IL163536A0 - Method and vessel for the delivery of precursor materials - Google Patents

Method and vessel for the delivery of precursor materials

Info

Publication number
IL163536A0
IL163536A0 IL16353604A IL16353604A IL163536A0 IL 163536 A0 IL163536 A0 IL 163536A0 IL 16353604 A IL16353604 A IL 16353604A IL 16353604 A IL16353604 A IL 16353604A IL 163536 A0 IL163536 A0 IL 163536A0
Authority
IL
Israel
Prior art keywords
volume
vessel
lid
delivery
protrusion
Prior art date
Application number
IL16353604A
Other languages
English (en)
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of IL163536A0 publication Critical patent/IL163536A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0391—Affecting flow by the addition of material or energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/4891—With holder for solid, flaky or pulverized material to be dissolved or entrained

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
IL16353604A 2003-08-19 2004-08-12 Method and vessel for the delivery of precursor materials IL163536A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49618703P 2003-08-19 2003-08-19
US58729504P 2004-07-12 2004-07-12
US10/902,778 US7261118B2 (en) 2003-08-19 2004-08-02 Method and vessel for the delivery of precursor materials

Publications (1)

Publication Number Publication Date
IL163536A0 true IL163536A0 (en) 2005-12-18

Family

ID=34069125

Family Applications (1)

Application Number Title Priority Date Filing Date
IL16353604A IL163536A0 (en) 2003-08-19 2004-08-12 Method and vessel for the delivery of precursor materials

Country Status (10)

Country Link
US (1) US7261118B2 (enExample)
EP (1) EP1508631B1 (enExample)
JP (1) JP4012181B2 (enExample)
KR (1) KR100590463B1 (enExample)
CN (1) CN100523289C (enExample)
AT (1) ATE466969T1 (enExample)
DE (1) DE602004026968D1 (enExample)
IL (1) IL163536A0 (enExample)
SG (2) SG109618A1 (enExample)
TW (1) TWI257436B (enExample)

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US10443128B2 (en) * 2015-04-18 2019-10-15 Versum Materials Us, Llc Vessel and method for delivery of precursor materials
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US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
KR102344996B1 (ko) * 2017-08-18 2021-12-30 삼성전자주식회사 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
JP7230067B2 (ja) 2018-06-15 2023-02-28 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー シロキサン組成物、及び前記組成物を使用してケイ素含有膜を堆積させるための方法
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CN109576675B (zh) * 2019-01-15 2021-08-13 北京北方华创微电子装备有限公司 原子层沉积装置及方法
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Also Published As

Publication number Publication date
JP2005101564A (ja) 2005-04-14
TWI257436B (en) 2006-07-01
SG109618A1 (en) 2005-03-30
JP4012181B2 (ja) 2007-11-21
SG130188A1 (en) 2007-03-20
US7261118B2 (en) 2007-08-28
CN100523289C (zh) 2009-08-05
KR100590463B1 (ko) 2006-06-19
US20050039794A1 (en) 2005-02-24
ATE466969T1 (de) 2010-05-15
KR20050020643A (ko) 2005-03-04
DE602004026968D1 (de) 2010-06-17
EP1508631B1 (en) 2010-05-05
EP1508631A1 (en) 2005-02-23
TW200525046A (en) 2005-08-01
CN1611636A (zh) 2005-05-04

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