SG109618A1 - Method and vessel for the delivery of precursor materials - Google Patents

Method and vessel for the delivery of precursor materials

Info

Publication number
SG109618A1
SG109618A1 SG200405525A SG200405525A SG109618A1 SG 109618 A1 SG109618 A1 SG 109618A1 SG 200405525 A SG200405525 A SG 200405525A SG 200405525 A SG200405525 A SG 200405525A SG 109618 A1 SG109618 A1 SG 109618A1
Authority
SG
Singapore
Prior art keywords
volume
vessel
lid
delivery
protrusion
Prior art date
Application number
SG200405525A
Other languages
English (en)
Inventor
Michael Birtcher Charles
J Dunning Richard
Daniel Clark Robert
Kenneth Hochberg Arthur
Andrew Steidl Thomas
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG109618A1 publication Critical patent/SG109618A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/0318Processes
    • Y10T137/0391Affecting flow by the addition of material or energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/4891With holder for solid, flaky or pulverized material to be dissolved or entrained

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
SG200405525A 2003-08-19 2004-08-13 Method and vessel for the delivery of precursor materials SG109618A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49618703P 2003-08-19 2003-08-19
US58729504P 2004-07-12 2004-07-12
US10/902,778 US7261118B2 (en) 2003-08-19 2004-08-02 Method and vessel for the delivery of precursor materials

Publications (1)

Publication Number Publication Date
SG109618A1 true SG109618A1 (en) 2005-03-30

Family

ID=34069125

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200405525A SG109618A1 (en) 2003-08-19 2004-08-13 Method and vessel for the delivery of precursor materials
SG200700792-5A SG130188A1 (en) 2003-08-19 2004-08-13 Method and vessel for the delivery of precursor materials

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200700792-5A SG130188A1 (en) 2003-08-19 2004-08-13 Method and vessel for the delivery of precursor materials

Country Status (10)

Country Link
US (1) US7261118B2 (enExample)
EP (1) EP1508631B1 (enExample)
JP (1) JP4012181B2 (enExample)
KR (1) KR100590463B1 (enExample)
CN (1) CN100523289C (enExample)
AT (1) ATE466969T1 (enExample)
DE (1) DE602004026968D1 (enExample)
IL (1) IL163536A0 (enExample)
SG (2) SG109618A1 (enExample)
TW (1) TWI257436B (enExample)

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US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
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CN109576675B (zh) * 2019-01-15 2021-08-13 北京北方华创微电子装备有限公司 原子层沉积装置及方法
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Also Published As

Publication number Publication date
JP2005101564A (ja) 2005-04-14
TWI257436B (en) 2006-07-01
JP4012181B2 (ja) 2007-11-21
SG130188A1 (en) 2007-03-20
US7261118B2 (en) 2007-08-28
CN100523289C (zh) 2009-08-05
KR100590463B1 (ko) 2006-06-19
IL163536A0 (en) 2005-12-18
US20050039794A1 (en) 2005-02-24
ATE466969T1 (de) 2010-05-15
KR20050020643A (ko) 2005-03-04
DE602004026968D1 (de) 2010-06-17
EP1508631B1 (en) 2010-05-05
EP1508631A1 (en) 2005-02-23
TW200525046A (en) 2005-08-01
CN1611636A (zh) 2005-05-04

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