SG10201408200QA - Composition for titanium nitride hard mask and etch residue removal - Google Patents
Composition for titanium nitride hard mask and etch residue removalInfo
- Publication number
- SG10201408200QA SG10201408200QA SG10201408200QA SG10201408200QA SG10201408200QA SG 10201408200Q A SG10201408200Q A SG 10201408200QA SG 10201408200Q A SG10201408200Q A SG 10201408200QA SG 10201408200Q A SG10201408200Q A SG 10201408200QA SG 10201408200Q A SG10201408200Q A SG 10201408200QA
- Authority
- SG
- Singapore
- Prior art keywords
- composition
- hard mask
- titanium nitride
- residue removal
- etch residue
- Prior art date
Links
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361918943P | 2013-12-20 | 2013-12-20 | |
US14/547,864 US9472420B2 (en) | 2013-12-20 | 2014-11-19 | Composition for titanium nitride hard mask and etch residue removal |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201408200QA true SG10201408200QA (en) | 2015-07-30 |
Family
ID=53399354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201408200QA SG10201408200QA (en) | 2013-12-20 | 2014-12-09 | Composition for titanium nitride hard mask and etch residue removal |
Country Status (8)
Country | Link |
---|---|
US (1) | US9472420B2 (en) |
EP (1) | EP2922086B1 (en) |
JP (1) | JP6027083B2 (en) |
KR (1) | KR101696711B1 (en) |
CN (1) | CN104730870B (en) |
IL (1) | IL236316B (en) |
SG (1) | SG10201408200QA (en) |
TW (1) | TWI554591B (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104145324B (en) * | 2011-12-28 | 2017-12-22 | 恩特格里斯公司 | Composition and method for selective etch titanium nitride |
US9957469B2 (en) * | 2014-07-14 | 2018-05-01 | Versum Materials Us, Llc | Copper corrosion inhibition system |
US9222018B1 (en) * | 2014-07-24 | 2015-12-29 | Air Products And Chemicals, Inc. | Titanium nitride hard mask and etch residue removal |
EP3280832A1 (en) * | 2015-04-10 | 2018-02-14 | Basf Se | Process for inhibiting the corrosion of metal surfaces |
US10072237B2 (en) * | 2015-08-05 | 2018-09-11 | Versum Materials Us, Llc | Photoresist cleaning composition used in photolithography and a method for treating substrate therewith |
EP3436621B1 (en) * | 2016-03-29 | 2020-02-12 | Technic France | Solution and method for etching titanium based materials |
WO2018061582A1 (en) * | 2016-09-29 | 2018-04-05 | 富士フイルム株式会社 | Treatment fluid and method for treating laminate |
CN107678253A (en) * | 2017-09-26 | 2018-02-09 | 合肥新汇成微电子有限公司 | A kind of cleaning fluid for semiconductor crystal wafer plasma etch residues |
US20190103282A1 (en) * | 2017-09-29 | 2019-04-04 | Versum Materials Us, Llc | Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device |
CN109971565B (en) * | 2017-12-27 | 2021-10-22 | 安集微电子(上海)有限公司 | Fluorine-containing cleaning solution |
KR102665340B1 (en) * | 2018-09-18 | 2024-05-14 | 삼성전자주식회사 | Etching composition and method for manufacturing semiconductor device using the same |
WO2021049330A1 (en) * | 2019-09-11 | 2021-03-18 | 富士フイルム株式会社 | Processing liquid, processing method |
IL294958A (en) * | 2020-01-30 | 2022-09-01 | Showa Denko Kk | Method for removing metal compound |
CN113568286A (en) * | 2020-04-28 | 2021-10-29 | 安集微电子科技(上海)股份有限公司 | Cleaning solution for removing etching residues |
CN113161234B (en) * | 2021-04-27 | 2023-02-17 | 上海新阳半导体材料股份有限公司 | Application of fluorine-containing cleaning liquid composition |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4376057A (en) | 1980-11-26 | 1983-03-08 | International Business Machines Corporation | Etchant composition and use thereof |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US6419554B2 (en) | 1999-06-24 | 2002-07-16 | Micron Technology, Inc. | Fixed abrasive chemical-mechanical planarization of titanium nitride |
US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
TW200505975A (en) * | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
