SG11201401184SA - Silicon carbide epitaxy - Google Patents
Silicon carbide epitaxyInfo
- Publication number
- SG11201401184SA SG11201401184SA SG11201401184SA SG11201401184SA SG11201401184SA SG 11201401184S A SG11201401184S A SG 11201401184SA SG 11201401184S A SG11201401184S A SG 11201401184SA SG 11201401184S A SG11201401184S A SG 11201401184SA SG 11201401184S A SG11201401184S A SG 11201401184SA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon carbide
- carbide epitaxy
- epitaxy
- silicon
- carbide
- Prior art date
Links
- 238000000407 epitaxy Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1118502.2A GB2495949B (en) | 2011-10-26 | 2011-10-26 | Silicon carbide epitaxy |
PCT/GB2012/052627 WO2013061047A2 (en) | 2011-10-26 | 2012-10-23 | Silicon carbide epitaxy |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201401184SA true SG11201401184SA (en) | 2014-07-30 |
Family
ID=45373456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201401184SA SG11201401184SA (en) | 2011-10-26 | 2012-10-23 | Silicon carbide epitaxy |
Country Status (8)
Country | Link |
---|---|
US (2) | US9520285B2 (ja) |
EP (2) | EP2771903A2 (ja) |
JP (1) | JP2015503215A (ja) |
KR (1) | KR20140082839A (ja) |
CN (2) | CN107452784A (ja) |
GB (1) | GB2495949B (ja) |
SG (1) | SG11201401184SA (ja) |
WO (1) | WO2013061047A2 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9013027B2 (en) | 2013-07-25 | 2015-04-21 | Infineon Technologies Ag | Semiconductor device, a semiconductor wafer structure, and a method for forming a semiconductor wafer structure |
US20150059640A1 (en) * | 2013-08-27 | 2015-03-05 | Raytheon Company | Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windows |
WO2015040369A1 (en) * | 2013-09-23 | 2015-03-26 | Anvil Semiconductors Limited | 3C-SiC TRANSISTOR |
JP6248532B2 (ja) * | 2013-10-17 | 2017-12-20 | セイコーエプソン株式会社 | 3C−SiCエピタキシャル層の製造方法、3C−SiCエピタキシャル基板および半導体装置 |
GB2534357B (en) * | 2015-01-14 | 2020-02-19 | Anvil Semiconductors Ltd | Wafer bow reduction |
JP6450282B2 (ja) * | 2015-08-19 | 2019-01-09 | エア・ウォーター株式会社 | 化合物半導体基板および化合物半導体基板の製造方法 |
US20170069721A1 (en) | 2015-09-08 | 2017-03-09 | M/A-Com Technology Solutions Holdings, Inc. | Parasitic channel mitigation using silicon carbide diffusion barrier regions |
KR102534857B1 (ko) * | 2016-02-12 | 2023-05-19 | 주식회사 엘엑스세미콘 | 탄화규소 에피 웨이퍼 및 이를 포함하는 반도체 소자 |
DE102016102875A1 (de) * | 2016-02-18 | 2017-08-24 | Infineon Technologies Austria Ag | Transistormodell, Verfahren zur computerbasierten Bestimmung einer Kennlinie eines Transistors, Vorrichtung und computerlesbares Speichermedium zum Ausführen des Verfahrens |
ITUA20162943A1 (it) | 2016-04-27 | 2017-10-27 | Pilegrowth Tech S R L | Metodo per la fabbricazione industriale di una struttura a semiconduttore a ridotto incurvamento. |
US9793430B1 (en) * | 2016-05-09 | 2017-10-17 | Qatar University | Heterojunction schottky gate bipolar transistor |
WO2018060679A1 (en) * | 2016-09-30 | 2018-04-05 | Anvil Semiconductors Limited | 3c-sic igbt |
GB2555451A (en) * | 2016-10-28 | 2018-05-02 | Univ Warwick | Coated wafer |
