SG10201405260YA - Processing agent composition for semiconductor surface and method for processing semiconductor surface using same - Google Patents

Processing agent composition for semiconductor surface and method for processing semiconductor surface using same

Info

Publication number
SG10201405260YA
SG10201405260YA SG10201405260YA SG10201405260YA SG10201405260YA SG 10201405260Y A SG10201405260Y A SG 10201405260YA SG 10201405260Y A SG10201405260Y A SG 10201405260YA SG 10201405260Y A SG10201405260Y A SG 10201405260YA SG 10201405260Y A SG10201405260Y A SG 10201405260YA
Authority
SG
Singapore
Prior art keywords
semiconductor surface
processing
same
agent composition
processing agent
Prior art date
Application number
SG10201405260YA
Other languages
English (en)
Inventor
Hironori Mizuta
Takuhiro Kimura
Original Assignee
Wako Pure Chem Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chem Ind Ltd filed Critical Wako Pure Chem Ind Ltd
Publication of SG10201405260YA publication Critical patent/SG10201405260YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C11D2111/22—
SG10201405260YA 2009-09-02 2010-09-01 Processing agent composition for semiconductor surface and method for processing semiconductor surface using same SG10201405260YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009202260 2009-09-02

Publications (1)

Publication Number Publication Date
SG10201405260YA true SG10201405260YA (en) 2014-10-30

Family

ID=43649307

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012014940A SG178611A1 (en) 2009-09-02 2010-09-01 Processing agent composition for semiconductor surface and method for processing semiconductor surface using same
SG10201405260YA SG10201405260YA (en) 2009-09-02 2010-09-01 Processing agent composition for semiconductor surface and method for processing semiconductor surface using same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2012014940A SG178611A1 (en) 2009-09-02 2010-09-01 Processing agent composition for semiconductor surface and method for processing semiconductor surface using same

Country Status (9)

Country Link
US (1) US9034810B2 (ja)
EP (1) EP2475000B1 (ja)
JP (1) JP5652399B2 (ja)
KR (1) KR20120073228A (ja)
CN (1) CN102484057B (ja)
IL (1) IL218408A0 (ja)
SG (2) SG178611A1 (ja)
TW (1) TW201128328A (ja)
WO (1) WO2011027772A1 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5077594B2 (ja) * 2010-01-26 2012-11-21 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
CN102998915A (zh) * 2012-07-17 2013-03-27 张峰 正型光致抗蚀剂剥离剂组合物
CN103383529B (zh) * 2012-07-18 2015-12-02 张峰 正型光刻胶清除液组合物
CN103383530B (zh) * 2012-07-18 2015-12-02 张峰 正型光阻清洗剂组合物
CN103543620B (zh) * 2013-11-11 2016-07-06 深圳市星扬化工有限公司 一种印制电路板显影膜去除液
EP3104398B1 (en) 2013-12-06 2020-03-11 Fujifilm Electronic Materials USA, Inc. Cleaning formulation and method for removing residues on surfaces
WO2015152212A1 (ja) * 2014-03-31 2015-10-08 富士フイルム株式会社 除去液及び除去方法
KR102153745B1 (ko) 2014-04-16 2020-09-09 삼성전자주식회사 세정액 조성물 및 이를 이용한 반도체 소자의 세정 방법
EP3208659A1 (en) * 2014-10-14 2017-08-23 AZ Electronic Materials (Luxembourg) S.à.r.l. Composition for resist patterning and method for forming pattern using same
CN106298442B (zh) * 2015-05-25 2020-11-27 中芯国际集成电路制造(上海)有限公司 残留物的清除方法
CN106919011B (zh) * 2015-12-25 2021-12-17 安集微电子科技（上海）股份有限公司 一种富含水的羟胺剥离清洗液
JP6689991B2 (ja) * 2016-08-31 2020-04-28 富士フイルム株式会社 処理液、基板の洗浄方法、半導体デバイスの製造方法
US10597616B2 (en) 2016-12-29 2020-03-24 Toyota Ohka Kogyo Co., Ltd. Cleaning liquid and method for manufacturing the same
JP6965144B2 (ja) * 2016-12-29 2021-11-10 東京応化工業株式会社 洗浄液及びこれを製造する方法
US10597609B2 (en) 2016-12-29 2020-03-24 Tokyo Ohka Kogyo Co., Ltd. Cleaning liquid, anticorrosion agent, and method for manufacturing the same
JP6965143B2 (ja) 2016-12-29 2021-11-10 東京応化工業株式会社 洗浄液、防食剤、及びこれらを製造する方法
WO2019190653A1 (en) * 2018-03-28 2019-10-03 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions
JP7365427B2 (ja) * 2019-11-22 2023-10-19 富士フイルム株式会社 洗浄液、洗浄方法
JP7297948B2 (ja) * 2020-01-28 2023-06-26 富士フイルム株式会社 処理液、被処理物の処理方法
JP2022041077A (ja) 2020-08-31 2022-03-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN114014776B (zh) * 2021-12-09 2024-03-12 西安鸿钧睿泽新材料科技有限公司 一种具有低全球变暖潜值的化合物、制备方法及其应用

