SE511826C2 - Dikesisolering - Google Patents

Dikesisolering

Info

Publication number
SE511826C2
SE511826C2 SE9701126A SE9701126A SE511826C2 SE 511826 C2 SE511826 C2 SE 511826C2 SE 9701126 A SE9701126 A SE 9701126A SE 9701126 A SE9701126 A SE 9701126A SE 511826 C2 SE511826 C2 SE 511826C2
Authority
SE
Sweden
Prior art keywords
ditches
ditch
conductors
insulating
silicon
Prior art date
Application number
SE9701126A
Other languages
English (en)
Swedish (sv)
Other versions
SE9701126L (sv
SE9701126D0 (sv
Inventor
Anders Karl Sivert Soederbaerg
Nils Ola Oegren
Ernst Haakan Sjoedin
Olof Mikael Zackrisson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9701126A priority Critical patent/SE511826C2/sv
Publication of SE9701126D0 publication Critical patent/SE9701126D0/xx
Priority to TW086105727A priority patent/TW404000B/zh
Priority to AU67536/98A priority patent/AU6753698A/en
Priority to EP98912848A priority patent/EP1018155A1/en
Priority to CN98805411A priority patent/CN1113406C/zh
Priority to KR10-1999-7008656A priority patent/KR100374456B1/ko
Priority to PCT/SE1998/000508 priority patent/WO1998043292A1/en
Priority to CA002285273A priority patent/CA2285273A1/en
Priority to JP54555998A priority patent/JP2001519096A/ja
Priority to US09/045,819 priority patent/US5977609A/en
Publication of SE9701126L publication Critical patent/SE9701126L/
Publication of SE511826C2 publication Critical patent/SE511826C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
SE9701126A 1997-03-26 1997-03-26 Dikesisolering SE511826C2 (sv)

Priority Applications (10)

Application Number Priority Date Filing Date Title
SE9701126A SE511826C2 (sv) 1997-03-26 1997-03-26 Dikesisolering
TW086105727A TW404000B (en) 1997-03-26 1997-04-30 Trench isolation
JP54555998A JP2001519096A (ja) 1997-03-26 1998-03-20 トレンチ分離
CN98805411A CN1113406C (zh) 1997-03-26 1998-03-20 半导体元件之间的隔离槽结构及其制备方法
EP98912848A EP1018155A1 (en) 1997-03-26 1998-03-20 Trench isolation
AU67536/98A AU6753698A (en) 1997-03-26 1998-03-20 Trench isolation
KR10-1999-7008656A KR100374456B1 (ko) 1997-03-26 1998-03-20 절연 트렌치 및 이의 제조 방법
PCT/SE1998/000508 WO1998043292A1 (en) 1997-03-26 1998-03-20 Trench isolation
CA002285273A CA2285273A1 (en) 1997-03-26 1998-03-20 Trench isolation
US09/045,819 US5977609A (en) 1997-03-26 1998-03-23 Method and apparatus for insulating material using trenches

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9701126A SE511826C2 (sv) 1997-03-26 1997-03-26 Dikesisolering

Publications (3)

Publication Number Publication Date
SE9701126D0 SE9701126D0 (sv) 1997-03-26
SE9701126L SE9701126L (sv) 1998-09-27
SE511826C2 true SE511826C2 (sv) 1999-12-06

Family

ID=20406333

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9701126A SE511826C2 (sv) 1997-03-26 1997-03-26 Dikesisolering

Country Status (10)

Country Link
US (1) US5977609A (ja)
EP (1) EP1018155A1 (ja)
JP (1) JP2001519096A (ja)
KR (1) KR100374456B1 (ja)
CN (1) CN1113406C (ja)
AU (1) AU6753698A (ja)
CA (1) CA2285273A1 (ja)
SE (1) SE511826C2 (ja)
TW (1) TW404000B (ja)
WO (1) WO1998043292A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573565B2 (en) * 1999-07-28 2003-06-03 International Business Machines Corporation Method and structure for providing improved thermal conduction for silicon semiconductor devices
EP1213762A1 (fr) * 2000-12-05 2002-06-12 Koninklijke Philips Electronics N.V. Dispositif d'isolation d'un élement électrique
JP2007220718A (ja) * 2006-02-14 2007-08-30 Toyota Motor Corp 半導体基板、その製造方法、および半導体装置
FR2901407A1 (fr) * 2006-05-18 2007-11-23 Commissariat Energie Atomique Circuit integre sur substrat du type semiconducteur sur isolant, a evacuation laterale de la chaleur
US8866255B2 (en) 2008-03-12 2014-10-21 Infineon Technologies Austria Ag Semiconductor device with staggered oxide-filled trenches at edge region
US8809966B2 (en) 2008-03-12 2014-08-19 Infineon Technologies Ag Semiconductor device
JP5489791B2 (ja) 2010-03-10 2014-05-14 三菱電機株式会社 電力用半導体装置の製造方法
JP6115408B2 (ja) 2013-08-29 2017-04-19 三菱電機株式会社 半導体装置
US20160247879A1 (en) * 2015-02-23 2016-08-25 Polar Semiconductor, Llc Trench semiconductor device layout configurations
WO2019187789A1 (ja) * 2018-03-27 2019-10-03 パナソニック株式会社 窒化物半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185936A (ja) * 1988-01-21 1989-07-25 Fujitsu Ltd 半導体装置
GB2226445B (en) * 1988-07-06 1992-07-15 Plessey Co Plc Silicon integrated circuit
US5561073A (en) * 1992-03-13 1996-10-01 Jerome; Rick C. Method of fabricating an isolation trench for analog bipolar devices in harsh environments
KR950021600A (ko) * 1993-12-09 1995-07-26 가나이 쯔또무 반도체 집적회로장치 및 그 제조방법
JPH07297273A (ja) * 1994-04-20 1995-11-10 Hitachi Ltd 半導体集積回路装置
US5614750A (en) * 1995-06-29 1997-03-25 Northern Telecom Limited Buried layer contact for an integrated circuit structure

Also Published As

Publication number Publication date
KR20010005592A (ko) 2001-01-15
US5977609A (en) 1999-11-02
SE9701126L (sv) 1998-09-27
CN1113406C (zh) 2003-07-02
KR100374456B1 (ko) 2003-03-04
SE9701126D0 (sv) 1997-03-26
EP1018155A1 (en) 2000-07-12
CN1257608A (zh) 2000-06-21
AU6753698A (en) 1998-10-20
TW404000B (en) 2000-09-01
WO1998043292A1 (en) 1998-10-01
CA2285273A1 (en) 1998-10-01
JP2001519096A (ja) 2001-10-16

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