SG10201510078QA - Hardware and process for film uniformity improvement - Google Patents

Hardware and process for film uniformity improvement

Info

Publication number
SG10201510078QA
SG10201510078QA SG10201510078QA SG10201510078QA SG10201510078QA SG 10201510078Q A SG10201510078Q A SG 10201510078QA SG 10201510078Q A SG10201510078Q A SG 10201510078QA SG 10201510078Q A SG10201510078Q A SG 10201510078QA SG 10201510078Q A SG10201510078Q A SG 10201510078QA
Authority
SG
Singapore
Prior art keywords
hardware
film uniformity
uniformity improvement
improvement
film
Prior art date
Application number
SG10201510078QA
Other languages
English (en)
Inventor
Purushottam Kumar
Hu Kang
Adrien Lavoie
Yi Chung Chiu
Frank L Pasquale
Jun Qian
Chloe Baldasseroni
Shankar Swaminathan
Karl F Leeser
David Charles Smith
Wei-Chih Lai
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201510078QA publication Critical patent/SG10201510078QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
SG10201510078QA 2014-12-19 2015-12-08 Hardware and process for film uniformity improvement SG10201510078QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/578,166 US10100407B2 (en) 2014-12-19 2014-12-19 Hardware and process for film uniformity improvement

Publications (1)

Publication Number Publication Date
SG10201510078QA true SG10201510078QA (en) 2016-07-28

Family

ID=56128755

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201510078QA SG10201510078QA (en) 2014-12-19 2015-12-08 Hardware and process for film uniformity improvement

Country Status (6)

Country Link
US (2) US10100407B2 (enExample)
JP (1) JP6789627B2 (enExample)
KR (1) KR102556145B1 (enExample)
CN (1) CN105714272B (enExample)
SG (1) SG10201510078QA (enExample)
TW (1) TW201634737A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10100407B2 (en) 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
US9698042B1 (en) 2016-07-22 2017-07-04 Lam Research Corporation Wafer centering in pocket to improve azimuthal thickness uniformity at wafer edge
JP6902991B2 (ja) * 2017-12-19 2021-07-14 株式会社日立ハイテク プラズマ処理装置
CN111670265A (zh) 2018-01-31 2020-09-15 朗姆研究公司 用于多前体的歧管阀
CN110643975B (zh) * 2018-06-27 2021-09-28 东北大学 一种金属有机化学源液体的蒸发输运装置
US10720526B2 (en) 2018-06-29 2020-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stress modulation for dielectric layers
KR102619482B1 (ko) * 2019-10-25 2024-01-02 에이에스엠 아이피 홀딩 비.브이. 막 증착 공정에서의 정상 펄스 프로파일의 변형
KR102560323B1 (ko) 2020-04-03 2023-07-28 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
KR102521388B1 (ko) 2020-04-21 2023-04-14 주식회사 히타치하이테크 플라스마 처리 장치
JP7504004B2 (ja) * 2020-11-13 2024-06-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US11487304B2 (en) * 2021-01-08 2022-11-01 Applied Materials, Inc. Process fluid path switching in recipe operations
TW202309974A (zh) * 2021-05-21 2023-03-01 美商蘭姆研究公司 高深寬比3d nand架構中的鎢字元線填充
KR20240093755A (ko) * 2021-10-19 2024-06-24 램 리써치 코포레이션 반도체 프로세싱을 위한 밸브 매니폴드
JP7498369B2 (ja) 2022-04-26 2024-06-11 株式会社日立ハイテク プラズマ処理方法

