SE8503615L - MOSPHET DEVICE WITH POLYGONAL STRUCTURE - Google Patents

MOSPHET DEVICE WITH POLYGONAL STRUCTURE

Info

Publication number
SE8503615L
SE8503615L SE8503615A SE8503615A SE8503615L SE 8503615 L SE8503615 L SE 8503615L SE 8503615 A SE8503615 A SE 8503615A SE 8503615 A SE8503615 A SE 8503615A SE 8503615 L SE8503615 L SE 8503615L
Authority
SE
Sweden
Prior art keywords
sources
polygonal
adjacent
electrode
channel
Prior art date
Application number
SE8503615A
Other languages
Swedish (sv)
Other versions
SE8503615D0 (en
SE465444B (en
Inventor
A Lindow
T Herman
V Rumennik
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26715426&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SE8503615(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of SE8503615D0 publication Critical patent/SE8503615D0/en
Publication of SE8503615L publication Critical patent/SE8503615L/en
Publication of SE465444B publication Critical patent/SE465444B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

In a high power MOSFET having a plurality of closely packed polygonal sources 123 spaced from one another on one surface of a semiconductor body 121, and an elongated gate electrode 141 exposed in the spacing between the polygonal sources and cooperating with two channels, 161, 162 one for each adjacent source electrode, to control conduction from the source electrode through the channel and then to drain electrode 151 on the opposite surface of the semiconductor body, the conductive region adjacent the channel and between adjacent sources is relatively highly conductive in the section 128 of the channel adjacent to the surface containing the sources. The polygonal shaped source members are preferably hexagonal. Each polygonal region has a relatively deep central portion 122, 123 and a shallow outer shelf portion 124, 125. The shelf portion generally underlies an annular source region 126, 127. The deep central portion underlies an aluminium conductive electrode 150 and is sufficiently deep that it will not be fully penetrated by aluminium spiking. <IMAGE>
SE8503615A 1978-10-13 1985-07-26 MOSFET DEVICE WITH POLYGONAL CHANNEL STRUCTURE SE465444B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95131078A 1978-10-13 1978-10-13
US3866279A 1979-05-14 1979-05-14

Publications (3)

Publication Number Publication Date
SE8503615D0 SE8503615D0 (en) 1985-07-26
SE8503615L true SE8503615L (en) 1985-07-26
SE465444B SE465444B (en) 1991-09-09

Family

ID=26715426

Family Applications (2)

Application Number Title Priority Date Filing Date
SE7908479A SE443682B (en) 1978-10-13 1979-10-12 MOSFET DEVICE FOR HIGH VOLTAGE USE
SE8503615A SE465444B (en) 1978-10-13 1985-07-26 MOSFET DEVICE WITH POLYGONAL CHANNEL STRUCTURE

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SE7908479A SE443682B (en) 1978-10-13 1979-10-12 MOSFET DEVICE FOR HIGH VOLTAGE USE

Country Status (19)

Country Link
JP (2) JP2622378B2 (en)
AR (1) AR219006A1 (en)
BR (1) BR7906338A (en)
CA (2) CA1123119A (en)
CH (2) CH642485A5 (en)
CS (1) CS222676B2 (en)
DE (2) DE2940699C2 (en)
DK (3) DK157272C (en)
ES (1) ES484652A1 (en)
FR (1) FR2438917A1 (en)
GB (1) GB2033658B (en)
HU (1) HU182506B (en)
IL (1) IL58128A (en)
IT (1) IT1193238B (en)
MX (1) MX147137A (en)
NL (1) NL175358C (en)
PL (1) PL123961B1 (en)
SE (2) SE443682B (en)
SU (1) SU1621817A3 (en)

