JP4423205B2 - サセプタ・システム、及び、サセプタ・システムを含む装置 - Google Patents
サセプタ・システム、及び、サセプタ・システムを含む装置 Download PDFInfo
- Publication number
- JP4423205B2 JP4423205B2 JP2004558342A JP2004558342A JP4423205B2 JP 4423205 B2 JP4423205 B2 JP 4423205B2 JP 2004558342 A JP2004558342 A JP 2004558342A JP 2004558342 A JP2004558342 A JP 2004558342A JP 4423205 B2 JP4423205 B2 JP 4423205B2
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- Prior art keywords
- susceptor
- processing chamber
- susceptor element
- hollow
- elements
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/14—Arrangements of heating devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
- F27B14/061—Induction furnaces
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Gripping On Spindles (AREA)
- Catalysts (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Description
Claims (19)
- 基板及び/又はウエーハの処理装置のためのサセプタ・システムであって、
基板及び/又はウエーハが挿入される方向に直交する断面において、上側、下側、右側及び左側の4つの壁により上下左右の範囲を定められた処理チャンバー(1)、及び、少なくとも1個の加熱用ソレノイド(9)を備え、
外面により範囲を定められ、少なくとも上下に対向して配置される2個のサセプタ要素(2、3)を含み、そのうちの少なくとも1個のサセプタ要素は電磁誘導により加熱するのに適した材料から作られたサセプタ要素(2、3)を含み、
その少なくとも1個のサセプタ要素(2、3)が基板及び/又はウエーハが挿入される長手方向に伸びた少なくとも1個の貫通穴を有するように中空であり、該少なくとも1個の中空のサセプタ要素(2)の外面の第一の部分と、該少なくとも1個の中空のサセプタ要素(2)に対向して配置されるサセプタ要素(3)の外面の第一の部分は、それぞれ、処理チャンバー(1)の少なくとも上側の壁と下側の壁を構成し、かつ、少なくとも1個の中空のサセプタ要素(2)の外面の第二の部分と、該少なくとも1個の中空のサセプタ要素(2)に対向して配置されるサセプタ要素(3)の外面の第二の部分は、加熱用ソレノイド(9)に近接して配置され、
処理チャンバー(1)は、前記長手方向に伸びていて、その断面形状は、前記長手方向に一定であることを特徴とするサセプタ・システム。 - 少なくとも1個のサセプタ要素(2、3)には少なくともその外面の第1の部分に熱的及び化学的防護部を設けてあることを特徴とする請求項1に基づくサセプタ・システム。
- その防護部は、少なくとも1個のサセプタ要素(2、3)の内側の不活性及び耐熱性の材料による少なくとも一層の表面層により構成されることを特徴とする請求項2に基づくサセプタ・システム。
- その防護部は、少なくとも1個のサセプタ要素(2、3)の外面に隣接した不活性及び耐熱性の材料による少なくとも1枚の板により構成されることを特徴とする請求項2に基づくサセプタ・システム。
- その防護部は、少なくとも1個のサセプタ要素(2、3)の内側の不活性及び耐熱性の材料による少なくとも一層の表面層及び少なくとも1個のサセプタ要素(2、3)の外面に隣接した不活性及び耐熱性の材料による少なくとも1枚の板の組み合わせにより構成されることを特徴とする請求項2に基づくサセプタ・システム。
- 不活性及び耐熱性の材料が電気的絶縁性も有していることを特徴とする請求項3から5のいずれかに基づくサセプタ・システム。
- 上下に対向して配置される2個のサセプタ要素(2、3)は、いずれも、中空のサセプタ要素であることを特徴とする請求項1ないし6のいずれかに基づくサセプタ・システム。
- さらに、電気的に絶縁性で、かつ、不活性及び耐熱性でもある材料で作られていて、かつ、それぞれ、処理チャンバー(1)の右側の壁及び左側の壁として構成されるサセプタ要素(4、5)を含んでいることを特徴とする請求項7に基づくサセプタ・システム。
- 導電性材料で作られ、かつ、それぞれ、処理チャンバー(1)の右側の壁及び左側の壁として機能するサセプタ要素(4、5)を含んでいることを特徴とする請求項7に基づくサセプタ・システム。
- 右側の壁及び左側の壁として構成されるサセプタ要素(4、5)には、少なくとも、処理チャンバー(1)に隣接した表面の部分上に熱的及び化学的防護部を設けていることを特徴とする請求項9に基づくサセプタ・システム。
- 右側の壁及び左側の壁として構成されるサセプタ要素(4、5)が中空でないことを特徴とする請求項8、9、10のいずれかに基づくサセプタ・システム。
- 中空のサセプタ要素(2、3)の少なくとも1個が前記長手方向に一定形状で伸びていて、円形又は楕円形の外形を有する断面を有することを特徴とする請求項7から11のいずれかに基づくサセプタ・システム。
- 中空でないサセプタ要素(4、5)の少なくとも1個が前記長手方向に一定形状で伸びていて、長方形又は台形の外形をしている断面を有していることを特徴とする請求項11または12に基づくサセプタ・システム。
- 4つの壁により範囲を定められた処理チャンバー(1)を備えている基板及び/又はウエーハを処理する装置であって、処理チャンバー(1)、及び、サセプタ要素(2、3、4、5)と処理チャンバー(1)の回りに巻かれて、電磁誘導によりサセプタ要素(2、3、4、5)を加熱する少なくとも1個のソレノイド(9)に隣接する請求項1から13のいずれかに基づくサセプタ・システムを含むことを特徴とする装置。
- サセプタ・システムが前記長手方向に伸びていて、サセプタ・システムの断面の外形が実質的に前記長手方向に一定で、円形又は楕円形であることを特徴とする請求項14に基づく装置。
- 処理チャンバー(1)及びサセプタ要素(2、3、4、5)を囲んでいて、かつ、前記長手方向に伸びている耐熱性及び断熱性の材料の管により構成された第一の構造体(7)を含み、かつ、ソレノイド(9)がその第1の構造体(7)の回りに巻かれていることを特徴とする請求項14又は15に記載の装置。
- その第一の構造体(7)を囲む第二の密封性構造体(8)を含み、かつ、ソレノイド(9)が第二の構造体も囲んで巻かれていることを特徴とする請求項16に基づく装置。
- サセプタ要素(2、3、4、5)の少なくとも1個の貫通穴(21、31)に少なくとも1系統のガス流を流すための手段を含むことを特徴とする請求項14から17のいずれかに基づく装置。
