DE602004026968D1 - Vorrichtung und Verfahren zum Abgeben von Vorläufermaterial - Google Patents

Vorrichtung und Verfahren zum Abgeben von Vorläufermaterial

Info

Publication number
DE602004026968D1
DE602004026968D1 DE200460026968 DE602004026968T DE602004026968D1 DE 602004026968 D1 DE602004026968 D1 DE 602004026968D1 DE 200460026968 DE200460026968 DE 200460026968 DE 602004026968 T DE602004026968 T DE 602004026968T DE 602004026968 D1 DE602004026968 D1 DE 602004026968D1
Authority
DE
Germany
Prior art keywords
volume
lid
protrusion
precursor
precursor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE200460026968
Other languages
German (de)
English (en)
Inventor
Charles Michael Birtcher
Richard J Dunning
Robert Daniel Clark
Arthur Kenneth Hochberg
Thomas Andrew Steidl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of DE602004026968D1 publication Critical patent/DE602004026968D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0391—Affecting flow by the addition of material or energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/4891—With holder for solid, flaky or pulverized material to be dissolved or entrained

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
DE200460026968 2003-08-19 2004-08-17 Vorrichtung und Verfahren zum Abgeben von Vorläufermaterial Expired - Lifetime DE602004026968D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49618703P 2003-08-19 2003-08-19
US58729504P 2004-07-12 2004-07-12
US10/902,778 US7261118B2 (en) 2003-08-19 2004-08-02 Method and vessel for the delivery of precursor materials

Publications (1)

Publication Number Publication Date
DE602004026968D1 true DE602004026968D1 (de) 2010-06-17

Family

ID=34069125

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200460026968 Expired - Lifetime DE602004026968D1 (de) 2003-08-19 2004-08-17 Vorrichtung und Verfahren zum Abgeben von Vorläufermaterial

Country Status (10)

Country Link
US (1) US7261118B2 (enExample)
EP (1) EP1508631B1 (enExample)
JP (1) JP4012181B2 (enExample)
KR (1) KR100590463B1 (enExample)
CN (1) CN100523289C (enExample)
AT (1) ATE466969T1 (enExample)
DE (1) DE602004026968D1 (enExample)
IL (1) IL163536A0 (enExample)
SG (2) SG109618A1 (enExample)
TW (1) TWI257436B (enExample)

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US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
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CN109576675B (zh) * 2019-01-15 2021-08-13 北京北方华创微电子装备有限公司 原子层沉积装置及方法
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Also Published As

Publication number Publication date
KR20050020643A (ko) 2005-03-04
SG109618A1 (en) 2005-03-30
EP1508631B1 (en) 2010-05-05
TWI257436B (en) 2006-07-01
JP4012181B2 (ja) 2007-11-21
ATE466969T1 (de) 2010-05-15
CN1611636A (zh) 2005-05-04
US7261118B2 (en) 2007-08-28
US20050039794A1 (en) 2005-02-24
SG130188A1 (en) 2007-03-20
KR100590463B1 (ko) 2006-06-19
CN100523289C (zh) 2009-08-05
IL163536A0 (en) 2005-12-18
EP1508631A1 (en) 2005-02-23
TW200525046A (en) 2005-08-01
JP2005101564A (ja) 2005-04-14

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