SG11202113133RA - Photomask blank, method for producing photomask, and photomask - Google Patents

Photomask blank, method for producing photomask, and photomask

Info

Publication number
SG11202113133RA
SG11202113133RA SG11202113133RA SG11202113133RA SG11202113133RA SG 11202113133R A SG11202113133R A SG 11202113133RA SG 11202113133R A SG11202113133R A SG 11202113133RA SG 11202113133R A SG11202113133R A SG 11202113133RA SG 11202113133R A SG11202113133R A SG 11202113133RA
Authority
SG
Singapore
Prior art keywords
photomask
producing
blank
photomask blank
producing photomask
Prior art date
Application number
SG11202113133RA
Inventor
Naoki Matsuhashi
Kouhei Sasamoto
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG11202113133RA publication Critical patent/SG11202113133RA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/58Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
SG11202113133RA 2019-05-31 2020-04-20 Photomask blank, method for producing photomask, and photomask SG11202113133RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019102162A JP7044095B2 (en) 2019-05-31 2019-05-31 Photomask blank, photomask manufacturing method and photomask
PCT/JP2020/017009 WO2020241116A1 (en) 2019-05-31 2020-04-20 Photomask blank, method for producing photomask, and photomask

Publications (1)

Publication Number Publication Date
SG11202113133RA true SG11202113133RA (en) 2021-12-30

Family

ID=73552332

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202113133RA SG11202113133RA (en) 2019-05-31 2020-04-20 Photomask blank, method for producing photomask, and photomask

Country Status (8)

Country Link
US (1) US11971653B2 (en)
EP (1) EP3979001A4 (en)
JP (1) JP7044095B2 (en)
KR (1) KR102598715B1 (en)
CN (1) CN113874784A (en)
SG (1) SG11202113133RA (en)
TW (1) TWI824153B (en)
WO (1) WO2020241116A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023156717A (en) * 2022-04-13 2023-10-25 信越化学工業株式会社 Reflection type photomask blank, production method of reflection type photomask, and reflection type photomask

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182439A (en) * 1984-02-29 1985-09-18 Konishiroku Photo Ind Co Ltd Chromium mask material
JP2983020B1 (en) 1998-12-18 1999-11-29 ホーヤ株式会社 Halftone type phase shift mask blank and halftone type phase shift mask
JP3956103B2 (en) * 2002-02-26 2007-08-08 信越化学工業株式会社 Photomask blank, photomask and photomask blank evaluation method
JP2002287330A (en) * 2002-03-01 2002-10-03 Shin Etsu Chem Co Ltd Blank for photomask and photomask
JP2004053663A (en) * 2002-07-16 2004-02-19 Shin Etsu Chem Co Ltd Photomask blank, photomask, and method of selecting photomask blank
KR101621985B1 (en) * 2008-03-31 2016-05-17 호야 가부시키가이샤 Photomask blank and method for manufacturing the same
KR20110066207A (en) 2008-09-30 2011-06-16 호야 가부시키가이샤 Photomask blank, photomask, and process for producing same
JP5464186B2 (en) * 2011-09-07 2014-04-09 信越化学工業株式会社 Photomask blank, photomask and manufacturing method thereof
JP6279858B2 (en) * 2013-09-03 2018-02-14 Hoya株式会社 Mask blank manufacturing method and transfer mask manufacturing method
JP6292581B2 (en) * 2014-03-30 2018-03-14 Hoya株式会社 Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method
US10018905B2 (en) * 2015-04-06 2018-07-10 S & S Tech Co., Ltd Phase shift blankmask and photomask
JP6341166B2 (en) * 2015-09-03 2018-06-13 信越化学工業株式会社 Photomask blank
JP6632950B2 (en) * 2016-09-21 2020-01-22 Hoya株式会社 Photomask blank, photomask blank manufacturing method, photomask manufacturing method using the same, and display device manufacturing method
JP6812236B2 (en) * 2016-12-27 2021-01-13 Hoya株式会社 A phase shift mask blank, a method for manufacturing a phase shift mask using the blank, and a method for manufacturing a display device.
JP6819546B2 (en) * 2017-11-13 2021-01-27 信越化学工業株式会社 Photomask blank and photomask manufacturing method

Also Published As

Publication number Publication date
EP3979001A1 (en) 2022-04-06
KR20220013572A (en) 2022-02-04
TWI824153B (en) 2023-12-01
US11971653B2 (en) 2024-04-30
KR102598715B1 (en) 2023-11-07
CN113874784A (en) 2021-12-31
JP7044095B2 (en) 2022-03-30
WO2020241116A1 (en) 2020-12-03
JP2020197566A (en) 2020-12-10
US20220229358A1 (en) 2022-07-21
EP3979001A4 (en) 2023-06-07
TW202105045A (en) 2021-02-01

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