- 処理チャンバー(1)内に取付けられ、また、少なくとも1枚の基板又は少なくとも1枚のウエーハを保持するスライド(6)を含み、そのスライド(6)が前記長手方向に案内されながら滑ることができることを特徴とする請求項14から18のいずれかに基づく装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IT2002/000773 WO2004053187A1 (en) | 2002-12-10 | 2002-12-10 | Susceptor system________________________ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006509362A JP2006509362A (ja) | 2006-03-16 |
JP4423205B2 true JP4423205B2 (ja) | 2010-03-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004558342A Expired - Lifetime JP4423205B2 (ja) | 2002-12-10 | 2002-12-10 | サセプタ・システム、及び、サセプタ・システムを含む装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7488922B2 (ja) |
EP (1) | EP1570107B1 (ja) |
JP (1) | JP4423205B2 (ja) |
CN (1) | CN100507073C (ja) |
AT (1) | ATE476536T1 (ja) |
AU (1) | AU2002368438A1 (ja) |
DE (1) | DE60237240D1 (ja) |
WO (1) | WO2004053187A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2002368439A1 (en) * | 2002-12-10 | 2004-06-30 | Etc Srl | Susceptor system |
CN100507073C (zh) * | 2002-12-10 | 2009-07-01 | Etc外延技术中心有限公司 | 感受器系统 |
DE602004031741D1 (de) * | 2004-06-09 | 2011-04-21 | E T C Epitaxial Technology Ct Srl | Halterungssystem für behandlungsapparaturen |
DE102004062553A1 (de) * | 2004-12-24 | 2006-07-06 | Aixtron Ag | CVD-Reaktor mit RF-geheizter Prozesskammer |
ITMI20052498A1 (it) * | 2005-12-28 | 2007-06-29 | Lpe Spa | Camera di reazione a temperatura differenziata |
KR20130107001A (ko) * | 2012-03-21 | 2013-10-01 | 엘지이노텍 주식회사 | 증착 장치 |
ITCO20130073A1 (it) | 2013-12-19 | 2015-06-20 | Lpe Spa | Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore |
CN106471614B (zh) | 2014-07-03 | 2020-08-25 | Lpe公司 | 用于操纵衬底的工具、操纵方法及外延反应器 |
US10407769B2 (en) * | 2016-03-18 | 2019-09-10 | Goodrich Corporation | Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces |
CN107435165A (zh) * | 2016-05-26 | 2017-12-05 | 北京北方华创微电子装备有限公司 | 一种外延反应腔和化学气相外延设备 |
US10947640B1 (en) * | 2016-12-02 | 2021-03-16 | Svagos Technik, Inc. | CVD reactor chamber with resistive heating for silicon carbide deposition |
JP7451429B2 (ja) * | 2018-06-07 | 2024-03-18 | フィリップ・モーリス・プロダクツ・ソシエテ・アノニム | エアロゾル発生システム、エアロゾル形成装置、およびそのためのカートリッジ |
IT201800011158A1 (it) * | 2018-12-17 | 2020-06-17 | Lpe Spa | Camera di reazione per un reattore epitassiale di materiale semiconduttore con sezione longitudinale non-uniforme e reattore |
IT201900022047A1 (it) | 2019-11-25 | 2021-05-25 | Lpe Spa | Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale |
CN111172587A (zh) * | 2020-02-25 | 2020-05-19 | 深圳市纳设智能装备有限公司 | 一种外延生长设备的反应室结构 |
IT202000021517A1 (it) | 2020-09-11 | 2022-03-11 | Lpe Spa | Metodo per deposizione cvd di carburo di silicio con drogaggio di tipo n e reattore epitassiale |
Family Cites Families (24)
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GB1458222A (en) * | 1973-03-12 | 1976-12-08 | Electricity Council | Furnaces for the production of tubular or cyclindrical ceramic articles |
US3980854A (en) * | 1974-11-15 | 1976-09-14 | Rca Corporation | Graphite susceptor structure for inductively heating semiconductor wafers |
JPH0669027B2 (ja) | 1983-02-21 | 1994-08-31 | 株式会社日立製作所 | 半導体ウエハの薄膜形成方法 |
US4794217A (en) | 1985-04-01 | 1988-12-27 | Qing Hua University | Induction system for rapid heat treatment of semiconductor wafers |
