SG10201408200QA - Composition for titanium nitride hard mask and etch residue removal - Google Patents

Composition for titanium nitride hard mask and etch residue removal

Info

Publication number
SG10201408200QA
SG10201408200QA SG10201408200QA SG10201408200QA SG10201408200QA SG 10201408200Q A SG10201408200Q A SG 10201408200QA SG 10201408200Q A SG10201408200Q A SG 10201408200QA SG 10201408200Q A SG10201408200Q A SG 10201408200QA SG 10201408200Q A SG10201408200Q A SG 10201408200QA
Authority
SG
Singapore
Prior art keywords
composition
hard mask
titanium nitride
residue removal
etch residue
Prior art date
Application number
SG10201408200QA
Other languages
English (en)
Inventor
Jack Casteel William Jr
Inaoka Seiji
Bhaskara Rao Madhukar
Faye Ross Brenda
Lee Yi-Chia
Dar Liu Wen
Chen Tianniu
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201408200QA publication Critical patent/SG10201408200QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
SG10201408200QA 2013-12-20 2014-12-09 Composition for titanium nitride hard mask and etch residue removal SG10201408200QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361918943P 2013-12-20 2013-12-20
US14/547,864 US9472420B2 (en) 2013-12-20 2014-11-19 Composition for titanium nitride hard mask and etch residue removal

Publications (1)

Publication Number Publication Date
SG10201408200QA true SG10201408200QA (en) 2015-07-30

Family

ID=53399354

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201408200QA SG10201408200QA (en) 2013-12-20 2014-12-09 Composition for titanium nitride hard mask and etch residue removal

Country Status (8)

Country Link
US (1) US9472420B2 (he)
EP (1) EP2922086B1 (he)
JP (1) JP6027083B2 (he)
KR (1) KR101696711B1 (he)
CN (1) CN104730870B (he)
IL (1) IL236316B (he)
SG (1) SG10201408200QA (he)
TW (1) TWI554591B (he)

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JP6329909B2 (ja) 2011-12-28 2018-05-23 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
US9957469B2 (en) * 2014-07-14 2018-05-01 Versum Materials Us, Llc Copper corrosion inhibition system
US9222018B1 (en) * 2014-07-24 2015-12-29 Air Products And Chemicals, Inc. Titanium nitride hard mask and etch residue removal
EA201792172A1 (ru) * 2015-04-10 2018-05-31 Басф Се Способ ингибирования коррозии металлических поверхностей
US10072237B2 (en) * 2015-08-05 2018-09-11 Versum Materials Us, Llc Photoresist cleaning composition used in photolithography and a method for treating substrate therewith
EP3436621B1 (en) * 2016-03-29 2020-02-12 Technic France Solution and method for etching titanium based materials
KR102160019B1 (ko) * 2016-09-29 2020-09-28 후지필름 가부시키가이샤 처리액 및 적층체의 처리 방법
CN107678253A (zh) * 2017-09-26 2018-02-09 合肥新汇成微电子有限公司 一种用于半导体晶圆等离子蚀刻残留物的清洗液
US20190103282A1 (en) * 2017-09-29 2019-04-04 Versum Materials Us, Llc Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
CN109971565B (zh) * 2017-12-27 2021-10-22 安集微电子（上海）有限公司 一种含氟清洗液
KR102665340B1 (ko) * 2018-09-18 2024-05-14 삼성전자주식회사 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법
JPWO2021049330A1 (he) * 2019-09-11 2021-03-18
US20220243128A1 (en) * 2020-01-30 2022-08-04 Showa Denko K.K. Method for removing metal compound
CN113161234B (zh) * 2021-04-27 2023-02-17 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的应用

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US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6419554B2 (en) 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
TW200505975A (en) * 2003-04-18 2005-02-16 Ekc Technology Inc Aqueous fluoride compositions for cleaning semiconductor devices
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JP4522408B2 (ja) 2003-08-19 2010-08-11 マリンクロッド・ベイカー・インコーポレイテッド マイクロエレクトロニクス用のストリッピングおよび洗浄組成物
JP2005232559A (ja) 2004-02-23 2005-09-02 Meltex Inc チタン剥離液
CN101233601A (zh) * 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
ATE482303T1 (de) 2005-10-25 2010-10-15 Atotech Deutschland Gmbh Zusammensetzung und verfahren zur haftfähigkeitsverbesserung der polymerischen materialien auf kupfer- oder kupferlegierungsoberflächen
US8025811B2 (en) 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
TWI449784B (zh) * 2006-12-21 2014-08-21 Advanced Tech Materials 用以移除蝕刻後殘餘物之液體清洗劑
JP5364250B2 (ja) 2007-07-13 2013-12-11 東京応化工業株式会社 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
US8623236B2 (en) * 2007-07-13 2014-01-07 Tokyo Ohka Kogyo Co., Ltd. Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film
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JP6329909B2 (ja) 2011-12-28 2018-05-23 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
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Also Published As

Publication number Publication date
TWI554591B (zh) 2016-10-21
EP2922086B1 (en) 2019-05-08
KR20150073108A (ko) 2015-06-30
EP2922086A1 (en) 2015-09-23
JP2015122496A (ja) 2015-07-02
US20150175943A1 (en) 2015-06-25
CN104730870B (zh) 2020-09-08
IL236316A0 (he) 2015-03-31
KR101696711B1 (ko) 2017-01-16
JP6027083B2 (ja) 2016-11-16
CN104730870A (zh) 2015-06-24
US9472420B2 (en) 2016-10-18
TW201525107A (zh) 2015-07-01
IL236316B (he) 2020-10-29

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