EP1739759A3 - Substrat monocristallin de nitrure de gallium et procédé de fabrication - Google Patents

Substrat monocristallin de nitrure de gallium et procédé de fabrication Download PDF

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Publication number
EP1739759A3
EP1739759A3 EP06015516.5A EP06015516A EP1739759A3 EP 1739759 A3 EP1739759 A3 EP 1739759A3 EP 06015516 A EP06015516 A EP 06015516A EP 1739759 A3 EP1739759 A3 EP 1739759A3
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EP
European Patent Office
Prior art keywords
mask
gan
substrate
single crystal
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06015516.5A
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German (de)
English (en)
Other versions
EP1739759A2 (fr
Inventor
Motoki c/o Itami Works of Sumitomo El. Kensaku
Okahisa c/o Itami Works o. Sumitomo El. Takuji
Matsumoto c/o Itami Works o. Sumitomo El. Naoki
Matsushima c/o Itami Works o. Sumitomo Masato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of EP1739759A2 publication Critical patent/EP1739759A2/fr
Publication of EP1739759A3 publication Critical patent/EP1739759A3/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP06015516.5A 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium et procédé de fabrication Withdrawn EP1739759A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14771698 1998-05-28
EP99110229A EP0967664B1 (fr) 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium et procédé de fabrication

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP99110229A Division EP0967664B1 (fr) 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium et procédé de fabrication

Publications (2)

Publication Number Publication Date
EP1739759A2 EP1739759A2 (fr) 2007-01-03
EP1739759A3 true EP1739759A3 (fr) 2014-12-24

Family

ID=15436590

Family Applications (4)

Application Number Title Priority Date Filing Date
EP06018999A Withdrawn EP1739760A2 (fr) 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium et procédé de fabrication
EP06015516.5A Withdrawn EP1739759A3 (fr) 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium et procédé de fabrication
EP99110229A Expired - Lifetime EP0967664B1 (fr) 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium et procédé de fabrication
EP06006946A Withdrawn EP1672708A3 (fr) 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP06018999A Withdrawn EP1739760A2 (fr) 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium et procédé de fabrication

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP99110229A Expired - Lifetime EP0967664B1 (fr) 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium et procédé de fabrication
EP06006946A Withdrawn EP1672708A3 (fr) 1998-05-28 1999-05-26 Substrat monocristallin de nitrure de gallium

Country Status (7)

Country Link
US (1) US20020011599A1 (fr)
EP (4) EP1739760A2 (fr)
JP (1) JP2010132556A (fr)
KR (1) KR100406216B1 (fr)
CN (1) CN1148810C (fr)
DE (1) DE69933169T2 (fr)
TW (1) TW428331B (fr)

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JP7497222B2 (ja) 2020-06-12 2024-06-10 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物基板、及びｉｉｉ族窒化物結晶の製造方法
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CN112802930B (zh) * 2021-04-15 2021-07-06 至芯半导体(杭州)有限公司 Iii族氮化物衬底制备方法和半导体器件
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JP7434234B2 (ja) 2021-09-16 2024-02-20 株式会社東芝 半導体装置の製造方法及び半導体装置
KR20230073549A (ko) * 2021-11-19 2023-05-26 주식회사루미지엔테크 질화물막의 성장 방법
CN114284406B (zh) * 2021-12-28 2023-08-01 湘能华磊光电股份有限公司 一种氮化物发光二极管的制备方法
CN114232069B (zh) * 2022-02-25 2022-06-10 北京通美晶体技术股份有限公司 一种Ⅱ族元素掺杂GaAs单晶硅及其制备方法

Citations (1)

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KR19990088669A (ko) 1999-12-27
CN1237795A (zh) 1999-12-08
JP2010132556A (ja) 2010-06-17
DE69933169D1 (de) 2006-10-26
DE69933169T2 (de) 2007-09-13
EP0967664A1 (fr) 1999-12-29
CN1148810C (zh) 2004-05-05
TW428331B (en) 2001-04-01
EP1739760A2 (fr) 2007-01-03
EP1672708A2 (fr) 2006-06-21
US20020011599A1 (en) 2002-01-31
EP0967664B1 (fr) 2006-09-13
EP1739759A2 (fr) 2007-01-03
EP1672708A3 (fr) 2006-06-28

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