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3389166B2 (ja) * 1999-09-10 2003-03-24 日本電気株式会社 レジスト用剥離液組成物
JP3410403B2 (ja) * 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
JP2001100436A (ja) * 1999-09-28 2001-04-13 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
US6831048B2 (en) * 2000-04-26 2004-12-14 Daikin Industries, Ltd. Detergent composition
WO2003091376A1 (en) * 2002-04-24 2003-11-06 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
JP4443864B2 (ja) * 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
EP1536291A4 (en) * 2002-08-22 2008-08-06 Daikin Ind Ltd REMOVING SOLUTION
JP2004241414A (ja) 2003-02-03 2004-08-26 Sharp Corp 剥離洗浄装置
WO2005043245A2 (en) * 2003-10-29 2005-05-12 Mallinckrodt Baker Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
JP2005209953A (ja) * 2004-01-23 2005-08-04 Tokyo Ohka Kogyo Co Ltd 剥離洗浄液、該剥離洗浄液を用いた半導体基板洗浄方法および金属配線形成方法
JP4440689B2 (ja) * 2004-03-31 2010-03-24 東友ファインケム株式会社 レジスト剥離剤組成物
SG118380A1 (en) * 2004-06-15 2006-01-27 Air Prod & Chem Composition and method comprising same for removing residue from a substrate
US20060003910A1 (en) * 2004-06-15 2006-01-05 Hsu Jiun Y Composition and method comprising same for removing residue from a substrate
JP4456424B2 (ja) 2004-06-29 2010-04-28 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物
JP2006106616A (ja) 2004-10-08 2006-04-20 Tokyo Ohka Kogyo Co Ltd ホトレジスト除去用処理液および基板の処理方法
CN101242914A (zh) * 2005-06-16 2008-08-13 高级技术材料公司 用于除去硬化的光致抗蚀剂、蚀刻后残留物和/或底部抗反射涂层的稠密流体组合物
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
TW200729327A (en) 2005-11-18 2007-08-01 Mitsubishi Gas Chemical Co Method and apparatus for cleaning substrate
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
JP2009075285A (ja) * 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
US8062429B2 (en) * 2007-10-29 2011-11-22 Ekc Technology, Inc. Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
TWI460557B (zh) * 2008-03-07 2014-11-11 Wako Pure Chem Ind Ltd 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法

Also Published As

Publication number Publication date
EP2475000A1 (en) 2012-07-11
CN102484057B (zh) 2015-10-14
JPWO2011027772A1 (ja) 2013-02-04
EP2475000A4 (en) 2013-03-27
EP2475000B1 (en) 2015-07-01
IL218408A0 (en) 2012-04-30
US20120157368A1 (en) 2012-06-21
JP5652399B2 (ja) 2015-01-14
TW201128328A (en) 2011-08-16
KR20120073228A (ko) 2012-07-04
US9034810B2 (en) 2015-05-19
CN102484057A (zh) 2012-05-30
SG178611A1 (en) 2012-03-29
WO2011027772A1 (ja) 2011-03-10

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