SG10201903002XA - Photoresist stripper - Google Patents
Photoresist stripperInfo
- Publication number
- SG10201903002XA SG10201903002XA SG10201903002XA SG10201903002XA SG 10201903002X A SG10201903002X A SG 10201903002XA SG 10201903002X A SG10201903002X A SG 10201903002XA SG 10201903002X A SG10201903002X A SG 10201903002XA
- Authority
- SG
- Singapore
- Prior art keywords
- stripper
- solutions
- formulations containing
- potassium hydroxide
- photoresist stripper
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 6
- 238000009472 formulation Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical group OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 229910000027 potassium carbonate Inorganic materials 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3227—Ethers thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Epoxy Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862656843P | 2018-04-12 | 2018-04-12 | |
| US16/365,506 US11460778B2 (en) | 2018-04-12 | 2019-03-26 | Photoresist stripper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201903002XA true SG10201903002XA (en) | 2019-11-28 |
Family
ID=66105228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201903002X SG10201903002XA (en) | 2018-04-12 | 2019-04-03 | Photoresist stripper |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11460778B2 (zh) |
| EP (1) | EP3553811B1 (zh) |
| JP (1) | JP6878490B2 (zh) |
| KR (1) | KR102285001B1 (zh) |
| CN (1) | CN110376854B (zh) |
| IL (1) | IL265811B2 (zh) |
| SG (1) | SG10201903002XA (zh) |
| TW (1) | TWI726300B (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11168288B2 (en) * | 2018-02-14 | 2021-11-09 | Merck Patent Gmbh | Photoresist remover compositions |
| US11460778B2 (en) * | 2018-04-12 | 2022-10-04 | Versum Materials Us, Llc | Photoresist stripper |
| US20220333044A1 (en) * | 2019-09-30 | 2022-10-20 | Versum Materials Us, Llc | Photoresist Remover |
| CN111334115A (zh) * | 2020-03-04 | 2020-06-26 | 博罗县东明化工有限公司 | 脱漆剂及其制备方法与脱漆方法 |
| US11378886B2 (en) * | 2020-09-29 | 2022-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for removing resist layer, and method of manufacturing semiconductor |
| WO2022232751A1 (en) * | 2021-04-30 | 2022-11-03 | Versum Materials Us, Llc | Compositions for removing a photoresist from a substrate and uses thereof |
| KR20220150134A (ko) * | 2021-05-03 | 2022-11-10 | 삼성전자주식회사 | 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법 |
| CN113861747B (zh) * | 2021-08-31 | 2023-04-07 | 广东东明新材科技有限公司 | 一种脱漆剂及其制备方法 |
| TWI814652B (zh) * | 2022-11-28 | 2023-09-01 | 南亞塑膠工業股份有限公司 | 去膜液 |
| CN117872693B (zh) * | 2024-03-13 | 2024-07-12 | 深圳市松柏科工股份有限公司 | 正胶剥离液、正胶剥离液的制备方法及其应用 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US592197A (en) * | 1897-10-19 | Fluid-pressure regulator | ||
| US3269861A (en) * | 1963-06-21 | 1966-08-30 | Day Company | Method for electroless copper plating |
| US3356694A (en) * | 1964-08-20 | 1967-12-05 | Syntex Corp | 3-keto-4-methylene derivatives of the androstane and pregnane series and process therefor |
| ES427394A1 (es) * | 1973-06-18 | 1977-02-01 | Oxy Metal Industries Corp | Mejoras introducidas en un metodo de decapado de depositos de niquel acumulados en los dispositivos de metalizado y si-milares. |
| US5415811A (en) * | 1991-04-09 | 1995-05-16 | E And R Investments | Cleaning composition and method for utilizing same |
| US5962197A (en) * | 1998-03-27 | 1999-10-05 | Analyze Inc. | Alkaline organic photoresist stripper |
| US6471728B2 (en) * | 1998-05-15 | 2002-10-29 | Ecolab Incorporated | Removal of blood stains |
| DE69941088D1 (de) * | 1998-05-18 | 2009-08-20 | Mallinckrodt Baker Inc | Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate |
| KR100544889B1 (ko) | 2003-05-15 | 2006-01-24 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
