SE7705766L - Forfarande och anordning for att astadkomma en beleggning i en luminiscent urladdning - Google Patents

Forfarande och anordning for att astadkomma en beleggning i en luminiscent urladdning

Info

Publication number
SE7705766L
SE7705766L SE7705766A SE7705766A SE7705766L SE 7705766 L SE7705766 L SE 7705766L SE 7705766 A SE7705766 A SE 7705766A SE 7705766 A SE7705766 A SE 7705766A SE 7705766 L SE7705766 L SE 7705766L
Authority
SE
Sweden
Prior art keywords
cathode
substrate
target
coating
biasing voltage
Prior art date
Application number
SE7705766A
Other languages
Unknown language ( )
English (en)
Swedish (sv)
Inventor
B Zega
Original Assignee
Battelle Memorial Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Battelle Memorial Institute filed Critical Battelle Memorial Institute
Publication of SE7705766L publication Critical patent/SE7705766L/

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
SE7705766A 1976-05-19 1977-05-17 Forfarande och anordning for att astadkomma en beleggning i en luminiscent urladdning SE7705766L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH623776A CH611938A5 (xx) 1976-05-19 1976-05-19

Publications (1)

Publication Number Publication Date
SE7705766L true SE7705766L (sv) 1977-11-20

Family

ID=4306421

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7705766A SE7705766L (sv) 1976-05-19 1977-05-17 Forfarande och anordning for att astadkomma en beleggning i en luminiscent urladdning

Country Status (11)

