SG10201909191UA - Electronic device and method for fabricating the same - Google Patents
Electronic device and method for fabricating the sameInfo
- Publication number
- SG10201909191UA SG10201909191UA SG10201909191UA SG10201909191UA SG10201909191UA SG 10201909191U A SG10201909191U A SG 10201909191UA SG 10201909191U A SG10201909191U A SG 10201909191UA SG 10201909191U A SG10201909191U A SG 10201909191UA SG 10201909191U A SG10201909191U A SG 10201909191UA
- Authority
- SG
- Singapore
- Prior art keywords
- fabricating
- same
- electronic device
- electronic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8616—Thermal insulation means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190025229A KR20200106681A (ko) | 2019-03-05 | 2019-03-05 | 전자 장치 및 그 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201909191UA true SG10201909191UA (en) | 2020-10-29 |
Family
ID=72334712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201909191UA SG10201909191UA (en) | 2019-03-05 | 2019-10-01 | Electronic device and method for fabricating the same |
Country Status (4)
Country | Link |
---|---|
US (2) | US11362273B2 (zh) |
KR (1) | KR20200106681A (zh) |
CN (1) | CN111668251B (zh) |
SG (1) | SG10201909191UA (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200106681A (ko) * | 2019-03-05 | 2020-09-15 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
KR102182293B1 (ko) * | 2019-03-11 | 2020-11-24 | 현대모비스 주식회사 | Mimo 시스템에서 도래각 추정 장치 및 방법 |
Family Cites Families (45)
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US7045849B2 (en) * | 2003-05-21 | 2006-05-16 | Sandisk Corporation | Use of voids between elements in semiconductor structures for isolation |
CN100444400C (zh) * | 2004-01-10 | 2008-12-17 | HVVi半导体股份有限公司 | 功率半导体器件及其方法 |
JP5175525B2 (ja) * | 2007-11-14 | 2013-04-03 | 株式会社東芝 | 不揮発性半導体記憶装置 |
TWI413121B (zh) * | 2008-02-29 | 2013-10-21 | Toshiba Kk | Semiconductor memory device |
US7754522B2 (en) * | 2008-08-06 | 2010-07-13 | Micron Technology, Inc. | Phase change memory structures and methods |
JP5342189B2 (ja) * | 2008-08-06 | 2013-11-13 | 株式会社日立製作所 | 不揮発性記憶装置及びその製造方法 |
JP5322533B2 (ja) * | 2008-08-13 | 2013-10-23 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
JP2010225741A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
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KR20200106681A (ko) * | 2019-03-05 | 2020-09-15 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
KR20210111515A (ko) * | 2020-03-03 | 2021-09-13 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
-
2019
- 2019-03-05 KR KR1020190025229A patent/KR20200106681A/ko unknown
- 2019-10-01 SG SG10201909191UA patent/SG10201909191UA/en unknown
- 2019-10-22 US US16/660,290 patent/US11362273B2/en active Active
- 2019-10-24 CN CN201911017064.1A patent/CN111668251B/zh active Active
-
2022
- 2022-05-13 US US17/744,436 patent/US11963467B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20220278275A1 (en) | 2022-09-01 |
US11963467B2 (en) | 2024-04-16 |
CN111668251A (zh) | 2020-09-15 |
CN111668251B (zh) | 2024-02-13 |
KR20200106681A (ko) | 2020-09-15 |
US20200287131A1 (en) | 2020-09-10 |
US11362273B2 (en) | 2022-06-14 |
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