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US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
DE3040775C2 (en) * 1980-10-29 1987-01-15 Siemens AG, 1000 Berlin und 8000 München Controllable MIS semiconductor device
US4412242A (en) 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
GB2111745B (en) * 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
DE3346286A1 (en) * 1982-12-21 1984-06-28 International Rectifier Corp., Los Angeles, Calif. High-power metal-oxide field-effect transistor semiconductor component
JPS59167066A (en) * 1983-03-14 1984-09-20 Nissan Motor Co Ltd Vertical type metal oxide semiconductor field effect transistor
JPS6010677A (en) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd Vertical mos transistor
JPH0247874A (en) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Manufacture of mos semiconductor device
US5766966A (en) * 1996-02-09 1998-06-16 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
IT1247293B (en) * 1990-05-09 1994-12-12 Int Rectifier Corp POWER TRANSISTOR DEVICE PRESENTING AN ULTRA-DEEP REGION, AT A GREATER CONCENTRATION
US5304831A (en) * 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
IT1250233B (en) * 1991-11-29 1995-04-03 St Microelectronics Srl PROCEDURE FOR THE MANUFACTURE OF INTEGRATED CIRCUITS IN MOS TECHNOLOGY.
DE59208987D1 (en) * 1992-08-10 1997-11-27 Siemens Ag Power MOSFET with improved avalanche strength
JPH06268227A (en) * 1993-03-10 1994-09-22 Hitachi Ltd Insulated gate bipolar transistor
DE69321965T2 (en) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS power chip type and package assembly
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
EP0660402B1 (en) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power semiconductor device
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
EP0689238B1 (en) * 1994-06-23 2002-02-20 STMicroelectronics S.r.l. MOS-technology power device manufacturing process
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
EP0697728B1 (en) * 1994-08-02 1999-04-21 STMicroelectronics S.r.l. MOS-technology power device chip and package assembly
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
DE69534919T2 (en) 1995-10-30 2007-01-25 Stmicroelectronics S.R.L., Agrate Brianza Power device in MOS technology with a single critical size
EP0772241B1 (en) 1995-10-30 2004-06-09 STMicroelectronics S.r.l. High density MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
EP0782201B1 (en) * 1995-12-28 2000-08-30 STMicroelectronics S.r.l. MOS-technology power device integrated structure
EP0961325B1 (en) 1998-05-26 2008-05-07 STMicroelectronics S.r.l. High integration density MOS technology power device
WO2000062345A1 (en) 1999-04-09 2000-10-19 Shindengen Electric Manufacturing Co., Ltd. High-voltage semiconductor device
JP4122113B2 (en) * 1999-06-24 2008-07-23 新電元工業株式会社 High breakdown strength field effect transistor
US6344379B1 (en) * 1999-10-22 2002-02-05 Semiconductor Components Industries Llc Semiconductor device with an undulating base region and method therefor
JP4845293B2 (en) * 2000-08-30 2011-12-28 新電元工業株式会社 Field effect transistor
JP2006295134A (en) 2005-03-17 2006-10-26 Sanyo Electric Co Ltd Semiconductor device and method for manufacture
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US10115815B2 (en) 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
US9530844B2 (en) 2012-12-28 2016-12-27 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
JP5907097B2 (en) * 2013-03-18 2016-04-20 三菱電機株式会社 Semiconductor device
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP3183754A4 (en) 2014-08-19 2018-05-02 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US10615274B2 (en) 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness

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US4015278A (en) * 1974-11-26 1977-03-29 Fujitsu Ltd. Field effect semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor
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JPH05185381A (en) * 1992-01-10 1993-07-27 Yuum Kogyo:Kk Handle for edge-replaceable saw

Also Published As

Publication number Publication date
IT7926435A0 (en) 1979-10-11
DK512388A (en) 1988-09-15
JP2643095B2 (en) 1997-08-20
SU1621817A3 (en) 1991-01-15
IL58128A (en) 1981-12-31
JP2622378B2 (en) 1997-06-18
MX147137A (en) 1982-10-13
CH660649A5 (en) 1987-05-15
CA1123119A (en) 1982-05-04
CA1136291A (en) 1982-11-23
DK512488D0 (en) 1988-09-15
BR7906338A (en) 1980-06-24
ES484652A1 (en) 1980-09-01
SE8503615D0 (en) 1985-07-26
GB2033658A (en) 1980-05-21
DK512388D0 (en) 1988-09-15
CH642485A5 (en) 1984-04-13
NL7907472A (en) 1980-04-15
FR2438917B1 (en) 1984-09-07
DE2954481C2 (en) 1990-12-06
SE7908479L (en) 1980-04-14
SE465444B (en) 1991-09-09
IT1193238B (en) 1988-06-15
PL123961B1 (en) 1982-12-31
NL175358C (en) 1984-10-16
DE2940699C2 (en) 1986-04-03
DK350679A (en) 1980-04-14
GB2033658B (en) 1983-03-02
DE2940699A1 (en) 1980-04-24
AR219006A1 (en) 1980-07-15
NL175358B (en) 1984-05-16
DK157272C (en) 1990-04-30
JPS6323365A (en) 1988-01-30
FR2438917A1 (en) 1980-05-09
DK157272B (en) 1989-11-27
HU182506B (en) 1984-01-30
PL218878A1 (en) 1980-08-11
DK512488A (en) 1988-09-15
JPH07169950A (en) 1995-07-04
CS222676B2 (en) 1983-07-29
SE443682B (en) 1986-03-03

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