JP4012181B2 - 前駆体物質送給方法及び容器 - Google Patents

前駆体物質送給方法及び容器 Download PDF

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Publication number
JP4012181B2
JP4012181B2 JP2004239630A JP2004239630A JP4012181B2 JP 4012181 B2 JP4012181 B2 JP 4012181B2 JP 2004239630 A JP2004239630 A JP 2004239630A JP 2004239630 A JP2004239630 A JP 2004239630A JP 4012181 B2 JP4012181 B2 JP 4012181B2
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Japan
Prior art keywords
container
precursor
volume
lid
protrusion
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Expired - Fee Related
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JP2004239630A
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English (en)
Japanese (ja)
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JP2005101564A (ja
JP2005101564A5 (enExample
Inventor
マイケル バーチャー チャールズ
ジェイ．ダニング リチャード
ダニエル クラーク ロバート
ケネス ホクバーグ アーサー
アンドリュー ステイドル トーマス
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Air Products and Chemicals Inc
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Air Products and Chemicals Inc
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Publication of JP2005101564A5 publication Critical patent/JP2005101564A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0391—Affecting flow by the addition of material or energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/4891—With holder for solid, flaky or pulverized material to be dissolved or entrained

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
JP2004239630A 2003-08-19 2004-08-19 前駆体物質送給方法及び容器 Expired - Fee Related JP4012181B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49618703P 2003-08-19 2003-08-19
US58729504P 2004-07-12 2004-07-12
US10/902,778 US7261118B2 (en) 2003-08-19 2004-08-02 Method and vessel for the delivery of precursor materials

Publications (3)

Publication Number Publication Date
JP2005101564A JP2005101564A (ja) 2005-04-14
JP2005101564A5 JP2005101564A5 (enExample) 2006-04-06
JP4012181B2 true JP4012181B2 (ja) 2007-11-21

Family

ID=34069125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004239630A Expired - Fee Related JP4012181B2 (ja) 2003-08-19 2004-08-19 前駆体物質送給方法及び容器

Country Status (10)

