造方法 |
SG11202007193SA (en) * | 2018-03-23 | 2020-08-28 | Merck Patent Gmbh | Negative-working ultra thick film photoresist |
JP2019177685A (ja) * | 2018-03-30 | 2019-10-17 | 大日本印刷株式会社 | 木質系部材 |
CN109270790B (zh) * | 2018-08-07 | 2022-09-20 | 珠海雅天科技有限公司 | 一种新型高宽比大于三的半导体光刻用抗刻蚀树脂组合物及其应用 |
US11506981B2 (en) * | 2019-05-31 | 2022-11-22 | Rohm And Haas Electronic Materials Llc | Photoresist pattern trimming compositions and pattern formation methods |
KR20220101662A (ko) | 2019-11-14 | 2022-07-19 | 메르크 파텐트 게엠베하 | 알칼리-가용성 아크릴 수지를 포함하는 dnq-타입 포토레지스트 조성물 |
CN112731764A (zh) * | 2020-12-29 | 2021-04-30 | 苏州理硕科技有限公司 | 负性光刻胶组合物和形成光刻胶图案的方法 |
WO2023088869A2 (en) | 2021-11-17 | 2023-05-25 | Merck Patent Gmbh | Compositions and methods for improving metal structure fabrication by wet chemical etch |
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CN102050908A (zh) * | 2010-11-22 | 2011-05-11 | 昆山西迪光电材料有限公司 | 化学增幅型含硅i-线紫外负性光刻胶及其成膜树脂 |
JP5749631B2 (ja) | 2010-12-07 | 2015-07-15 | 東京応化工業株式会社 | 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法 |
JP5793781B2 (ja) * | 2011-02-04 | 2015-10-14 | 東洋インキScホールディングス株式会社 | カラーフィルタ用着色組成物、およびカラーフィルタ |
US9012126B2 (en) | 2012-06-15 | 2015-04-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive photosensitive material |
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2012
- 2012-06-15 US US13/524,811 patent/US8906594B2/en active Active
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2013
- 2013-05-13 JP JP2015516526A patent/JP6579952B2/ja active Active
- 2013-05-13 KR KR20147035916A patent/KR20150032671A/ko active Application Filing
- 2013-05-13 SG SG11201407048RA patent/SG11201407048RA/en unknown
- 2013-05-13 CN CN201380029761.3A patent/CN104364279B/zh active Active
- 2013-05-13 KR KR1020197007124A patent/KR102226227B1/ko active IP Right Grant
- 2013-05-13 WO PCT/EP2013/059772 patent/WO2013185990A1/en active Application Filing
- 2013-05-13 EP EP13723081.9A patent/EP2861638B1/en active Active
- 2013-06-14 TW TW102121225A patent/TWI585532B/zh active
Also Published As
Publication number | Publication date |
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EP2861638B1 (en) | 2018-11-14 |
TW201407286A (zh) | 2014-02-16 |
CN104364279B (zh) | 2017-05-10 |
TWI585532B (zh) | 2017-06-01 |
JP6579952B2 (ja) | 2019-09-25 |
EP2861638A1 (en) | 2015-04-22 |
CN104364279A (zh) | 2015-02-18 |
WO2013185990A1 (en) | 2013-12-19 |
KR102226227B1 (ko) | 2021-03-10 |
KR20190029773A (ko) | 2019-03-20 |
US8906594B2 (en) | 2014-12-09 |
JP2015521752A (ja) | 2015-07-30 |
US20130337381A1 (en) | 2013-12-19 |
KR20150032671A (ko) | 2015-03-27 |
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