SG10201607459WA - Substrate pretreatment for reducing fill time in nanoimprint lithography - Google Patents

Substrate pretreatment for reducing fill time in nanoimprint lithography

Info

Publication number
SG10201607459WA
SG10201607459WA SG10201607459WA SG10201607459WA SG10201607459WA SG 10201607459W A SG10201607459W A SG 10201607459WA SG 10201607459W A SG10201607459W A SG 10201607459WA SG 10201607459W A SG10201607459W A SG 10201607459WA SG 10201607459W A SG10201607459W A SG 10201607459WA
Authority
SG
Singapore
Prior art keywords
nanoimprint lithography
fill time
substrate pretreatment
reducing fill
reducing
Prior art date
Application number
SG10201607459WA
Other languages
English (en)
Inventor
Khusnatdinov Niyaz
Brian Stachowiak Timothy
Liu Weijun
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/004,679 external-priority patent/US20170068159A1/en
Priority claimed from US15/195,789 external-priority patent/US20170066208A1/en
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG10201607459WA publication Critical patent/SG10201607459WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Polymerisation Methods In General (AREA)
SG10201607459WA 2015-09-08 2016-09-07 Substrate pretreatment for reducing fill time in nanoimprint lithography SG10201607459WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562215316P 2015-09-08 2015-09-08
US15/004,679 US20170068159A1 (en) 2015-09-08 2016-01-22 Substrate pretreatment for reducing fill time in nanoimprint lithography
US15/195,789 US20170066208A1 (en) 2015-09-08 2016-06-28 Substrate pretreatment for reducing fill time in nanoimprint lithography

Publications (1)

Publication Number Publication Date
SG10201607459WA true SG10201607459WA (en) 2017-04-27

Family

ID=58317450

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201607459WA SG10201607459WA (en) 2015-09-08 2016-09-07 Substrate pretreatment for reducing fill time in nanoimprint lithography
SG10202102937RA SG10202102937RA (en) 2015-09-08 2016-09-07 Substrate pretreatment for reducing fill time in nanoimprint lithography

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202102937RA SG10202102937RA (en) 2015-09-08 2016-09-07 Substrate pretreatment for reducing fill time in nanoimprint lithography

Country Status (5)

Country Link
JP (2) JP6141500B2 (https=)
KR (2) KR102115280B1 (https=)
CN (2) CN106842835B (https=)
SG (2) SG10201607459WA (https=)
TW (1) TWI708118B (https=)

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JP6982623B2 (ja) * 2017-09-26 2021-12-17 富士フイルム株式会社 インプリント用下層膜形成用組成物、キット、インプリント用硬化性組成物、積層体、積層体の製造方法、硬化物パターンの製造方法および回路基板の製造方法
JP6754344B2 (ja) * 2017-09-26 2020-09-09 富士フイルム株式会社 インプリント用下層膜形成用組成物、キット、積層体、積層体の製造方法、硬化物パターンの製造方法、回路基板の製造方法
JP7034696B2 (ja) 2017-12-14 2022-03-14 キヤノン株式会社 硬化物パターンの製造方法、加工基板の製造方法、回路基板の製造方法、電子部品の製造方法、およびインプリントモールドの製造方法
TWI783115B (zh) 2018-02-14 2022-11-11 日商富士軟片股份有限公司 試劑盒、壓印用下層膜形成組成物、圖案形成方法、半導體器件的製造方法
JPWO2020059603A1 (ja) * 2018-09-18 2021-09-16 富士フイルム株式会社 インプリント用積層体、インプリント用積層体の製造方法、パターン形成方法およびキット
JP7096898B2 (ja) 2018-09-28 2022-07-06 富士フイルム株式会社 インプリント用下層膜形成用組成物、インプリント用下層膜形成用組成物の製造方法、パターン製造方法、半導体素子の製造方法、硬化物およびキット
US10780682B2 (en) * 2018-12-20 2020-09-22 Canon Kabushiki Kaisha Liquid adhesion composition, multi-layer structure and method of making said structure
US20200308320A1 (en) * 2019-03-26 2020-10-01 Canon Kabushiki Kaisha Curable composition comprising dual-functional photoinitiator
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Also Published As

Publication number Publication date
KR102466726B1 (ko) 2022-11-15
JP2017152705A (ja) 2017-08-31
JP6141500B2 (ja) 2017-06-07
CN111708260A (zh) 2020-09-25
KR102115280B1 (ko) 2020-05-26
CN106842835A (zh) 2017-06-13
JP6723947B2 (ja) 2020-07-15
TW201723649A (zh) 2017-07-01
SG10202102937RA (en) 2021-04-29
JP2017055108A (ja) 2017-03-16
KR20170030051A (ko) 2017-03-16
TWI708118B (zh) 2020-10-21
CN106842835B (zh) 2020-12-25
KR20200058357A (ko) 2020-05-27
CN111708260B (zh) 2023-11-10

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