SE9903213D0 - Dry etching process of compound semiconductor materials - Google Patents
Dry etching process of compound semiconductor materialsInfo
- Publication number
- SE9903213D0 SE9903213D0 SE9903213A SE9903213A SE9903213D0 SE 9903213 D0 SE9903213 D0 SE 9903213D0 SE 9903213 A SE9903213 A SE 9903213A SE 9903213 A SE9903213 A SE 9903213A SE 9903213 D0 SE9903213 D0 SE 9903213D0
- Authority
- SE
- Sweden
- Prior art keywords
- methyl
- substrate
- plasma
- etching
- radicals
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 238000001312 dry etching Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000004215 Carbon black (E152) Substances 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- 229930195733 hydrocarbon Natural products 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 abstract 2
- -1 methyl compound Chemical class 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9903213A SE9903213D0 (sv) | 1999-06-21 | 1999-09-10 | Dry etching process of compound semiconductor materials |
| DE60043300T DE60043300D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1999-06-21 | 2000-06-21 | |
| AT00940508T ATE448566T1 (de) | 1999-06-21 | 2000-06-21 | Verbesserungen von verfahren zum plasmaätzen |
| JP2001505049A JP4979167B2 (ja) | 1999-06-21 | 2000-06-21 | プラズマエッチング方法 |
| PCT/GB2000/002255 WO2000079578A1 (en) | 1999-06-21 | 2000-06-21 | Improvements relating to plasma etching |
| KR1020017016014A KR100731849B1 (ko) | 1999-06-21 | 2000-06-21 | 플라즈마를 이용한 기질 에칭 방법 |
| US10/018,809 US6933242B1 (en) | 1999-06-21 | 2000-06-21 | Plasma etching |
| EP00940508A EP1188180B1 (en) | 1999-06-21 | 2000-06-21 | Improvements relating to plasma etching |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9902344A SE9902344D0 (sv) | 1999-06-21 | 1999-06-21 | Dry etching process of III-V-semiconductor |
| SE9903213A SE9903213D0 (sv) | 1999-06-21 | 1999-09-10 | Dry etching process of compound semiconductor materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE9903213D0 true SE9903213D0 (sv) | 1999-09-10 |
Family
ID=26663600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9903213A SE9903213D0 (sv) | 1999-06-21 | 1999-09-10 | Dry etching process of compound semiconductor materials |
Country Status (8)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6820570B2 (en) | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
| KR100759808B1 (ko) | 2005-12-08 | 2007-09-20 | 한국전자통신연구원 | Ｉｉｉ－ｖ 족 반도체 다층구조의 식각 방법 및 이를이용한 수직공진형 표면방출 레이저 제조 방법 |
| US20080239428A1 (en) * | 2007-04-02 | 2008-10-02 | Inphase Technologies, Inc. | Non-ft plane angular filters |
| KR20120095411A (ko) * | 2009-11-09 | 2012-08-28 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 반도체 식각 방법 |
| JP6456400B2 (ja) | 2014-04-01 | 2019-01-23 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板を表面処理する方法及び装置 |
| TWI880237B (zh) * | 2015-06-05 | 2025-04-11 | 美商蘭姆研究公司 | GaN及其他Ⅲ-Ⅴ族材料之原子層蝕刻 |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| KR102733594B1 (ko) * | 2019-12-18 | 2024-11-25 | 주식회사 원익아이피에스 | 기판 처리 방법 |
| KR20230136016A (ko) | 2021-02-03 | 2023-09-26 | 램 리써치 코포레이션 | 원자 층 에칭의 에칭 선택도 제어 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07201820A (ja) * | 1993-12-28 | 1995-08-04 | Fujitsu Ltd | 水銀カドミウムテルル基板のエッチング方法 |
| US5527425A (en) | 1995-07-21 | 1996-06-18 | At&T Corp. | Method of making in-containing III/V semiconductor devices |
| JPH10303181A (ja) * | 1997-04-28 | 1998-11-13 | Mitsui Chem Inc | 乾式プロセスガス |
| JPH1116896A (ja) | 1997-06-27 | 1999-01-22 | Fujitsu Ltd | 化合物半導体装置の製造方法 |
-
1999
- 1999-09-10 SE SE9903213A patent/SE9903213D0/xx unknown
-
2000
- 2000-06-21 KR KR1020017016014A patent/KR100731849B1/ko not_active Expired - Fee Related
- 2000-06-21 EP EP00940508A patent/EP1188180B1/en not_active Expired - Lifetime
- 2000-06-21 AT AT00940508T patent/ATE448566T1/de not_active IP Right Cessation
- 2000-06-21 US US10/018,809 patent/US6933242B1/en not_active Expired - Lifetime
- 2000-06-21 DE DE60043300T patent/DE60043300D1/de not_active Expired - Lifetime
- 2000-06-21 JP JP2001505049A patent/JP4979167B2/ja not_active Expired - Lifetime
- 2000-06-21 WO PCT/GB2000/002255 patent/WO2000079578A1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| EP1188180B1 (en) | 2009-11-11 |
| ATE448566T1 (de) | 2009-11-15 |
| WO2000079578A1 (en) | 2000-12-28 |
| JP2003502860A (ja) | 2003-01-21 |
| EP1188180A1 (en) | 2002-03-20 |
| JP4979167B2 (ja) | 2012-07-18 |
| US6933242B1 (en) | 2005-08-23 |
| DE60043300D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2009-12-24 |
| KR100731849B1 (ko) | 2007-06-25 |
| KR20020041333A (ko) | 2002-06-01 |
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