SG10202006188PA - Semiconductor memory devices and methods of fabricating the same - Google Patents
Semiconductor memory devices and methods of fabricating the sameInfo
- Publication number
- SG10202006188PA SG10202006188PA SG10202006188PA SG10202006188PA SG10202006188PA SG 10202006188P A SG10202006188P A SG 10202006188PA SG 10202006188P A SG10202006188P A SG 10202006188PA SG 10202006188P A SG10202006188P A SG 10202006188PA SG 10202006188P A SG10202006188P A SG 10202006188PA
- Authority
- SG
- Singapore
- Prior art keywords
- fabricating
- methods
- same
- semiconductor memory
- memory devices
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190124881A KR20210042225A (ko) | 2019-10-08 | 2019-10-08 | 반도체 메모리 소자 및 그의 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202006188PA true SG10202006188PA (en) | 2021-05-28 |
Family
ID=75273518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202006188PA SG10202006188PA (en) | 2019-10-08 | 2020-06-26 | Semiconductor memory devices and methods of fabricating the same |
Country Status (4)
Country | Link |
---|---|
US (2) | US11374008B2 (zh) |
KR (1) | KR20210042225A (zh) |
CN (1) | CN112635463A (zh) |
SG (1) | SG10202006188PA (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210077098A (ko) | 2019-12-16 | 2021-06-25 | 삼성전자주식회사 | 반도체 메모리 소자 및 그의 제조 방법 |
US11469232B2 (en) * | 2021-02-09 | 2022-10-11 | Micron Technology, Inc. | Epitaxial silicon within horizontal access devices in vertical three dimensional (3D) memory |
KR20220148630A (ko) * | 2021-04-29 | 2022-11-07 | 삼성전자주식회사 | 반도체 메모리 소자 |
KR20220168884A (ko) * | 2021-06-17 | 2022-12-26 | 삼성전자주식회사 | 반도체 메모리 소자 |
TW202318576A (zh) * | 2021-08-03 | 2023-05-01 | 美商應用材料股份有限公司 | 用於三維dram的選擇性矽化物沉積 |
CN117690955A (zh) * | 2022-09-01 | 2024-03-12 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
US20240121939A1 (en) * | 2022-10-11 | 2024-04-11 | Nanya Technology Corporation | Semiconductor device including 3d memory structure |
CN116209254B (zh) * | 2022-10-18 | 2024-03-29 | 北京超弦存储器研究院 | 一种3d存储阵列及其制备方法、电子设备 |
CN115346988B (zh) * | 2022-10-18 | 2023-01-24 | 北京超弦存储器研究院 | 一种晶体管、3d存储器及其制备方法、电子设备 |
CN117425337A (zh) * | 2022-12-22 | 2024-01-19 | 北京超弦存储器研究院 | 一种3d存储器及其制备方法、电子设备 |
CN116347889B (zh) * | 2023-03-14 | 2024-01-12 | 北京超弦存储器研究院 | 存储单元、存储器、存储器的制备方法及电子设备 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008078404A (ja) | 2006-09-21 | 2008-04-03 | Toshiba Corp | 半導体メモリ及びその製造方法 |
US8501609B2 (en) | 2012-02-02 | 2013-08-06 | Tower Semiconductor Ltd. | Method for generating a three-dimensional NAND memory with mono-crystalline channels using sacrificial material |
KR101528806B1 (ko) | 2014-04-02 | 2015-06-15 | 서울대학교산학협력단 | 비트라인의 커패시턴스 차이를 줄이기 위한 3차원 채널 적층형 낸드 플래시 메모리 어레이 |
US10008265B2 (en) | 2014-09-06 | 2018-06-26 | NEO Semiconductor, Inc. | Method and apparatus for providing three-dimensional integrated nonvolatile memory (NVM) and dynamic random access memory (DRAM) memory device |
US10121553B2 (en) | 2015-09-30 | 2018-11-06 | Sunrise Memory Corporation | Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
KR102333021B1 (ko) | 2017-04-24 | 2021-12-01 | 삼성전자주식회사 | 반도체 장치 |