TW200428512A (en) * | 2003-05-02 | 2004-12-16 | Ekc Technology Inc | Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing |
EP1664935B1 (en) | 2003-08-19 | 2007-10-17 | Mallinckrodt Baker, Inc. | Stripping and cleaning compositions for microelectronics |
JP2005232559A (en) | 2004-02-23 | 2005-09-02 | Meltex Inc | Titanium removing solution |
US20090212021A1 (en) | 2005-06-13 | 2009-08-27 | Advanced Technology Materials, Inc. | Compositions and methods for selective removal of metal or metal alloy after metal silicide formation |
EP1780309B8 (en) | 2005-10-25 | 2010-12-15 | ATOTECH Deutschland GmbH | Composition and method for improved adhesion of polymeric materials to copper or copper alloy surfaces |
US8025811B2 (en) * | 2006-03-29 | 2011-09-27 | Intel Corporation | Composition for etching a metal hard mask material in semiconductor processing |
SG177915A1 (en) | 2006-12-21 | 2012-02-28 | Advanced Tech Materials | Liquid cleaner for the removal of post-etch residues |
US8623236B2 (en) * | 2007-07-13 | 2014-01-07 | Tokyo Ohka Kogyo Co., Ltd. | Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film |
JP5364250B2 (en) | 2007-07-13 | 2013-12-11 | 東京応化工業株式会社 | Titanium nitride stripping solution and method for stripping titanium nitride coating |
WO2009064336A1 (en) | 2007-11-16 | 2009-05-22 | Ekc Technology, Inc. | Compositions for removal of metal hard mask etching residues from a semiconductor substrate |
MY158776A (en) | 2009-05-07 | 2016-11-15 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
KR101800803B1 (en) | 2009-12-24 | 2017-11-27 | 주식회사 동진쎄미켐 | Etchant and method for preparing electronic device |
JP2013533631A (en) | 2010-07-16 | 2013-08-22 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Aqueous cleaning agent to remove residues after etching |
TWI619800B (en) | 2010-10-06 | 2018-04-01 | 恩特葛瑞斯股份有限公司 | Composition and process for selectively etching metal nitrides |
US20130045908A1 (en) | 2011-08-15 | 2013-02-21 | Hua Cui | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
US9257270B2 (en) | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
KR102009250B1 (en) | 2011-09-09 | 2019-08-12 | 동우 화인켐 주식회사 | Method for manufacturing display device and an etching solution composition for metal layer containing copper/metal oxide layer |
CN104145324B (en) | 2011-12-28 | 2017-12-22 | 恩特格里斯公司 | Composition and method for selective etch titanium nitride |
KR20130084932A (en) | 2012-01-18 | 2013-07-26 | 삼성전자주식회사 | Method of manufacturing semiconductor device |
SG10202102525WA (en) | 2012-03-12 | 2021-04-29 | Entegris Inc | Methods for the selective removal of ashed spin-on glass |
CN103525599A (en) | 2013-09-23 | 2014-01-22 | 杨桂望 | Boiler scale remover |
US9222018B1 (en) * | 2014-07-24 | 2015-12-29 | Air Products And Chemicals, Inc. | Titanium nitride hard mask and etch residue removal |
-
2014
- 2014-11-19 US US14/547,864 patent/US9472420B2/en active Active
- 2014-12-09 SG SG10201408200QA patent/SG10201408200QA/en unknown
- 2014-12-15 TW TW103143735A patent/TWI554591B/en not_active IP Right Cessation
- 2014-12-16 EP EP14198123.3A patent/EP2922086B1/en not_active Not-in-force
- 2014-12-17 IL IL236316A patent/IL236316B/en active IP Right Grant
- 2014-12-18 KR KR1020140183441A patent/KR101696711B1/en active IP Right Grant
- 2014-12-19 JP JP2014257005A patent/JP6027083B2/en not_active Expired - Fee Related
- 2014-12-22 CN CN201410806917.0A patent/CN104730870B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20150073108A (en) | 2015-06-30 |
KR101696711B1 (en) | 2017-01-16 |
JP2015122496A (en) | 2015-07-02 |
US20150175943A1 (en) | 2015-06-25 |
EP2922086B1 (en) | 2019-05-08 |
EP2922086A1 (en) | 2015-09-23 |
JP6027083B2 (en) | 2016-11-16 |
IL236316B (en) | 2020-10-29 |
CN104730870B (en) | 2020-09-08 |
TWI554591B (en) | 2016-10-21 |
TW201525107A (en) | 2015-07-01 |
CN104730870A (en) | 2015-06-24 |
IL236316A0 (en) | 2015-03-31 |
US9472420B2 (en) | 2016-10-18 |
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