| TWI315030B (en) * | 2003-06-26 | 2009-09-21 | Dongwoo Fine Chem Co Ltd | Photoresist stripper composition, and exfoliation method of a photoresist using it |
| US8163633B2 (en) * | 2004-10-07 | 2012-04-24 | Merck Patent Gmbh | Light-emitting nanoparticles and method of making same |
| US20060094613A1 (en) * | 2004-10-29 | 2006-05-04 | Lee Wai M | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| KR100842853B1 (ko) | 2006-09-27 | 2008-07-02 | 주식회사 대원에프엔씨 | 포토레지스트 및 열경화된 오버코트 제거용 수계 박리액조성물 |
| US7655608B2 (en) * | 2007-08-03 | 2010-02-02 | Dynaloy, Llc | Reduced metal etch rates using stripper solutions containing a copper salt |
| KR101392629B1 (ko) * | 2007-10-11 | 2014-05-07 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법 |
| WO2009058278A1 (en) * | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc | Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions |
| KR101579846B1 (ko) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
| CN102478768A (zh) | 2010-11-26 | 2012-05-30 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗液 |
| CN102540774A (zh) | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗剂 |
| US8987181B2 (en) | 2011-11-08 | 2015-03-24 | Dynaloy, Llc | Photoresist and post etch residue cleaning solution |
| CN103389627A (zh) | 2012-05-11 | 2013-11-13 | 安集微电子科技(上海)有限公司 | 一种光刻胶清洗液 |
| WO2014002151A1 (ja) * | 2012-06-26 | 2014-01-03 | 野村マイクロ・サイエンス株式会社 | レジスト剥離剤 |
| US20140100151A1 (en) * | 2012-10-08 | 2014-04-10 | Air Products And Chemicals Inc. | Stripping and Cleaning Compositions for Removal of Thick Film Resist |
| CN103713476B (zh) * | 2012-10-08 | 2017-12-12 | 弗萨姆材料美国有限责任公司 | 用于除去厚膜抗蚀剂的剥离和清除组合物 |
| US9158202B2 (en) * | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
| JP6277511B2 (ja) | 2013-10-18 | 2018-02-14 | パナソニックＩｐマネジメント株式会社 | レジスト剥離液 |
| JP6171087B2 (ja) * | 2014-04-07 | 2017-07-26 | 旭化成株式会社 | 光学基材及びその製造方法、並びに、積層体、レジスト剥離液 |
| US10073351B2 (en) * | 2014-12-23 | 2018-09-11 | Versum Materials Us, Llc | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation |
| US10072237B2 (en) * | 2015-08-05 | 2018-09-11 | Versum Materials Us, Llc | Photoresist cleaning composition used in photolithography and a method for treating substrate therewith |
| US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
| US11353794B2 (en) * | 2017-12-22 | 2022-06-07 | Versum Materials Us, Llc | Photoresist stripper |
| US10948826B2 (en) * | 2018-03-07 | 2021-03-16 | Versum Materials Us, Llc | Photoresist stripper |
| US11460778B2 (en) * | 2018-04-12 | 2022-10-04 | Versum Materials Us, Llc | Photoresist stripper |
-
2019
- 2019-03-26 US US16/365,506 patent/US11460778B2/en active Active
- 2019-04-03 IL IL265811A patent/IL265811B2/en unknown
- 2019-04-03 SG SG10201903002X patent/SG10201903002XA/en unknown
- 2019-04-08 TW TW108112182A patent/TWI726300B/zh active
- 2019-04-11 EP EP19168714.4A patent/EP3553811B1/en active Active
- 2019-04-11 JP JP2019075420A patent/JP6878490B2/ja active Active
- 2019-04-12 KR KR1020190043130A patent/KR102285001B1/ko active IP Right Grant
- 2019-04-12 CN CN201910295979.2A patent/CN110376854B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US11460778B2 (en) | 2022-10-04 |
| EP3553811A1 (en) | 2019-10-16 |
| JP6878490B2 (ja) | 2021-05-26 |
| US20190317409A1 (en) | 2019-10-17 |
| IL265811A (en) | 2019-05-30 |
| CN110376854B (zh) | 2023-06-23 |
| CN110376854A (zh) | 2019-10-25 |
| KR20190119544A (ko) | 2019-10-22 |
| IL265811B (en) | 2022-10-01 |
| KR102285001B1 (ko) | 2021-08-04 |
| IL265811B2 (en) | 2023-02-01 |
| TW201943850A (zh) | 2019-11-16 |
| TWI726300B (zh) | 2021-05-01 |
| JP2019185046A (ja) | 2019-10-24 |
| EP3553811B1 (en) | 2022-03-09 |
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