SG10202009482VA - Halftone Phase Shift-Type Photomask Blank, Method of Manufacturing thereof, and Halftone Phase Shift-Type Photomask - Google Patents

Halftone Phase Shift-Type Photomask Blank, Method of Manufacturing thereof, and Halftone Phase Shift-Type Photomask

Info

Publication number
SG10202009482VA
SG10202009482VA SG10202009482VA SG10202009482VA SG10202009482VA SG 10202009482V A SG10202009482V A SG 10202009482VA SG 10202009482V A SG10202009482V A SG 10202009482VA SG 10202009482V A SG10202009482V A SG 10202009482VA SG 10202009482V A SG10202009482V A SG 10202009482VA
Authority
SG
Singapore
Prior art keywords
phase shift
halftone phase
type photomask
manufacturing
photomask blank
Prior art date
Application number
SG10202009482VA
Other languages
English (en)
Inventor
Takuro Kosaka
Keisuke Sakurai
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10202009482VA publication Critical patent/SG10202009482VA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
SG10202009482VA 2019-09-27 2020-09-25 Halftone Phase Shift-Type Photomask Blank, Method of Manufacturing thereof, and Halftone Phase Shift-Type Photomask SG10202009482VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019176829A JP7192731B2 (ja) 2019-09-27 2019-09-27 ハーフトーン位相シフト型フォトマスクブランク、その製造方法、及びハーフトーン位相シフト型フォトマスク

Publications (1)

Publication Number Publication Date
SG10202009482VA true SG10202009482VA (en) 2021-04-29

Family

ID=72613774

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202009482VA SG10202009482VA (en) 2019-09-27 2020-09-25 Halftone Phase Shift-Type Photomask Blank, Method of Manufacturing thereof, and Halftone Phase Shift-Type Photomask

Country Status (7)

Country Link
US (1) US11644743B2 (ko)
EP (1) EP3798727A3 (ko)
JP (1) JP7192731B2 (ko)
KR (1) KR102605825B1 (ko)
CN (1) CN112578628A (ko)
SG (1) SG10202009482VA (ko)
TW (1) TWI834914B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7547305B2 (ja) * 2021-11-11 2024-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
KR20230090601A (ko) * 2021-12-15 2023-06-22 에스케이엔펄스 주식회사 블랭크 마스크, 블랭크 마스크 성막장치 및 블랭크 마스크의 제조방법

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064769B2 (ja) 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
JP3608654B2 (ja) * 2000-09-12 2005-01-12 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスク
JP4711317B2 (ja) 2000-09-12 2011-06-29 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
JP4587806B2 (ja) 2004-12-27 2010-11-24 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4930964B2 (ja) 2005-05-20 2012-05-16 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
JP4933753B2 (ja) 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
JP4784983B2 (ja) * 2006-01-10 2011-10-05 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4551344B2 (ja) 2006-03-02 2010-09-29 信越化学工業株式会社 フォトマスクブランクおよびフォトマスク
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP2016035559A (ja) * 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
EP3086174B1 (en) * 2015-03-31 2017-11-15 Shin-Etsu Chemical Co., Ltd. Method for preparing halftone phase shift photomask blank
JP6332109B2 (ja) 2015-03-31 2018-05-30 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6341129B2 (ja) 2015-03-31 2018-06-13 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
US9897911B2 (en) * 2015-08-31 2018-02-20 Shin-Etsu Chemical Co., Ltd. Halftone phase shift photomask blank, making method, and halftone phase shift photomask
JP6558326B2 (ja) * 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置
JP6733464B2 (ja) * 2016-09-28 2020-07-29 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
US20180335692A1 (en) * 2017-05-18 2018-11-22 S&S Tech Co., Ltd. Phase-shift blankmask and phase-shift photomask
JP6753375B2 (ja) * 2017-07-28 2020-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法
KR102427106B1 (ko) * 2017-11-24 2022-08-01 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
US20200379338A1 (en) * 2017-12-26 2020-12-03 Hoya Corporation Mask blank, phase shift mask, and method of manufacturing semiconductor device
JP6547019B1 (ja) * 2018-02-22 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
JP2019176829A (ja) 2018-03-30 2019-10-17 大研医器株式会社 遺伝子検査キット

Also Published As

Publication number Publication date
JP2021056290A (ja) 2021-04-08
TWI834914B (zh) 2024-03-11
JP7192731B2 (ja) 2022-12-20
TW202119121A (zh) 2021-05-16
US11644743B2 (en) 2023-05-09
EP3798727A3 (en) 2021-04-21
KR102605825B1 (ko) 2023-11-27
CN112578628A (zh) 2021-03-30
KR20210037561A (ko) 2021-04-06
US20210096455A1 (en) 2021-04-01
EP3798727A2 (en) 2021-03-31

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