SG10202009482VA - Halftone Phase Shift-Type Photomask Blank, Method of Manufacturing thereof, and Halftone Phase Shift-Type Photomask - Google Patents

Halftone Phase Shift-Type Photomask Blank, Method of Manufacturing thereof, and Halftone Phase Shift-Type Photomask

Info

Publication number
SG10202009482VA
SG10202009482VA SG10202009482VA SG10202009482VA SG10202009482VA SG 10202009482V A SG10202009482V A SG 10202009482VA SG 10202009482V A SG10202009482V A SG 10202009482VA SG 10202009482V A SG10202009482V A SG 10202009482VA SG 10202009482V A SG10202009482V A SG 10202009482VA
Authority
SG
Singapore
Prior art keywords
phase shift
halftone phase
type photomask
manufacturing
photomask blank
Prior art date
Application number
SG10202009482VA
Inventor
Takuro Kosaka
Keisuke Sakurai
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10202009482VA publication Critical patent/SG10202009482VA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
SG10202009482VA 2019-09-27 2020-09-25 Halftone Phase Shift-Type Photomask Blank, Method of Manufacturing thereof, and Halftone Phase Shift-Type Photomask SG10202009482VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019176829A JP7192731B2 (en) 2019-09-27 2019-09-27 Halftone phase shift photomask blank, manufacturing method thereof, and halftone phase shift photomask

Publications (1)

Publication Number Publication Date
SG10202009482VA true SG10202009482VA (en) 2021-04-29

Family

ID=72613774

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202009482VA SG10202009482VA (en) 2019-09-27 2020-09-25 Halftone Phase Shift-Type Photomask Blank, Method of Manufacturing thereof, and Halftone Phase Shift-Type Photomask

Country Status (6)

Country Link
US (1) US11644743B2 (en)
EP (1) EP3798727A3 (en)
JP (1) JP7192731B2 (en)
KR (1) KR102605825B1 (en)
CN (1) CN112578628A (en)
SG (1) SG10202009482VA (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023071513A (en) * 2021-11-11 2023-05-23 信越化学工業株式会社 Photomask blank, method for manufacturing photomask, and photomask

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064769B2 (en) 1992-11-21 2000-07-12 アルバック成膜株式会社 PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK
JP3608654B2 (en) * 2000-09-12 2005-01-12 Ｈｏｙａ株式会社 Phase shift mask blank, phase shift mask
JP4711317B2 (en) * 2000-09-12 2011-06-29 Ｈｏｙａ株式会社 Phase shift mask blank manufacturing method, phase shift mask manufacturing method, and pattern transfer method
JP2002258458A (en) * 2000-12-26 2002-09-11 Hoya Corp Halftone phase shift mask and mask blank
JP4587806B2 (en) * 2004-12-27 2010-11-24 Ｈｏｙａ株式会社 Halftone phase shift mask blank and halftone phase shift mask
JP4930964B2 (en) * 2005-05-20 2012-05-16 Ｈｏｙａ株式会社 Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask
JP4933753B2 (en) 2005-07-21 2012-05-16 信越化学工業株式会社 Phase shift mask blank, phase shift mask, and manufacturing method thereof
JP4784983B2 (en) * 2006-01-10 2011-10-05 Ｈｏｙａ株式会社 Halftone phase shift mask blank and halftone phase shift mask
JP4551344B2 (en) 2006-03-02 2010-09-29 信越化学工業株式会社 Photomask blank and photomask
JP4509050B2 (en) 2006-03-10 2010-07-21 信越化学工業株式会社 Photomask blank and photomask
JP5702920B2 (en) * 2008-06-25 2015-04-15 Hoya株式会社 Phase shift mask blank, phase shift mask, and method of manufacturing phase shift mask blank
JP6264238B2 (en) * 2013-11-06 2018-01-24 信越化学工業株式会社 Halftone phase shift photomask blank, halftone phase shift photomask, and pattern exposure method
JP2016035559A (en) * 2014-08-04 2016-03-17 信越化学工業株式会社 Halftone phase shift photomask blank and method for manufacturing the same
JP6418035B2 (en) * 2015-03-31 2018-11-07 信越化学工業株式会社 Phase shift mask blanks and phase shift masks
JP6332109B2 (en) * 2015-03-31 2018-05-30 信越化学工業株式会社 Method for manufacturing halftone phase shift photomask blank
EP3086174B1 (en) * 2015-03-31 2017-11-15 Shin-Etsu Chemical Co., Ltd. Method for preparing halftone phase shift photomask blank
JP6341129B2 (en) 2015-03-31 2018-06-13 信越化学工業株式会社 Halftone phase shift mask blank and halftone phase shift mask
US9897911B2 (en) * 2015-08-31 2018-02-20 Shin-Etsu Chemical Co., Ltd. Halftone phase shift photomask blank, making method, and halftone phase shift photomask
JP6558326B2 (en) * 2016-08-23 2019-08-14 信越化学工業株式会社 Halftone phase shift mask blank manufacturing method, halftone phase shift mask blank, halftone phase shift mask, and thin film forming apparatus for photomask blank
JP6733464B2 (en) * 2016-09-28 2020-07-29 信越化学工業株式会社 Halftone phase shift mask blank and halftone phase shift mask
US20180335692A1 (en) * 2017-05-18 2018-11-22 S&S Tech Co., Ltd. Phase-shift blankmask and phase-shift photomask
JP2019176829A (en) 2018-03-30 2019-10-17 大研医器株式会社 Genetic screening kit

Also Published As

Publication number Publication date
EP3798727A2 (en) 2021-03-31
JP7192731B2 (en) 2022-12-20
KR102605825B1 (en) 2023-11-27
TW202119121A (en) 2021-05-16
JP2021056290A (en) 2021-04-08
KR20210037561A (en) 2021-04-06
US20210096455A1 (en) 2021-04-01
US11644743B2 (en) 2023-05-09
CN112578628A (en) 2021-03-30
EP3798727A3 (en) 2021-04-21

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