CN108717945B (zh) * | 2018-05-24 | 2022-01-07 | 西安理工大学 | 一种具有NiO/SiC异质发射结的SiC光触发晶闸管 |
US10615075B2 (en) * | 2018-06-13 | 2020-04-07 | Texas Instruments Incorporated | Dicing a wafer |
US11038023B2 (en) | 2018-07-19 | 2021-06-15 | Macom Technology Solutions Holdings, Inc. | III-nitride material semiconductor structures on conductive silicon substrates |
CN111834451B (zh) * | 2019-04-23 | 2023-04-07 | 株洲中车时代半导体有限公司 | 一种逆阻型门极换流晶闸管及其制造方法 |
CN111293113B (zh) * | 2020-02-21 | 2023-01-10 | 电子科技大学 | 采用单层金属工艺的sgto器件及其版图结构、制造方法 |
TWI730732B (zh) | 2020-04-22 | 2021-06-11 | 力晶積成電子製造股份有限公司 | 絕緣閘極場效雙極性電晶體及其製造方法 |
CN111863595A (zh) * | 2020-07-06 | 2020-10-30 | 璨隆科技发展有限公司 | 一种碳化硅pvt长晶用高质量籽晶的制备方法 |
CN116387359A (zh) * | 2023-06-02 | 2023-07-04 | 清华大学 | 逆阻型门极换流晶闸管及其制作方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5598823A (en) * | 1979-01-20 | 1980-07-28 | Tdk Corp | Manufacture of single crystal element |
JPS56150880A (en) * | 1980-04-23 | 1981-11-21 | Matsushita Electric Ind Co Ltd | Gallium nitride light emitting element chip and manufacture thereof |
JPS60113435A (ja) * | 1983-11-25 | 1985-06-19 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPS63260014A (ja) * | 1986-12-09 | 1988-10-27 | Sharp Corp | 炭化珪素単結晶薄膜の形成方法 |
US5272105A (en) * | 1988-02-11 | 1993-12-21 | Gte Laboratories Incorporated | Method of manufacturing an heteroepitaxial semiconductor structure |
US5030583A (en) * | 1988-12-02 | 1991-07-09 | Advanced Technolgy Materials, Inc. | Method of making single crystal semiconductor substrate articles and semiconductor device |
JPH0574669A (ja) * | 1991-09-18 | 1993-03-26 | Rohm Co Ltd | 半導体装置の製造方法 |
JP3058954B2 (ja) * | 1991-09-24 | 2000-07-04 | ローム株式会社 | 絶縁層の上に成長層を有する半導体装置の製造方法 |
JP2793460B2 (ja) * | 1993-01-08 | 1998-09-03 | ローム株式会社 | Soi構造の製造方法 |
JP3795145B2 (ja) | 1996-09-04 | 2006-07-12 | 松下電器産業株式会社 | 炭化珪素の成長法 |
JPH10135140A (ja) | 1996-10-28 | 1998-05-22 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロエピタキシャル成長方法、ヘテロエピタキシャル層および半導体発光素子 |
US6246076B1 (en) * | 1998-08-28 | 2001-06-12 | Cree, Inc. | Layered dielectric on silicon carbide semiconductor structures |
JP3702700B2 (ja) | 1999-03-31 | 2005-10-05 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
US6566158B2 (en) * | 2001-08-17 | 2003-05-20 | Rosemount Aerospace Inc. | Method of preparing a semiconductor using ion implantation in a SiC layer |
FR2836159B1 (fr) | 2002-02-15 | 2004-05-07 | Centre Nat Rech Scient | Procede de formation de couche de carbure de silicium ou de nitrure d'element iii sur un substrat adapte |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
JP5011681B2 (ja) * | 2004-12-02 | 2012-08-29 | 日産自動車株式会社 | 半導体装置 |
US8710510B2 (en) * | 2006-08-17 | 2014-04-29 | Cree, Inc. | High power insulated gate bipolar transistors |
WO2008056698A1 (fr) * | 2006-11-10 | 2008-05-15 | Sumitomo Electric Industries, Ltd. | Dispositif semi-conducteur de carbure de silicium et procédé de fabrication de celui-ci |
JP2009081352A (ja) * | 2007-09-27 | 2009-04-16 | Seiko Epson Corp | 半導体基板の製造方法及び半導体基板 |