KR20220066173A (ko) | 2017-08-31 | 2022-05-23 | 마이크론 테크놀로지, 인크 | 반도체 장치, 하이브리드 트랜지스터 및 관련 방법 |
US10535659B2 (en) * | 2017-09-29 | 2020-01-14 | Samsung Electronics Co., Ltd. | Semiconductor memory devices |
KR102524614B1 (ko) * | 2017-11-24 | 2023-04-24 | 삼성전자주식회사 | 반도체 메모리 소자 |
CN109285836B (zh) | 2018-08-28 | 2023-10-10 | 中国科学院微电子研究所 | 半导体存储设备及其制造方法及包括存储设备的电子设备 |
-
2019
- 2019-10-08 KR KR1020190124881A patent/KR20210042225A/ko not_active Application Discontinuation
-
2020
- 2020-06-26 SG SG10202006188PA patent/SG10202006188PA/en unknown
- 2020-07-15 CN CN202010679219.4A patent/CN112635463A/zh active Pending
- 2020-09-29 US US17/035,843 patent/US11374008B2/en active Active
-
2022
- 2022-05-25 US US17/752,921 patent/US11950405B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11950405B2 (en) | 2024-04-02 |
KR20210042225A (ko) | 2021-04-19 |
US20210104527A1 (en) | 2021-04-08 |
US20220285356A1 (en) | 2022-09-08 |
US11374008B2 (en) | 2022-06-28 |
CN112635463A (zh) | 2021-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10202007030PA (en) | Semiconductor Memory Devices And Methods Of Operating The Semiconductor Memory Devices | |
SG10202006188PA (en) | Semiconductor memory devices and methods of fabricating the same | |
SG10202006561WA (en) | Semiconductor device and method of fabricating the same | |
SG10201907825PA (en) | Three-dimensional semiconductor memory devices and methods of fabricating the same | |
SG10201911469VA (en) | Vertical Memory Devices And Methods Of Manufacturing The Same | |
SG10201907458SA (en) | Semiconductor device and method of manufacturing the same | |
SG10201907920TA (en) | Semiconductor Package And Method Of Manufacturing The Same | |
SG10201907737SA (en) | Semiconductor package and method of fabricating the same | |
SG10201904480SA (en) | Semiconductor chips and methods of manufacturing the same | |
SG10201905833RA (en) | Semiconductor device and manufacturing method of the semiconductor device | |
SG10201907013YA (en) | Semiconductor Device And Method Of Manufacturing The Same | |
SG11202103709VA (en) | Semiconductor structure and method of forming the same | |
SG10202005977TA (en) | Integrated circuit device and method of manufacturing the same | |
KR101748949B9 (ko) | 반도체 메모리 소자 및 이의 제조 방법 | |
HK1252326A1 (zh) | 半導體器件及其製造方法 | |
SG10202006562UA (en) | Three-dimensional semiconductor devices and methods of fabricating the same | |
SG10202007985RA (en) | Semiconductor memory device and a method of fabricating the same | |
SG11202100905XA (en) | Semiconductor package and method of forming the same | |
SG10201905840VA (en) | Semiconductor device and manufacturing method thereof | |
SG10201909519PA (en) | Semiconductor memory device and manufacturing method thereof | |
SG11202012288PA (en) | Semiconductor device and method of manufacturing same | |
SG10202003748WA (en) | Semiconductor devices and methods of operating the same | |
SG10202003386QA (en) | Semiconductor Memory Devices And Methods Of Operating Semiconductor Memory Devices | |
GB201809897D0 (en) | Photovoltaic devices and methods of manufacturing photovoltaic devices | |
SG10201909074TA (en) | Method Of Fabricating Semiconductor Package And Semiconductor Package |