GB1548061A - Method and apparatus for forming a deposit by means of a glow discharge - Google Patents

Method and apparatus for forming a deposit by means of a glow discharge

Info

Publication number
GB1548061A
GB1548061A GB20857/77A GB2085777A GB1548061A GB 1548061 A GB1548061 A GB 1548061A GB 20857/77 A GB20857/77 A GB 20857/77A GB 2085777 A GB2085777 A GB 2085777A GB 1548061 A GB1548061 A GB 1548061A
Authority
GB
United Kingdom
Prior art keywords
deposit
forming
glow discharge
glow
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20857/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Battelle Memorial Institute Inc
Original Assignee
Battelle Memorial Institute Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Battelle Memorial Institute Inc filed Critical Battelle Memorial Institute Inc
Publication of GB1548061A publication Critical patent/GB1548061A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
GB20857/77A 1976-05-19 1977-05-18 Method and apparatus for forming a deposit by means of a glow discharge Expired GB1548061A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH623776A CH611938A5 (xx) 1976-05-19 1976-05-19

Publications (1)

Publication Number Publication Date
GB1548061A true GB1548061A (en) 1979-07-04

Family

ID=4306421

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20857/77A Expired GB1548061A (en) 1976-05-19 1977-05-18 Method and apparatus for forming a deposit by means of a glow discharge

Country Status (11)

Country Link
US (1) US4116791A (xx)
JP (1) JPS608303B2 (xx)
AT (1) AT354214B (xx)
BE (1) BE854816A (xx)
CH (1) CH611938A5 (xx)
DE (1) DE2722708A1 (xx)
FR (1) FR2352393A1 (xx)
GB (1) GB1548061A (xx)
IT (1) IT1085894B (xx)
NL (1) NL7705483A (xx)
SE (1) SE7705766L (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150599A (en) * 1983-11-30 1985-07-03 Ppg Industries Inc Deposition of oxide films by reactive magnetron sputtering
GB2282824A (en) * 1993-10-14 1995-04-19 Secr Defence Reinforcement particles pre-coated with metal matrix; particle-reinforced metal matrix composites