JP2009123914A (ja) * | 2007-11-15 | 2009-06-04 | Fuji Electric Device Technology Co Ltd | 逆耐圧を有するスイッチング用半導体装置 |
JP2009130266A (ja) * | 2007-11-27 | 2009-06-11 | Toshiba Corp | 半導体基板および半導体装置、半導体装置の製造方法 |
JP2009218272A (ja) * | 2008-03-07 | 2009-09-24 | Covalent Materials Corp | 化合物半導体基板およびその製造方法 |
US8048225B2 (en) * | 2009-01-29 | 2011-11-01 | Soraa, Inc. | Large-area bulk gallium nitride wafer and method of manufacture |
-
2011
- 2011-10-26 GB GB1118502.2A patent/GB2495949B/en active Active
-
2012
- 2012-10-23 SG SG11201401184SA patent/SG11201401184SA/en unknown
- 2012-10-23 KR KR1020147013709A patent/KR20140082839A/ko not_active Application Discontinuation
- 2012-10-23 WO PCT/GB2012/052627 patent/WO2013061047A2/en active Application Filing
- 2012-10-23 EP EP12780270.0A patent/EP2771903A2/en not_active Withdrawn
- 2012-10-23 US US14/350,916 patent/US9520285B2/en active Active
- 2012-10-23 EP EP16167448.6A patent/EP3070734A1/en not_active Withdrawn
- 2012-10-23 CN CN201710218892.6A patent/CN107452784A/zh active Pending
- 2012-10-23 CN CN201280052855.8A patent/CN103946953B/zh active Active
- 2012-10-23 JP JP2014537716A patent/JP2015503215A/ja active Pending
-
2013
- 2013-09-23 US US14/034,024 patent/US9082811B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9082811B2 (en) | 2015-07-14 |
EP2771903A2 (en) | 2014-09-03 |
US20150206743A1 (en) | 2015-07-23 |
CN103946953B (zh) | 2017-04-26 |
EP3070734A1 (en) | 2016-09-21 |
WO2013061047A2 (en) | 2013-05-02 |
GB2495949A (en) | 2013-05-01 |
CN107452784A (zh) | 2017-12-08 |
CN103946953A (zh) | 2014-07-23 |
US20140014973A1 (en) | 2014-01-16 |
KR20140082839A (ko) | 2014-07-02 |
WO2013061047A3 (en) | 2013-06-20 |
GB2495949B (en) | 2015-03-11 |
US9520285B2 (en) | 2016-12-13 |
GB201118502D0 (en) | 2011-12-07 |
JP2015503215A (ja) | 2015-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2495949B (en) | Silicon carbide epitaxy | |
EP2742526A4 (en) | TRENCH BEARER | |
EP2696368A4 (en) | SEMICONDUCTOR DEVICE WITH SILICON CARBIDE | |
HUE059406T2 (hu) | PD-L1 alapú immunterápia | |
EP2749778A4 (en) | TERMINAL | |
GB2501958B (en) | Backpack | |
EP2778443A4 (en) | ATTACHED | |
EP2673635A4 (en) | IMMUNOTHERAPY THROUGH APOE | |
GB201208157D0 (en) | Polycrystalline diamond structure | |
EP2748843A4 (en) | susceptor | |
EP2763180A4 (en) | SEMICONDUCTOR ELEMENT FROM SILICON CARBIDE | |
EP2940196A4 (en) | PROCESS FOR THE PRODUCTION OF SiC MONOCRYSTAL OF TYPE n | |
GB201119342D0 (en) | Locking clip | |
EP2660100A4 (en) | HEADREST | |
HK1202794A1 (zh) | 丙型肝炎病毒的免疫治療 | |
EP2738291A4 (en) | DEVICE FOR PREPARING A SILICON CARBIDE CRYSTAL | |
EP2775015A4 (en) | METHOD OF MANUFACTURING A SIC-EINKRISTALL | |
GB2494997B (en) | Improved substrate growing system | |
GB201111415D0 (en) | Carrier | |
HK1201637A1 (en) | Silicon carbide epitaxy | |
HUE036284T2 (hu) | Eljárás szilícium-karbid elõállítására | |
GB201104765D0 (en) | Cushion | |
HK1154459A2 (en) | Headrest | |
GB201105470D0 (en) | Polycrystalline diamond | |
GB201113299D0 (en) | Polycrystalline diamond construction |