Country Link
US (1) US7261118B2 (enExample)
EP (1) EP1508631B1 (enExample)
JP (1) JP4012181B2 (enExample)
KR (1) KR100590463B1 (enExample)
CN (1) CN100523289C (enExample)
AT (1) ATE466969T1 (enExample)
DE (1) DE602004026968D1 (enExample)
IL (1) IL163536A0 (enExample)
SG (2) SG109618A1 (enExample)
TW (1) TWI257436B (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7601225B2 (en) * 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US7300038B2 (en) 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US6909839B2 (en) 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
JP4312555B2 (ja) * 2003-09-18 2009-08-12 富士フイルム株式会社 真空蒸着用ルツボおよび蛍光体シート製造装置
GB2432371B (en) * 2005-11-17 2011-06-15 Epichem Ltd Improved bubbler for the transportation of substances by a carrier gas
FI121430B (fi) * 2006-04-28 2010-11-15 Beneq Oy Kuuma lähde
DE102006022534A1 (de) * 2006-05-15 2007-11-22 Aixtron Ag Quellenbehälter einse VPE-Reaktors
DE102006023046B4 (de) * 2006-05-17 2009-02-05 Qimonda Ag Verfahren und Ausgangsmaterial zum Bereitstellen eines gasförmigen Precursors
US20100242835A1 (en) * 2006-06-09 2010-09-30 S.O.I.T.E.C. Silicon On Insulator Technologies High volume delivery system for gallium trichloride
US20080018004A1 (en) * 2006-06-09 2008-01-24 Air Products And Chemicals, Inc. High Flow GaCl3 Delivery
KR100840783B1 (ko) 2006-08-21 2008-06-23 삼성전자주식회사 전구체 기화 방법 및 장치, 및 이를 이용한 유전막 형성방법
US20080241805A1 (en) * 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
CN101522943B (zh) * 2006-10-10 2013-04-24 Asm美国公司 前体输送系统
US9109287B2 (en) * 2006-10-19 2015-08-18 Air Products And Chemicals, Inc. Solid source container with inlet plenum
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
US9481943B2 (en) * 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
EP2055804A1 (en) * 2007-10-29 2009-05-06 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method for preparing a deposition from a vapour
US8343583B2 (en) * 2008-07-10 2013-01-01 Asm International N.V. Method for vaporizing non-gaseous precursor in a fluidized bed
JP5898624B2 (ja) 2009-11-02 2016-04-06 シグマ−アルドリッチ・カンパニー、エルエルシー 蒸発器
US9809711B2 (en) 2012-01-17 2017-11-07 Versum Materials Us, Llc Catalyst and formulations comprising same for alkoxysilanes hydrolysis reaction in semiconductor process
US20130243968A1 (en) 2012-03-16 2013-09-19 Air Products And Chemicals, Inc. Catalyst synthesis for organosilane sol-gel reactions
US9598766B2 (en) 2012-05-27 2017-03-21 Air Products And Chemicals, Inc. Vessel with filter
KR20200124780A (ko) 2012-05-31 2020-11-03 엔테그리스, 아이엔씨. 배취식 침착을 위한 고 물질 플럭스를 갖는 유체의 소스 시약-기반 수송
US9279604B2 (en) 2012-06-05 2016-03-08 Applied Materials, Inc. Compact ampoule thermal management system
WO2014018740A1 (en) * 2012-07-25 2014-01-30 William Kimmerle Chemical precursor bubbler assembly
US10170297B2 (en) 2013-08-22 2019-01-01 Versum Materials Us, Llc Compositions and methods using same for flowable oxide deposition
US10443128B2 (en) * 2015-04-18 2019-10-15 Versum Materials Us, Llc Vessel and method for delivery of precursor materials
KR101606681B1 (ko) * 2016-01-13 2016-03-28 (주)서일퍼시픽 이동식 기침 유발기
US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
KR102344996B1 (ko) * 2017-08-18 2021-12-30 삼성전자주식회사 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
JP7230067B2 (ja) 2018-06-15 2023-02-28 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー シロキサン組成物、及び前記組成物を使用してケイ素含有膜を堆積させるための方法
KR20200020608A (ko) 2018-08-16 2020-02-26 에이에스엠 아이피 홀딩 비.브이. 고체 소스 승화기
CN109576675B (zh) * 2019-01-15 2021-08-13 北京北方华创微电子装备有限公司 原子层沉积装置及方法
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
EP4298262A4 (en) 2021-02-26 2025-04-09 Entegris, Inc. Solids vaporizer
US20240011160A1 (en) * 2022-07-11 2024-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Thin film deposition with improved control of precursor
WO2024166518A1 (ja) * 2023-02-08 2024-08-15 株式会社堀場エステック 液体材料気化装置、液体材料気化システム
DE102023136171A1 (de) * 2023-12-21 2025-06-26 Element 3-5 Gmbh Vorrichtung zur Herstellung von elektronischen oder opto-elektronischen Bauelementen oder Festkörperbatterieschichten oder von metallischen Einfach- oder Mehrfachschichten