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JPS5723606Y2 (xx) * 1978-04-28 1982-05-22
GB2051877B (en) * 1979-04-09 1983-03-02 Vac Tec Syst Magnetically enhanced sputtering device and method
FR2507126A2 (fr) * 1980-06-06 1982-12-10 Stephanois Rech Mec Procede pour la fabrication d'une couche composite resistant a la fois au grippage, a l'abrasion, a la corrosion et a la fatigue par contraintes alternees, et couche composite ainsi obtenue
JPS5778519A (en) * 1980-11-05 1982-05-17 Citizen Watch Co Ltd Production of electrochromic display element
DE3107914A1 (de) * 1981-03-02 1982-09-16 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung
FR2501727A1 (fr) * 1981-03-13 1982-09-17 Vide Traitement Procede de traitements thermochimiques de metaux par bombardement ionique
EP0084971B2 (en) * 1982-01-26 1990-07-18 Materials Research Corporation A method for reactive bias sputtering
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
EP0090067B2 (de) * 1982-03-31 1991-03-20 Ibm Deutschland Gmbh Reaktor für das reaktive Ionenätzen und Ätzverfahren
FR2528452B1 (fr) * 1982-06-11 1985-12-20 Vide Traitement Procede et dispositif pour la realisation de depots metalliques ou de composes metalliques, a la surface d'une piece en un materiau electriquement conducteur
WO1984004110A1 (en) * 1983-04-18 1984-10-25 Battelle Development Corp HARD LAYER FORMED BY INCORPORATING NITROGEN INTO Mo OU W METAL AND METHOD FOR OBTAINING THIS LAYER
US4420386A (en) * 1983-04-22 1983-12-13 White Engineering Corporation Method for pure ion plating using magnetic fields
US4468309A (en) * 1983-04-22 1984-08-28 White Engineering Corporation Method for resisting galling
US4520268A (en) * 1983-05-26 1985-05-28 Pauline Y. Lau Method and apparatus for introducing normally solid materials into substrate surfaces
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
US4933058A (en) * 1986-01-23 1990-06-12 The Gillette Company Formation of hard coatings on cutting edges
US4774437A (en) * 1986-02-28 1988-09-27 Varian Associates, Inc. Inverted re-entrant magnetron ion source
US4826365A (en) * 1988-01-20 1989-05-02 White Engineering Corporation Material-working tools and method for lubricating
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
DE3941797A1 (de) * 1989-12-19 1991-06-20 Leybold Ag Belag, bestehend aus einem optisch wirkenden schichtsystem, fuer substrate, wobei das schichtsystem insbesondere eine hohe antireflexwirkung aufweist, und verfahren zur herstellung des belags
DE3941795A1 (de) * 1989-12-19 1991-06-20 Leybold Ag Optisch wirkende schicht fuer substrate, die insbesondere eine hohe antireflexwirkung aufweist, und verfahren zur herstellung der schicht
CA2061119C (en) * 1991-04-19 1998-02-03 Pei-Ing P. Lee Method of depositing conductors in high aspect ratio apertures
KR950000906B1 (ko) * 1991-08-02 1995-02-03 니찌덴 아넬바 가부시기가이샤 스퍼터링장치
US5458759A (en) * 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
US5300813A (en) 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5411600A (en) * 1992-06-03 1995-05-02 Eastman Kodak Company Ultrathin film thermocouples and method of manufacture
DE4434428A1 (de) * 1994-09-27 1996-03-28 Widia Gmbh Verbundkörper, Verwendung dieses Verbundkörpers und Verfahren zu seiner Herstellung
US5859404A (en) * 1995-10-12 1999-01-12 Hughes Electronics Corporation Method and apparatus for plasma processing a workpiece in an enveloping plasma
GB2306510B (en) * 1995-11-02 1999-06-23 Univ Surrey Modification of metal surfaces
DE19609804C1 (de) * 1996-03-13 1997-07-31 Bosch Gmbh Robert Einrichtung, ihre Verwendung und ihr Betrieb zum Vakuumbeschichten von Schüttgut
EP1135540B1 (de) * 1998-10-21 2002-03-13 Siemens Aktiengesellschaft Verfahren und vorrichtung zur reinigung eines erzeugnisses
CH697036A5 (de) † 1998-12-02 2008-03-31 Sulzer Metco Ag Verfahren zur Plasma-Oberflächenbehandlung von Substraten sowie Einrichtung zur Durchführung des Verfahrens.
US6352626B1 (en) 1999-04-19 2002-03-05 Von Zweck Heimart Sputter ion source for boron and other targets
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7320734B2 (en) 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7137354B2 (en) 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
JP4570233B2 (ja) * 2000-10-25 2010-10-27 株式会社アルバック 薄膜形成方法及びその形成装置
US6761804B2 (en) 2002-02-11 2004-07-13 Applied Materials, Inc. Inverted magnetron
SE526857C2 (sv) * 2003-12-22 2005-11-08 Seco Tools Ab Sätt att belägga ett skärverktyg med användning av reaktiv magnetronsputtering
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US7428915B2 (en) * 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US20070051388A1 (en) * 2005-09-06 2007-03-08 Applied Materials, Inc. Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
CN100483643C (zh) * 2006-07-13 2009-04-29 中芯国际集成电路制造(上海)有限公司 一种制作低介电常数层的新方法及其应用
WO2008089168A2 (en) * 2007-01-19 2008-07-24 Applied Materials, Inc. Plasma immersion chamber
US20090197015A1 (en) * 2007-12-25 2009-08-06 Applied Materials, Inc. Method and apparatus for controlling plasma uniformity
CN101851746A (zh) * 2009-04-03 2010-10-06 鸿富锦精密工业（深圳）有限公司 磁控式溅镀靶及磁控式溅镀系统
KR101975741B1 (ko) * 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 타깃 재료의 포장 방법 및 타깃의 장착 방법
CN103109344B (zh) * 2010-07-09 2016-02-10 欧瑞康先进科技股份公司 磁控管溅射设备
CN106816351B (zh) * 2017-01-20 2018-08-17 信利（惠州）智能显示有限公司 一种离子注入装置

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DE1465058B2 (de) * 1962-12-18 1971-07-29 Elektrophysikahsche Anstalt Bern hard Berghaus, Vaduz Verfahren zur eindiffusion von metallatomen in ein metalli sches werkstueck
US3351543A (en) * 1964-05-28 1967-11-07 Gen Electric Process of coating diamond with an adherent metal coating using cathode sputtering
FR1497957A (fr) * 1966-10-27 1967-10-13 Gen Precision Inc Appareil effectuant, simultanément ou non, un décapage et un revêtement par l'action d'ions
US3514388A (en) * 1968-03-18 1970-05-26 Automatic Fire Control Inc Ion metal plating of multiple parts
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CH264574A4 (de) * 1973-03-05 1977-04-29 Suwa Seikosha Kk Verfahren zum Plattieren von Uhrenteilen in einem Vakuumbehälter
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150599A (en) * 1983-11-30 1985-07-03 Ppg Industries Inc Deposition of oxide films by reactive magnetron sputtering
GB2282824A (en) * 1993-10-14 1995-04-19 Secr Defence Reinforcement particles pre-coated with metal matrix; particle-reinforced metal matrix composites

Also Published As

Publication number Publication date
IT1085894B (it) 1985-05-28
FR2352393A1 (fr) 1977-12-16
DE2722708A1 (de) 1977-12-08
CH611938A5 (xx) 1979-06-29
FR2352393B1 (xx) 1983-02-11
ATA352977A (de) 1979-05-15
SE7705766L (sv) 1977-11-20
JPS608303B2 (ja) 1985-03-01
AT354214B (de) 1979-12-27
NL7705483A (nl) 1977-11-22
JPS5310384A (en) 1978-01-30
BE854816A (fr) 1977-11-18
US4116791A (en) 1978-09-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee