SE9500326D0 - Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD - Google Patents

Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD

Info

Publication number
SE9500326D0
SE9500326D0 SE9500326A SE9500326A SE9500326D0 SE 9500326 D0 SE9500326 D0 SE 9500326D0 SE 9500326 A SE9500326 A SE 9500326A SE 9500326 A SE9500326 A SE 9500326A SE 9500326 D0 SE9500326 D0 SE 9500326D0
Authority
SE
Sweden
Prior art keywords
cvd
epitaxial growth
susceptor
protecting
substrate
Prior art date
Application number
SE9500326A
Other languages
English (en)
Swedish (sv)
Inventor
Olle Kordina
Christer Hallin
Erik Janzen
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9500326A priority Critical patent/SE9500326D0/xx
Publication of SE9500326D0 publication Critical patent/SE9500326D0/xx
Priority to US08/421,879 priority patent/US5792257A/en
Priority to JP52345796A priority patent/JP4002604B2/ja
Priority to PCT/SE1996/000069 priority patent/WO1996023913A1/fr
Priority to EP96902528A priority patent/EP0807191B1/fr
Priority to DE69604383T priority patent/DE69604383T2/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
SE9500326A 1995-01-31 1995-01-31 Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD SE9500326D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9500326A SE9500326D0 (sv) 1995-01-31 1995-01-31 Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
US08/421,879 US5792257A (en) 1995-01-31 1995-04-14 Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
JP52345796A JP4002604B2 (ja) 1995-01-31 1996-01-24 Ｃｖｄによるエピタキシャル成長中にサセプターを保護する方法と装置
PCT/SE1996/000069 WO1996023913A1 (fr) 1995-01-31 1996-01-24 Procede et dispositif de protection du suscepteur au cours de la croissance epitaxiale par d.c.p.v. (depot chimique en phase vapeur)
EP96902528A EP0807191B1 (fr) 1995-01-31 1996-01-24 Procede et dispositif de protection du suscepteur au cours de la croissance epitaxiale par d.c.p.v. (depot chimique en phase vapeur)
DE69604383T DE69604383T2 (de) 1995-01-31 1996-01-24 Verfahren und vorrichtung zum abschirmen des susceptors während des epitaktischen wachsens bei cvd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9500326A SE9500326D0 (sv) 1995-01-31 1995-01-31 Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD

Publications (1)

Publication Number Publication Date
SE9500326D0 true SE9500326D0 (sv) 1995-01-31

Family

ID=20397015

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9500326A SE9500326D0 (sv) 1995-01-31 1995-01-31 Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD

Country Status (6)

Country Link
US (1) US5792257A (fr)
EP (1) EP0807191B1 (fr)
JP (1) JP4002604B2 (fr)
DE (1) DE69604383T2 (fr)
SE (1) SE9500326D0 (fr)
WO (1) WO1996023913A1 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989340A (en) * 1995-11-14 1999-11-23 Siemens Aktiengesellschaft Process and device for sublimation growing of silicon carbide monocrystals
SE9600705D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
SE9600704D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
JP4771591B2 (ja) * 1998-04-06 2011-09-14 クリー インコーポレイテッド 化学気相成長による物体のエピタキシアル成長方法及び装置
DE19934336A1 (de) * 1998-09-03 2000-03-09 Siemens Ag Vorrichtung zum Herstellen und Bearbeiten von Halbleitersubstraten
DE10043600B4 (de) * 2000-09-01 2013-12-05 Aixtron Se Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten
DE10055182A1 (de) * 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
JP5657949B2 (ja) * 2000-12-18 2015-01-21 東洋炭素株式会社 低窒素濃度黒鉛材料、及び、その保管方法
JP2006232669A (ja) * 2000-12-18 2006-09-07 Toyo Tanso Kk 低窒素濃度黒鉛材料、低窒素濃度炭素繊維強化炭素複合材料、低窒素濃度膨張黒鉛シート
US6569250B2 (en) 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
JP2003068669A (ja) * 2001-08-27 2003-03-07 Denso Corp 半導体基板の熱処理方法及び装置
US6896738B2 (en) 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
CN100507073C (zh) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 感受器系统
AU2002368439A1 (en) * 2002-12-10 2004-06-30 Etc Srl Susceptor system
US7118781B1 (en) * 2003-04-16 2006-10-10 Cree, Inc. Methods for controlling formation of deposits in a deposition system and deposition methods including the same
JP2005072468A (ja) * 2003-08-27 2005-03-17 Koyo Thermo System Kk 半導体ウエハの熱処理装置
DE602004031741D1 (de) * 2004-06-09 2011-04-21 E T C Epitaxial Technology Ct Srl Halterungssystem für behandlungsapparaturen
JP4433947B2 (ja) * 2004-09-02 2010-03-17 株式会社エピクエスト 高温用ｃｖｄ装置
DE102004062553A1 (de) * 2004-12-24 2006-07-06 Aixtron Ag CVD-Reaktor mit RF-geheizter Prozesskammer
JP2006303152A (ja) * 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd エピタキシャル成膜装置およびエピタキシャル成膜方法
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
JP5110790B2 (ja) * 2005-11-30 2012-12-26 光洋サーモシステム株式会社 熱処理装置
ITMI20061809A1 (it) * 2006-09-25 2008-03-26 E T C Srl Processo per realizzare un sustrato di carburo di silicio per applicazioni microelettroniche
US8226770B2 (en) * 2007-05-04 2012-07-24 Applied Materials, Inc. Susceptor with backside area of constant emissivity
JP6097681B2 (ja) 2013-12-24 2017-03-15 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造装置およびＳｉＣエピタキシャルウェハの製造方法
US10100409B2 (en) 2015-02-11 2018-10-16 United Technologies Corporation Isothermal warm wall CVD reactor

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JPS5434757A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Chemical vapor-phase growth method
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate
GB2162544B (en) * 1984-06-28 1987-11-18 Stc Plc Mass transport process for manufacturing semiconductor devices
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
JPS63186422A (ja) * 1987-01-28 1988-08-02 Tadahiro Omi ウエハサセプタ装置
US4846102A (en) * 1987-06-24 1989-07-11 Epsilon Technology, Inc. Reaction chambers for CVD systems
JPH0369113A (ja) * 1989-08-09 1991-03-25 Fujitsu Ltd 半導体製造装置
AU2250392A (en) * 1991-06-12 1993-01-12 Case Western Reserve University Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers
JP2576766B2 (ja) * 1993-07-08 1997-01-29 日本電気株式会社 半導体基板の製造方法

Also Published As

Publication number Publication date
DE69604383T2 (de) 2000-01-05
WO1996023913A1 (fr) 1996-08-08
DE69604383D1 (de) 1999-10-28
US5792257A (en) 1998-08-11
EP0807191B1 (fr) 1999-09-22
JP4002604B2 (ja) 2007-11-07
EP0807191A1 (fr) 1997-11-19
JPH10513146A (ja) 1998-12-15

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