Country Link
US (1) US4116791A (xx)
JP (1) JPS608303B2 (xx)
AT (1) AT354214B (xx)
BE (1) BE854816A (xx)
CH (1) CH611938A5 (xx)
DE (1) DE2722708A1 (xx)
FR (1) FR2352393A1 (xx)
GB (1) GB1548061A (xx)
IT (1) IT1085894B (xx)
NL (1) NL7705483A (xx)
SE (1) SE7705766L (xx)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2735525A1 (de) * 1977-08-06 1979-02-22 Leybold Heraeus Gmbh & Co Kg Katodenanordnung mit target fuer zerstaeubungsanlagen zum aufstaeuben dielektrischer oder amagnetischer schichten auf substrate
JPS5723606Y2 (xx) * 1978-04-28 1982-05-22
GB2051877B (en) * 1979-04-09 1983-03-02 Vac Tec Syst Magnetically enhanced sputtering device and method
FR2507126A2 (fr) * 1980-06-06 1982-12-10 Stephanois Rech Mec Procede pour la fabrication d'une couche composite resistant a la fois au grippage, a l'abrasion, a la corrosion et a la fatigue par contraintes alternees, et couche composite ainsi obtenue
JPS5778519A (en) * 1980-11-05 1982-05-17 Citizen Watch Co Ltd Production of electrochromic display element
DE3107914A1 (de) * 1981-03-02 1982-09-16 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung
FR2501727A1 (fr) * 1981-03-13 1982-09-17 Vide Traitement Procede de traitements thermochimiques de metaux par bombardement ionique
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
EP0084971B2 (en) * 1982-01-26 1990-07-18 Materials Research Corporation A method for reactive bias sputtering
DE3272083D1 (en) * 1982-03-31 1986-08-28 Ibm Deutschland Reactor for reactive ion etching, and etching process
FR2528452B1 (fr) * 1982-06-11 1985-12-20 Vide Traitement Procede et dispositif pour la realisation de depots metalliques ou de composes metalliques, a la surface d'une piece en un materiau electriquement conducteur
JPS60501061A (ja) * 1983-04-18 1985-07-11 バテル デイベロツプメント コ−ポレイシヨン MoまたはW金属に窒素を含ませることによって形成された硬質層およびこの層を得る方法
US4468309A (en) * 1983-04-22 1984-08-28 White Engineering Corporation Method for resisting galling
US4420386A (en) * 1983-04-22 1983-12-13 White Engineering Corporation Method for pure ion plating using magnetic fields
US4520268A (en) * 1983-05-26 1985-05-28 Pauline Y. Lau Method and apparatus for introducing normally solid materials into substrate surfaces
US4512864A (en) * 1983-11-30 1985-04-23 Ppg Industries, Inc. Low resistance indium oxide films
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
US4933058A (en) * 1986-01-23 1990-06-12 The Gillette Company Formation of hard coatings on cutting edges
US4774437A (en) * 1986-02-28 1988-09-27 Varian Associates, Inc. Inverted re-entrant magnetron ion source
US4826365A (en) * 1988-01-20 1989-05-02 White Engineering Corporation Material-working tools and method for lubricating
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
DE3941795A1 (de) * 1989-12-19 1991-06-20 Leybold Ag Optisch wirkende schicht fuer substrate, die insbesondere eine hohe antireflexwirkung aufweist, und verfahren zur herstellung der schicht
DE3941797A1 (de) * 1989-12-19 1991-06-20 Leybold Ag Belag, bestehend aus einem optisch wirkenden schichtsystem, fuer substrate, wobei das schichtsystem insbesondere eine hohe antireflexwirkung aufweist, und verfahren zur herstellung des belags
CA2061119C (en) * 1991-04-19 1998-02-03 Pei-Ing P. Lee Method of depositing conductors in high aspect ratio apertures
US5458759A (en) * 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
KR950000906B1 (ko) * 1991-08-02 1995-02-03 니찌덴 아넬바 가부시기가이샤 스퍼터링장치
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5411600A (en) * 1992-06-03 1995-05-02 Eastman Kodak Company Ultrathin film thermocouples and method of manufacture
GB2282824A (en) * 1993-10-14 1995-04-19 Secr Defence Reinforcement particles pre-coated with metal matrix; particle-reinforced metal matrix composites
DE4434428A1 (de) * 1994-09-27 1996-03-28 Widia Gmbh Verbundkörper, Verwendung dieses Verbundkörpers und Verfahren zu seiner Herstellung
US5859404A (en) * 1995-10-12 1999-01-12 Hughes Electronics Corporation Method and apparatus for plasma processing a workpiece in an enveloping plasma
GB2306510B (en) * 1995-11-02 1999-06-23 Univ Surrey Modification of metal surfaces
DE19609804C1 (de) * 1996-03-13 1997-07-31 Bosch Gmbh Robert Einrichtung, ihre Verwendung und ihr Betrieb zum Vakuumbeschichten von Schüttgut
EP1135540B1 (de) * 1998-10-21 2002-03-13 Siemens Aktiengesellschaft Verfahren und vorrichtung zur reinigung eines erzeugnisses
CH697036A5 (de) 1998-12-02 2008-03-31 Sulzer Metco Ag Verfahren zur Plasma-Oberflächenbehandlung von Substraten sowie Einrichtung zur Durchführung des Verfahrens.
US6352626B1 (en) 1999-04-19 2002-03-05 Von Zweck Heimart Sputter ion source for boron and other targets
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7137354B2 (en) 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7320734B2 (en) 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
JP4570233B2 (ja) * 2000-10-25 2010-10-27 株式会社アルバック 薄膜形成方法及びその形成装置
US6761804B2 (en) 2002-02-11 2004-07-13 Applied Materials, Inc. Inverted magnetron
SE526857C2 (sv) * 2003-12-22 2005-11-08 Seco Tools Ab Sätt att belägga ett skärverktyg med användning av reaktiv magnetronsputtering
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US7428915B2 (en) * 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US20070051388A1 (en) * 2005-09-06 2007-03-08 Applied Materials, Inc. Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
CN100483643C (zh) * 2006-07-13 2009-04-29 中芯国际集成电路制造(上海)有限公司 一种制作低介电常数层的新方法及其应用
KR20090106617A (ko) * 2007-01-19 2009-10-09 어플라이드 머티어리얼스, 인코포레이티드 플라스마 함침 챔버
US20090197015A1 (en) * 2007-12-25 2009-08-06 Applied Materials, Inc. Method and apparatus for controlling plasma uniformity
CN101851746A (zh) * 2009-04-03 2010-10-06 鸿富锦精密工业(深圳)有限公司 磁控式溅镀靶及磁控式溅镀系统
KR101975741B1 (ko) * 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 타깃 재료의 포장 방법 및 타깃의 장착 방법
TW201209205A (en) * 2010-07-09 2012-03-01 Oc Oerlikon Balzers Ag Magnetron sputtering apparatus
CN106816351B (zh) * 2017-01-20 2018-08-17 信利(惠州)智能显示有限公司 一种离子注入装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB736512A (en) * 1952-08-25 1955-09-07 Edwards & Co London Ltd W Improvements in or relating to cathode sputtering apparatus
GB1072742A (en) * 1962-12-18 1967-06-21 Berghaus Elektrophysik Anst Process for sputtering a metal coating onto a metal workpiece
US3351543A (en) * 1964-05-28 1967-11-07 Gen Electric Process of coating diamond with an adherent metal coating using cathode sputtering
FR1497957A (fr) * 1966-10-27 1967-10-13 Gen Precision Inc Appareil effectuant, simultanément ou non, un décapage et un revêtement par l'action d'ions
US3514388A (en) * 1968-03-18 1970-05-26 Automatic Fire Control Inc Ion metal plating of multiple parts
US3616450A (en) * 1968-11-07 1971-10-26 Peter J Clark Sputtering apparatus
US3594301A (en) * 1968-11-22 1971-07-20 Gen Electric Sputter coating apparatus
FR2058821A5 (en) * 1969-09-29 1971-05-28 Radiotechnique Compelec Cathodic sputtering device
GB1336559A (en) * 1970-05-20 1973-11-07 Triplex Safety Glass Co Metal oxide coatings
US3907660A (en) * 1970-07-31 1975-09-23 Ppg Industries Inc Apparatus for coating glass
US3732158A (en) * 1971-01-14 1973-05-08 Nasa Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias
FR2129996B1 (xx) * 1971-03-25 1975-01-17 Centre Nat Etd Spatiales
CH264574A4 (de) * 1973-03-05 1977-04-29 Suwa Seikosha Kk Verfahren zum Plattieren von Uhrenteilen in einem Vakuumbehälter
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus

Also Published As

Publication number Publication date
IT1085894B (it) 1985-05-28
JPS5310384A (en) 1978-01-30
GB1548061A (en) 1979-07-04
US4116791A (en) 1978-09-26
DE2722708A1 (de) 1977-12-08
CH611938A5 (xx) 1979-06-29
NL7705483A (nl) 1977-11-22
AT354214B (de) 1979-12-27
ATA352977A (de) 1979-05-15
JPS608303B2 (ja) 1985-03-01
FR2352393B1 (xx) 1983-02-11
FR2352393A1 (fr) 1977-12-16
BE854816A (fr) 1977-11-18

Similar Documents

Publication Publication Date Title
SE7705766L (sv) Forfarande och anordning for att astadkomma en beleggning i en luminiscent urladdning
ATE183245T1 (de) Magnetronzerstäubungsanlage und -verfahren
KR880009454A (ko) 스퍼터 성막방법 및 그 장치
FI880203A0 (fi) Foerfarande och anordning foer ytbelaeggning av material.
ES460405A1 (es) Un dispositivo de pulverizacion ionica.
US3562142A (en) R.f.sputter plating method and apparatus employing control of ion and electron bombardment of the plating
DE69408812D1 (de) Elektronenquelle und Elektronenstrahlgerät
ATE3228T1 (de) Zerstaeubungskathode und vorrichtung zum beschichten grossflaechiger substrate durch kathodenzerstaeubung.
ATE118924T1 (de) Plasmaätzvorrichtung mit magnetfeldern an der oberfläche.
MX165683B (es) Dispositivo de carga
JPS5367972A (en) Electrode for elctric discharge lamp
JPS53121454A (en) Electron source of thin film electric field emission type and its manufacture
DE3887093D1 (de) Zerstäubungskatode nach dem Magnetronprinzip.
GB737001A (en) Improvements in or relating to reflex velocity modulated electron discharge devices
JPS5943546B2 (ja) スパツタリング装置
JPS57194254A (en) Cathode for insulator target in rf sputtering
JPS5530199A (en) Method of adhering finely porous electron emission coating substance on cathode assembly by atomizer
DE58902295D1 (de) Verfahren und vorrichtung zum aetzen von substraten mit einer magnetfeldunterstuetzten niederdruck-entladung.
JPS5585671A (en) Sputtering apparatus
JPS5534689A (en) Sputtering device
GB1441745A (en) Manufacture of a pattern on a substrate
JPS5665981A (en) Sputtering device
ES482854A1 (es) Un aparato electrico aislado por gas, y metodo para recoger particulas contaminantes en el mismo
JPS546874A (en) Thin film forming apparatus
JPS53114679A (en) Plasm etching unit

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 7705766-9