KR101748949B9 - 반도체 메모리 소자 및 이의 제조 방법 - Google Patents

반도체 메모리 소자 및 이의 제조 방법

Info

Publication number
KR101748949B9
KR101748949B9 KR1020150132080A KR20150132080A KR101748949B9 KR 101748949 B9 KR101748949 B9 KR 101748949B9 KR 1020150132080 A KR1020150132080 A KR 1020150132080A KR 20150132080 A KR20150132080 A KR 20150132080A KR 101748949 B9 KR101748949 B9 KR 101748949B9
Authority
KR
South Korea
Prior art keywords
fabricating
same
memory device
semiconductor memory
semiconductor
Prior art date
Application number
KR1020150132080A
Other languages
English (en)
Other versions
KR20170036838A (ko
KR101748949B1 (ko
Inventor
황철성
Original Assignee
서울대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울대학교산학협력단 filed Critical 서울대학교산학협력단
Priority to KR1020150132080A priority Critical patent/KR101748949B1/ko
Priority to US15/268,602 priority patent/US10886276B2/en
Publication of KR20170036838A publication Critical patent/KR20170036838A/ko
Application granted granted Critical
Publication of KR101748949B1 publication Critical patent/KR101748949B1/ko
Publication of KR101748949B9 publication Critical patent/KR101748949B9/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
KR1020150132080A 2015-09-18 2015-09-18 반도체 메모리 소자 및 이의 제조 방법 KR101748949B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020150132080A KR101748949B1 (ko) 2015-09-18 2015-09-18 반도체 메모리 소자 및 이의 제조 방법
US15/268,602 US10886276B2 (en) 2015-09-18 2016-09-18 Semiconductor memory device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150132080A KR101748949B1 (ko) 2015-09-18 2015-09-18 반도체 메모리 소자 및 이의 제조 방법

Publications (3)

Publication Number Publication Date
KR20170036838A KR20170036838A (ko) 2017-04-03
KR101748949B1 KR101748949B1 (ko) 2017-06-21
KR101748949B9 true KR101748949B9 (ko) 2022-09-06

Family

ID=58283215

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150132080A KR101748949B1 (ko) 2015-09-18 2015-09-18 반도체 메모리 소자 및 이의 제조 방법

Country Status (2)

Country Link
US (1) US10886276B2 (ko)
KR (1) KR101748949B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106328376A (zh) * 2015-07-03 2017-01-11 华硕电脑股份有限公司 电容器的制造方法
WO2019171470A1 (ja) * 2018-03-06 2019-09-12 株式会社 東芝 コンデンサ及びその製造方法
CN114078777A (zh) * 2020-08-13 2022-02-22 长鑫存储技术有限公司 半导体结构的形成方法及半导体结构
US11974427B2 (en) 2020-09-09 2024-04-30 Changxin Memory Technologies, Inc. Manufacturing method of a memory and a memory
CN114242659A (zh) * 2020-09-09 2022-03-25 长鑫存储技术有限公司 存储器的制造方法和存储器
US11856758B2 (en) 2020-09-24 2023-12-26 Changxin Memory Technologies, Inc. Method for manufacturing memory and same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1070252A (ja) * 1996-08-27 1998-03-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5898982A (en) * 1997-05-30 1999-05-04 Luminous Intent, Inc. Thin film capacitors
JP2000049306A (ja) * 1998-07-29 2000-02-18 Hitachi Ltd 半導体装置およびその製造方法
US6395600B1 (en) * 1999-09-02 2002-05-28 Micron Technology, Inc. Method of forming a contact structure and a container capacitor structure
TW519738B (en) * 2001-12-05 2003-02-01 Winbond Electronics Corp Extended type capacitor manufacturing method and device of memory
US6593185B1 (en) * 2002-05-17 2003-07-15 United Microelectronics Corp. Method of forming embedded capacitor structure applied to logic integrated circuit
US6914286B2 (en) * 2002-06-27 2005-07-05 Samsung Electronics Co., Ltd. Semiconductor memory devices using sidewall spacers
US7268383B2 (en) * 2003-02-20 2007-09-11 Infineon Technologies Ag Capacitor and method of manufacturing a capacitor
US7459362B2 (en) * 2005-06-27 2008-12-02 Micron Technology, Inc. Methods of forming DRAM arrays
TW201110167A (en) * 2009-09-04 2011-03-16 Novatek Microelectronics Corp Metal-oxide-metal capacitor having low parasitic capacitor
US8502340B2 (en) * 2010-12-09 2013-08-06 Tessera, Inc. High density three-dimensional integrated capacitors
US8742541B2 (en) * 2010-12-09 2014-06-03 Tessera, Inc. High density three-dimensional integrated capacitors
US9893163B2 (en) 2011-11-04 2018-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. 3D capacitor and method of manufacturing same
US20140167220A1 (en) 2012-12-14 2014-06-19 Spansion Llc Three dimensional capacitor
US20160055976A1 (en) * 2014-08-25 2016-02-25 Qualcomm Incorporated Package substrates including embedded capacitors

Also Published As

Publication number Publication date
US10886276B2 (en) 2021-01-05
KR20170036838A (ko) 2017-04-03
US20170084613A1 (en) 2017-03-23
KR101748949B1 (ko) 2017-06-21

Similar Documents

Publication Publication Date Title
TWI563546B (en) Semiconductor device and methods of forming the same
TWI563643B (en) Semiconductor structure and manufacturing method thereof
TWI562209B (en) Semiconductor device and method for manufacturing the same
SG10201700013VA (en) Semiconductor memory device and method for manufacturing same
SG10201912585TA (en) Semiconductor device and method for manufacturing the same
EP3204966A4 (en) Semiconductor device and method of manufacturing the same
SG10201505824YA (en) Semiconductor device and method of manufacturing the same
SG10201608814YA (en) Semiconductor device and method for manufacturing the semiconductor device
HK1245999A1 (zh) 半導體器件及半導體器件的製造方法
EP3279925A4 (en) Semiconductor device and manufacturing method thereof
TWI562323B (en) Semiconductor device package and method of manufacturing the same
SG10201912041UA (en) Memory device and method of forming the same
HK1252326A1 (zh) 半導體器件及其製造方法
HK1216358A1 (zh) 半導體裝置以及半導體裝置的製造方法
EP3093885A4 (en) Semiconductor device and semiconductor device manufacturing method
TWI563624B (en) Semiconductor device structure and method of fabricating the same
KR102376993B1 (ko) 반도체 장치 및 이의 제조 방법
KR101748949B9 (ko) 반도체 메모리 소자 및 이의 제조 방법
GB2556255B (en) Semiconductor device and semiconductor device manufacturing method
GB2573215B (en) Semiconductor manufacturing method and semiconductor manufacturing device
HK1251718A1 (zh) 半導體裝置及其製造方法
TWI563604B (en) Semiconductor device and fabricating method thereof
TWI563665B (en) Semiconductor device and method of manufacturing the same
GB201620826D0 (en) Semiconductor device and fabrication method
HK1246002A1 (zh) 半導體器件及其製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
G170 Re-publication after modification of scope of protection [patent]