FR2596070A1 (fr) | 1986-03-21 | 1987-09-25 | Labo Electronique Physique | Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan |
FR2650841A1 (fr) | 1989-08-11 | 1991-02-15 | Thomson Tubes Electroniques | Dispositif de depot d'un materiau sur un support thermiquement conducteur |
US5155062A (en) | 1990-12-20 | 1992-10-13 | Cree Research, Inc. | Method for silicon carbide chemical vapor deposition using levitated wafer system |
US5106204A (en) | 1991-03-25 | 1992-04-21 | Dunham James L | High unit load gas bearing |
US5226383A (en) | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
US5221356A (en) | 1992-10-08 | 1993-06-22 | Northern Telecom Limited | Apparatus for manufacturing semiconductor wafers |
SE9500326D0 (sv) * | 1995-01-31 | 1995-01-31 | Abb Research Ltd | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
SE9600705D0 (sv) | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
US5788777A (en) | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
US6005226A (en) | 1997-11-24 | 1999-12-21 | Steag-Rtp Systems | Rapid thermal processing (RTP) system with gas driven rotating substrate |
DE10055033A1 (de) | 2000-11-07 | 2002-05-08 | Aixtron Ag | CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor |
DE10055182A1 (de) | 2000-11-08 | 2002-05-29 | Aixtron Ag | CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter |
DE10056029A1 (de) | 2000-11-11 | 2002-05-16 | Aixtron Ag | Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor |
US6569250B2 (en) | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
DE10132448A1 (de) * | 2001-07-04 | 2003-01-23 | Aixtron Ag | CVD-Vorrichtung mit differenziert temperiertem Substrathalter |
ITMI20020306A1 (it) | 2002-02-15 | 2003-08-18 | Lpe Spa | Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso |
US6797069B2 (en) | 2002-04-08 | 2004-09-28 | Cree, Inc. | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
CN100507073C (zh) * | 2002-12-10 | 2009-07-01 | Etc外延技术中心有限公司 | 感受器系统 |
AU2002368439A1 (en) | 2002-12-10 | 2004-06-30 | Etc Srl | Susceptor system |
DE602004031741D1 (de) | 2004-06-09 | 2011-04-21 | E T C Epitaxial Technology Ct Srl | Halterungssystem für behandlungsapparaturen |
-
2002
- 2002-12-10 CN CNB028300173A patent/CN100507073C/zh not_active Expired - Lifetime
- 2002-12-10 EP EP02808222A patent/EP1570107B1/en not_active Expired - Lifetime
- 2002-12-10 AU AU2002368438A patent/AU2002368438A1/en not_active Abandoned
- 2002-12-10 JP JP2004558342A patent/JP4423205B2/ja not_active Expired - Lifetime
- 2002-12-10 DE DE60237240T patent/DE60237240D1/de not_active Expired - Lifetime
- 2002-12-10 AT AT02808222T patent/ATE476536T1/de not_active IP Right Cessation
- 2002-12-10 US US10/538,416 patent/US7488922B2/en not_active Expired - Lifetime
- 2002-12-10 WO PCT/IT2002/000773 patent/WO2004053187A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2004053187A1 (en) | 2004-06-24 |
CN1708601A (zh) | 2005-12-14 |
ATE476536T1 (de) | 2010-08-15 |
AU2002368438A1 (en) | 2004-06-30 |
JP2006509362A (ja) | 2006-03-16 |
DE60237240D1 (de) | 2010-09-16 |
EP1570107A1 (en) | 2005-09-07 |
CN100507073C (zh) | 2009-07-01 |
US7488922B2 (en) | 2009-02-10 |
US20060081187A1 (en) | 2006-04-20 |
EP1570107B1 (en) | 2010-08-04 |
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