DE602004031741D1 - Halterungssystem für behandlungsapparaturen - Google Patents

Halterungssystem für behandlungsapparaturen

Info

Publication number
DE602004031741D1
DE602004031741D1 DE602004031741T DE602004031741T DE602004031741D1 DE 602004031741 D1 DE602004031741 D1 DE 602004031741D1 DE 602004031741 T DE602004031741 T DE 602004031741T DE 602004031741 T DE602004031741 T DE 602004031741T DE 602004031741 D1 DE602004031741 D1 DE 602004031741D1
Authority
DE
Germany
Prior art keywords
seat
substantially flat
passages
rotate
mounting system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004031741T
Other languages
English (en)
Inventor
Natale Speciale
Gianluca Valente
Danilo Crippa
Vittorio Pozzetti
Franco Preti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
E T C Epitaxial Tech Center Srl
Original Assignee
E T C Epitaxial Tech Center Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E T C Epitaxial Tech Center Srl filed Critical E T C Epitaxial Tech Center Srl
Publication of DE602004031741D1 publication Critical patent/DE602004031741D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manipulator (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Chain Conveyers (AREA)
  • Physical Vapour Deposition (AREA)
DE602004031741T 2004-06-09 2004-06-09 Halterungssystem für behandlungsapparaturen Active DE602004031741D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IT2004/000335 WO2005121417A1 (en) 2004-06-09 2004-06-09 Support system for treatment apparatuses

Publications (1)

Publication Number Publication Date
DE602004031741D1 true DE602004031741D1 (de) 2011-04-21

Family

ID=34957964

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004031741T Active DE602004031741D1 (de) 2004-06-09 2004-06-09 Halterungssystem für behandlungsapparaturen

Country Status (7)

Country Link
US (1) US20060275104A1 (de)
EP (1) EP1651802B1 (de)
JP (1) JP4923189B2 (de)
CN (1) CN100529198C (de)
AT (1) ATE501286T1 (de)
DE (1) DE602004031741D1 (de)
WO (1) WO2005121417A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004053188A1 (en) * 2002-12-10 2004-06-24 E.T.C. Epitaxial Technology Center Srl Susceptor system
CN100507073C (zh) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 感受器系统
DE102005055252A1 (de) * 2005-11-19 2007-05-24 Aixtron Ag CVD-Reaktor mit gleitgelagerten Suszeptorhalter
DE102006018514A1 (de) 2006-04-21 2007-10-25 Aixtron Ag Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer
JP6058491B2 (ja) * 2012-07-13 2017-01-11 晶元光電股▲ふん▼有限公司 気相成長用反応装置
ITCO20130041A1 (it) * 2013-09-27 2015-03-28 Lpe Spa Suscettore con elemento di supporto
ITCO20130073A1 (it) 2013-12-19 2015-06-20 Lpe Spa Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore
CN104046962B (zh) * 2014-06-04 2016-07-06 中国电子科技集团公司第四十八研究所 一种轴向气力驱动行星旋转装置
EP3164884B1 (de) 2014-07-03 2022-02-23 LPE S.p.A. Werkzeug zum manipulieren von substraten, manipulationsverfahren und epitaxiereaktor
CN105386121B (zh) * 2015-10-22 2018-05-15 中国电子科技集团公司第四十八研究所 用于碳化硅外延生长的行星旋转装置
US10947640B1 (en) * 2016-12-02 2021-03-16 Svagos Technik, Inc. CVD reactor chamber with resistive heating for silicon carbide deposition
CN106435719A (zh) * 2016-12-21 2017-02-22 东莞市天域半导体科技有限公司 一种卫星盘自转的SiC外延生长主盘结构
CN109594063A (zh) * 2018-12-27 2019-04-09 西安奕斯伟硅片技术有限公司 一种外延反应设备
CN110129881A (zh) * 2019-05-06 2019-08-16 杭州弘晟智能科技有限公司 一种用于晶圆旋转的气浮基座
IT201900022047A1 (it) 2019-11-25 2021-05-25 Lpe Spa Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale
WO2021119900A1 (zh) * 2019-12-16 2021-06-24 东莞市中镓半导体科技有限公司 用于GaN材料生长的气动托盘
CN112117225A (zh) * 2020-09-23 2020-12-22 北京北方华创微电子装备有限公司 一种半导体外延设备及其基座组件
KR20220067988A (ko) * 2020-11-18 2022-05-25 주식회사 원익아이피에스 기판 지지 조립체 및 기판 처리 장치
CN113502535B (zh) * 2021-09-09 2021-12-10 材料科学姑苏实验室 样品生长装置、样品生长方法及分子束外延系统

Family Cites Families (26)

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Publication number Priority date Publication date Assignee Title
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
JP2773934B2 (ja) * 1989-11-17 1998-07-09 古河電気工業株式会社 半導体ウエハの成膜装置
JPH04100223A (ja) * 1990-08-18 1992-04-02 Fujitsu Ltd 半導体処理装置及び処理方法
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5106204A (en) * 1991-03-25 1992-04-21 Dunham James L High unit load gas bearing
US5226383A (en) * 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
US5221356A (en) * 1992-10-08 1993-06-22 Northern Telecom Limited Apparatus for manufacturing semiconductor wafers
JP2762022B2 (ja) * 1993-08-25 1998-06-04 日本エー・エス・エム株式会社 Ｃｖｄ装置に使用する回転機構、およびこの機構を利用して被処理体の温度を制御する方法
IT1271233B (it) * 1994-09-30 1997-05-27 Lpe Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
SE9500326D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
SE9600705D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5788777A (en) * 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
JP2001284259A (ja) * 2000-03-30 2001-10-12 Matsushita Electric Ind Co Ltd 半導体ウエハ製造装置におけるウエハ用のホルダ
DE10055033A1 (de) * 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
DE10055182A1 (de) * 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
DE10056029A1 (de) * 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US6569250B2 (en) * 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
DE10132448A1 (de) * 2001-07-04 2003-01-23 Aixtron Ag CVD-Vorrichtung mit differenziert temperiertem Substrathalter
ITMI20020306A1 (it) * 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
JP3908112B2 (ja) * 2002-07-29 2007-04-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法
WO2004053188A1 (en) * 2002-12-10 2004-06-24 E.T.C. Epitaxial Technology Center Srl Susceptor system
CN100507073C (zh) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 感受器系统

Also Published As

Publication number Publication date
WO2005121417A1 (en) 2005-12-22
JP2008502122A (ja) 2008-01-24
CN100529198C (zh) 2009-08-19
EP1651802B1 (de) 2011-03-09
JP4923189B2 (ja) 2012-04-25
US20060275104A1 (en) 2006-12-07
EP1651802A1 (de) 2006-05-03
ATE501286T1 (de) 2011-03-15
CN1777707A (zh) 2006-05-24

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