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5769950A (en) * 1985-07-23 1998-06-23 Canon Kabushiki Kaisha Device for forming deposited film
US5338389A (en) * 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
US5368685A (en) * 1992-03-24 1994-11-29 Hitachi, Ltd. Dry etching apparatus and method
JP3026704B2 (ja) * 1993-07-29 2000-03-27 富士通株式会社 マグネトロン発振出力制御装置及びプラズマ処理方法
JP3468859B2 (ja) * 1994-08-16 2003-11-17 富士通株式会社 気相処理装置及び気相処理方法
JP3360265B2 (ja) * 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US6287965B1 (en) * 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
KR100252049B1 (ko) * 1997-11-18 2000-04-15 윤종용 원자층 증착법에 의한 알루미늄층의 제조방법
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
JP2000306884A (ja) * 1999-04-22 2000-11-02 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
CN100371491C (zh) * 1999-08-17 2008-02-27 东京电子株式会社 脉冲等离子体处理方法及其设备
JP5016767B2 (ja) * 2000-03-07 2012-09-05 エーエスエム インターナショナル エヌ．ヴェー． 傾斜薄膜の形成方法
US7011710B2 (en) * 2000-04-10 2006-03-14 Applied Materials Inc. Concentration profile on demand gas delivery system (individual divert delivery system)
US7163197B2 (en) * 2000-09-26 2007-01-16 Shimadzu Corporation Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method
JP2002129337A (ja) * 2000-10-24 2002-05-09 Applied Materials Inc 気相堆積方法及び装置
KR100397889B1 (ko) * 2001-01-18 2003-09-19 삼성전자주식회사 개스공급장치의 잔류개스 제거장치
US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
US6960537B2 (en) * 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US6656282B2 (en) * 2001-10-11 2003-12-02 Moohan Co., Ltd. Atomic layer deposition apparatus and process using remote plasma
JP3891848B2 (ja) * 2002-01-17 2007-03-14 東京エレクトロン株式会社 処理装置および処理方法
JP2003303023A (ja) * 2002-02-07 2003-10-24 Tokyo Electron Ltd 処理装置及び処理装置の保守方法
KR100574150B1 (ko) * 2002-02-28 2006-04-25 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조방법
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
US7439191B2 (en) * 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6838114B2 (en) * 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
JP3967253B2 (ja) * 2002-11-08 2007-08-29 東京エレクトロン株式会社 多孔質絶縁膜の形成方法及び多孔質絶縁膜の形成装置
JP3574651B2 (ja) * 2002-12-05 2004-10-06 東京エレクトロン株式会社 成膜方法および成膜装置
US7344755B2 (en) * 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US6924223B2 (en) * 2003-09-30 2005-08-02 Tokyo Electron Limited Method of forming a metal layer using an intermittent precursor gas flow process
KR100591762B1 (ko) * 2004-01-19 2006-06-22 삼성전자주식회사 증착 장치 및 증착 방법
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US7273526B2 (en) * 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
JP2005322668A (ja) * 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法
KR101304395B1 (ko) * 2004-05-12 2013-09-10 어플라이드 머티어리얼스, 인코포레이티드 하프늄-함유 높은-ｋ 유전체 물질의 원자 층 증착을 위한 장치 및 방법
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
JP4502189B2 (ja) * 2004-06-02 2010-07-14 ルネサスエレクトロニクス株式会社 薄膜の形成方法および半導体装置の製造方法
US7740704B2 (en) * 2004-06-25 2010-06-22 Tokyo Electron Limited High rate atomic layer deposition apparatus and method of using
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20060128127A1 (en) * 2004-12-13 2006-06-15 Jung-Hun Seo Method of depositing a metal compound layer and apparatus for depositing a metal compound layer
US7674393B2 (en) * 2005-03-25 2010-03-09 Tokyo Electron Limited Etching method and apparatus
JP2007067119A (ja) * 2005-08-30 2007-03-15 Elpida Memory Inc 半導体製造装置
JP4943047B2 (ja) * 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
KR20080027009A (ko) * 2006-09-22 2008-03-26 에이에스엠지니텍코리아 주식회사 원자층 증착 장치 및 그를 이용한 다층막 증착 방법
US7794788B2 (en) * 2007-03-28 2010-09-14 Tokyo Electron Limited Method for pre-conditioning a precursor vaporization system for a vapor deposition process
JP2008244298A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd 金属膜の成膜方法、多層配線構造の形成方法、半導体装置の製造方法、成膜装置
US8235001B2 (en) * 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP5219562B2 (ja) * 2007-04-02 2013-06-26 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
US20090004877A1 (en) * 2007-06-28 2009-01-01 Hitachi Kokusai Electric Inc. Substrate processing apparatus and semiconductor device manufacturing method
WO2009117565A2 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus of a substrate etching system and process
JP4961381B2 (ja) * 2008-04-14 2012-06-27 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP2010267925A (ja) * 2009-05-18 2010-11-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP5520552B2 (ja) * 2009-09-11 2014-06-11 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
KR20120062915A (ko) * 2009-09-29 2012-06-14 도쿄엘렉트론가부시키가이샤 니켈막의 성막 방법
JP2011132568A (ja) * 2009-12-24 2011-07-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
US8741394B2 (en) * 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
JP5544343B2 (ja) * 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
JPWO2012073938A1 (ja) * 2010-11-29 2014-05-19 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
JP5236755B2 (ja) * 2011-01-14 2013-07-17 東京エレクトロン株式会社 成膜装置及び成膜方法
JP5723678B2 (ja) * 2011-05-31 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置及びそのガス供給方法
KR101248918B1 (ko) * 2011-06-03 2013-04-01 주성엔지니어링(주) 가스 공급 방법
JP6199292B2 (ja) * 2011-09-23 2017-09-20 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ活性化されるコンフォーマル誘電体膜
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system
JP5895712B2 (ja) * 2012-05-31 2016-03-30 東京エレクトロン株式会社 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10211310B2 (en) 2012-06-12 2019-02-19 Novellus Systems, Inc. Remote plasma based deposition of SiOC class of films
US20140030444A1 (en) * 2012-07-30 2014-01-30 Novellus Systems, Inc. High pressure, high power plasma activated conformal film deposition
JP6061545B2 (ja) * 2012-08-10 2017-01-18 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP6196833B2 (ja) * 2012-09-26 2017-09-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9371579B2 (en) 2013-10-24 2016-06-21 Lam Research Corporation Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films
JP5917477B2 (ja) * 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US9478408B2 (en) * 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
JP6359913B2 (ja) * 2014-08-12 2018-07-18 東京エレクトロン株式会社 処理装置
US20160056032A1 (en) * 2014-08-22 2016-02-25 Lam Research Corporation Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling
JP5840268B1 (ja) * 2014-08-25 2016-01-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
JP2016063091A (ja) * 2014-09-18 2016-04-25 株式会社日立国際電気 基板処理方法、基板処理装置およびプログラム
US10100407B2 (en) 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement

Also Published As

Publication number Publication date
US10526700B2 (en) 2020-01-07
US20160177443A1 (en) 2016-06-23
CN105714272A (zh) 2016-06-29
JP6789627B2 (ja) 2020-11-25
KR102556145B1 (ko) 2023-07-14
JP2016145412A (ja) 2016-08-12
KR20160075331A (ko) 2016-06-29
US20190040528A1 (en) 2019-02-07
US10100407B2 (en) 2018-10-16
TW201634737A (zh) 2016-10-01
CN105714272B (zh) 2018-11-13

Similar Documents

Publication Publication Date Title
SG10201510078QA (en) Hardware and process for film uniformity improvement
GB201516440D0 (en) Apparatus and process
EP3152153A4 (en) Advanced processing apparatus
GB201421609D0 (en) Display apparatus
GB2540948B (en) Apparatus with reduced hardware register set
GB201400428D0 (en) Provisioning apparatus and methods therefor
SG10201504707WA (en) Alkyl-alkoxysilacyclic compounds and methods for depositing films using same
GB201402772D0 (en) An apparatus and associated methods
SG10201800688PA (en) Method and apparatus for forming articles with non-uniform coatings
GB201419132D0 (en) Radiotherapy apparatus
IL240681A0 (en) A system for holding and arranging items
SG10201505187TA (en) Processing apparatus
SG10201504537YA (en) Processing apparatus
GB201417185D0 (en) Apparatus and methods
GB201419134D0 (en) Display apparatus
EP3237650A4 (en) Ald method and apparatus
EP3158556A4 (en) Methods and apparatus for cryptography
SG11201606347XA (en) Deposition apparatus
GB201404927D0 (en) An apparatus and associated methods
GB201409389D0 (en) An apparatus and associated methods
PL3200932T3 (pl) Proces szybkiego jednorodnego powlekania
ZA201602971B (en) Apparatus & process
SG11201605706YA (en) Stretching apparatus for stretching the back
SMT202200425T1 (it) Processo di umificazione rapida e biostabilizzazione
PL3212318T3 (pl) Urządzenie do powlekania i sposób