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723967A (en) * 1987-04-27 1988-02-09 Advanced Technology Materials, Inc. Valve block and container for semiconductor source reagent dispensing and/or purification
JPH01168331A (ja) * 1987-12-24 1989-07-03 Mitsui Toatsu Chem Inc 有機金属化合物の飽和方法
DE3801147A1 (de) * 1988-01-16 1989-07-27 Philips Patentverwaltung Vorrichtung zum erzeugen eines mit dem dampf eines wenig fluechtigen stoffes angereicherten gasstroms
JPH0269389A (ja) * 1988-08-31 1990-03-08 Toyo Stauffer Chem Co 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法
US5227340A (en) * 1990-02-05 1993-07-13 Motorola, Inc. Process for fabricating semiconductor devices using a solid reactant source
JPH0632695A (ja) 1992-07-14 1994-02-08 Fujitsu Ltd バブラー
US5276585A (en) * 1992-11-16 1994-01-04 Thermalloy, Inc. Heat sink mounting apparatus
US5381605A (en) * 1993-01-08 1995-01-17 Photonics Research Incorporated Method and apparatus for delivering gas
US5377429A (en) * 1993-04-19 1995-01-03 Micron Semiconductor, Inc. Method and appartus for subliming precursors
US5607002A (en) * 1993-04-28 1997-03-04 Advanced Delivery & Chemical Systems, Inc. Chemical refill system for high purity chemicals
US5707424A (en) * 1994-10-13 1998-01-13 Advanced Technology Materials, Inc. Process system with integrated gas storage and delivery unit
JP3417751B2 (ja) * 1995-02-13 2003-06-16 株式会社東芝 半導体装置の製造方法
US5989305A (en) * 1995-03-09 1999-11-23 Shin-Etsu Chemical Co., Ltd. Feeder of a solid organometallic compound
US5674574A (en) * 1996-05-20 1997-10-07 Micron Technology, Inc. Vapor delivery system for solid precursors and method regarding same
US6058012A (en) * 1996-08-26 2000-05-02 Compaq Computer Corporation Apparatus, method and system for thermal management of an electronic system having semiconductor devices
KR100364115B1 (ko) * 1996-12-17 2002-12-11 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 화학 증착용 시약 공급 용기
US6089184A (en) * 1997-06-11 2000-07-18 Tokyo Electron Limited CVD apparatus and CVD method
US6520218B1 (en) * 1998-09-03 2003-02-18 Advanced Technology Materials, Inc. Container chemical guard
US6202591B1 (en) * 1998-11-12 2001-03-20 Flex Products, Inc. Linear aperture deposition apparatus and coating process
JP2000345345A (ja) * 1999-06-04 2000-12-12 Mitsubishi Electric Corp Ｃｖｄ装置およびｃｖｄ装置用気化装置
US6444038B1 (en) * 1999-12-27 2002-09-03 Morton International, Inc. Dual fritted bubbler
KR100360494B1 (ko) * 1999-09-21 2002-11-13 삼성전자 주식회사 기화장치
US6244331B1 (en) * 1999-10-22 2001-06-12 Intel Corporation Heatsink with integrated blower for improved heat transfer
GB9929279D0 (en) 1999-12-11 2000-02-02 Epichem Ltd An improved method of and apparatus for the delivery of precursors in the vapour phase to a plurality of epitaxial reactor sites
EP1160355B1 (en) * 2000-05-31 2004-10-27 Shipley Company LLC Bubbler
US6837251B1 (en) * 2000-06-21 2005-01-04 Air Products And Chemicals, Inc. Multiple contents container assembly for ultrapure solvent purging
US6581649B2 (en) * 2001-07-13 2003-06-24 L'air Liquide - Societe Anonyme A'directiore Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Methods and apparatus for delivering high purity liquids with low vapor pressure
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20030111014A1 (en) * 2001-12-18 2003-06-19 Donatucci Matthew B. Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds
JP2003318170A (ja) 2002-04-26 2003-11-07 Japan Pionics Co Ltd 気化器
JP3822135B2 (ja) 2002-05-13 2006-09-13 日本パイオニクス株式会社 気化供給装置
US7601225B2 (en) 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US6797337B2 (en) * 2002-08-19 2004-09-28 Micron Technology, Inc. Method for delivering precursors
US6740586B1 (en) * 2002-11-06 2004-05-25 Advanced Technology Materials, Inc. Vapor delivery system for solid precursors and method of using same
US6909839B2 (en) * 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material

Also Published As

Publication number Publication date
JP2005101564A (ja) 2005-04-14
TWI257436B (en) 2006-07-01
SG109618A1 (en) 2005-03-30
SG130188A1 (en) 2007-03-20
US7261118B2 (en) 2007-08-28
CN100523289C (zh) 2009-08-05
KR100590463B1 (ko) 2006-06-19
IL163536A0 (en) 2005-12-18
US20050039794A1 (en) 2005-02-24
ATE466969T1 (de) 2010-05-15
KR20050020643A (ko) 2005-03-04
DE602004026968D1 (de) 2010-06-17
EP1508631B1 (en) 2010-05-05
EP1508631A1 (en) 2005-02-23
TW200525046A (en) 2005-08-01
CN1611636A (zh) 2005-05-04

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