JP4979167B2 - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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Publication number
JP4979167B2
JP4979167B2 JP2001505049A JP2001505049A JP4979167B2 JP 4979167 B2 JP4979167 B2 JP 4979167B2 JP 2001505049 A JP2001505049 A JP 2001505049A JP 2001505049 A JP2001505049 A JP 2001505049A JP 4979167 B2 JP4979167 B2 JP 4979167B2
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JP
Japan
Prior art keywords
etching
gas
plasma
substrate
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2001505049A
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English (en)
Japanese (ja)
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JP2003502860A (ja
Inventor
アナンド スリニヴァサン
カール−フレデリック カールストルム
グナール ランドグレン
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Surface Technology Systems Ltd
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Surface Technology Systems Ltd
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Publication date
Priority claimed from SE9902344A external-priority patent/SE9902344D0/xx
Application filed by Surface Technology Systems Ltd filed Critical Surface Technology Systems Ltd
Publication of JP2003502860A publication Critical patent/JP2003502860A/ja
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Publication of JP4979167B2 publication Critical patent/JP4979167B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP2001505049A 1999-06-21 2000-06-21 プラズマエッチング方法 Expired - Lifetime JP4979167B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
SE9902344-2 1999-06-21
SE9902344A SE9902344D0 (sv) 1999-06-21 1999-06-21 Dry etching process of III-V-semiconductor
SE9903213A SE9903213D0 (sv) 1999-06-21 1999-09-10 Dry etching process of compound semiconductor materials
SE9903213-8 1999-09-10
PCT/GB2000/002255 WO2000079578A1 (en) 1999-06-21 2000-06-21 Improvements relating to plasma etching

Publications (2)

Publication Number Publication Date
JP2003502860A JP2003502860A (ja) 2003-01-21
JP4979167B2 true JP4979167B2 (ja) 2012-07-18

Family

ID=26663600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001505049A Expired - Lifetime JP4979167B2 (ja) 1999-06-21 2000-06-21 プラズマエッチング方法

Country Status (8)

Country Link
US (1) US6933242B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP1188180B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP4979167B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100731849B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) ATE448566T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE60043300D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE9903213D0 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO2000079578A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
KR100759808B1 (ko) 2005-12-08 2007-09-20 한국전자통신연구원 Ｉｉｉ－ｖ 족 반도체 다층구조의 식각 방법 및 이를이용한 수직공진형 표면방출 레이저 제조 방법
US20080239428A1 (en) * 2007-04-02 2008-10-02 Inphase Technologies, Inc. Non-ft plane angular filters
US8765611B2 (en) * 2009-11-09 2014-07-01 3M Innovative Properties Company Etching process for semiconductors
CN106463342B (zh) * 2014-04-01 2020-04-03 Ev 集团 E·索尔纳有限责任公司 用于衬底表面处理的方法及装置
JP2017022368A (ja) * 2015-06-05 2017-01-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ＧａＮ及びその他のＩＩＩ−Ｖ材料の原子層エッチング
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
KR102733594B1 (ko) * 2019-12-18 2024-11-25 주식회사 원익아이피에스 기판 처리 방법
WO2022169509A1 (en) 2021-02-03 2022-08-11 Lam Research Corporation Etch selectivity control in atomic layer etching

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201820A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 水銀カドミウムテルル基板のエッチング方法
JPH10303181A (ja) * 1997-04-28 1998-11-13 Mitsui Chem Inc 乾式プロセスガス

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527425A (en) 1995-07-21 1996-06-18 At&T Corp. Method of making in-containing III/V semiconductor devices
JPH1116896A (ja) 1997-06-27 1999-01-22 Fujitsu Ltd 化合物半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201820A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 水銀カドミウムテルル基板のエッチング方法
JPH10303181A (ja) * 1997-04-28 1998-11-13 Mitsui Chem Inc 乾式プロセスガス

Also Published As

Publication number Publication date
SE9903213D0 (sv) 1999-09-10
EP1188180A1 (en) 2002-03-20
WO2000079578A1 (en) 2000-12-28
DE60043300D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2009-12-24
JP2003502860A (ja) 2003-01-21
KR100731849B1 (ko) 2007-06-25
US6933242B1 (en) 2005-08-23
EP1188180B1 (en) 2009-11-11
ATE448566T1 (de) 2009-11-15
KR20020041333A (ko) 2002-06-01

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