SE457303B - Halvledaranordning samt foerfarande foer framstaellning av densamma - Google Patents
Halvledaranordning samt foerfarande foer framstaellning av densammaInfo
- Publication number
- SE457303B SE457303B SE8403852A SE8403852A SE457303B SE 457303 B SE457303 B SE 457303B SE 8403852 A SE8403852 A SE 8403852A SE 8403852 A SE8403852 A SE 8403852A SE 457303 B SE457303 B SE 457303B
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- conductivity
- type
- area
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 238000000034 method Methods 0.000 title claims description 4
- 230000007704 transition Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 6
- 230000002452 interceptive effect Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000012938 design process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000282461 Canis lupus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8322338A IT1212767B (it) | 1983-07-29 | 1983-07-29 | Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE8403852D0 SE8403852D0 (sv) | 1984-07-25 |
| SE8403852L SE8403852L (sv) | 1985-01-30 |
| SE457303B true SE457303B (sv) | 1988-12-12 |
Family
ID=11194880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8403852A SE457303B (sv) | 1983-07-29 | 1984-07-25 | Halvledaranordning samt foerfarande foer framstaellning av densamma |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4631561A (pt) |
| JP (1) | JPH0736440B2 (pt) |
| KR (1) | KR920005539B1 (pt) |
| BR (1) | BR8403468A (pt) |
| CA (1) | CA1218759A (pt) |
| DE (1) | DE3428067C2 (pt) |
| ES (1) | ES8605126A1 (pt) |
| FR (1) | FR2550013B1 (pt) |
| GB (1) | GB2144267B (pt) |
| IT (1) | IT1212767B (pt) |
| SE (1) | SE457303B (pt) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5083185A (en) * | 1985-02-15 | 1992-01-21 | Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry | Surge absorption device |
| US4705322A (en) * | 1985-07-05 | 1987-11-10 | American Telephone And Telegraph Company, At&T Bell Laboratories | Protection of inductive load switching transistors from inductive surge created overvoltage conditions |
| IT1186337B (it) * | 1985-10-29 | 1987-11-26 | Sgs Microelettronica Spa | Dispositivo elettronico per la protezione di circuiti integrati da cariche elettrostatiche,e procedimento per la sua fabbricazione |
| JPS62110435A (ja) * | 1985-11-04 | 1987-05-21 | シ−メンス、アクチエンゲゼルシヤフト | 加入者線の過電圧保護用集積回路装置 |
| US4766469A (en) * | 1986-01-06 | 1988-08-23 | Siliconix Incorporated | Integrated buried zener diode and temperature compensation transistor |
| JPH0666462B2 (ja) * | 1987-12-21 | 1994-08-24 | 日本電気株式会社 | 半導体保護素子 |
| US4969027A (en) * | 1988-07-18 | 1990-11-06 | General Electric Company | Power bipolar transistor device with integral antisaturation diode |
| GB2221088B (en) * | 1988-07-22 | 1992-02-26 | Texas Instruments Ltd | A semiconductor switching device |
| US5285100A (en) * | 1988-07-22 | 1994-02-08 | Texas Instruments Incorporated | Semiconductor switching device |
| US5072273A (en) * | 1990-05-04 | 1991-12-10 | David Sarnoff Research Center, Inc. | Low trigger voltage SCR protection device and structure |
| US5274262A (en) * | 1989-05-17 | 1993-12-28 | David Sarnoff Research Center, Inc. | SCR protection structure and circuit with reduced trigger voltage |
| JP2551152B2 (ja) * | 1989-06-29 | 1996-11-06 | 富士電機株式会社 | Ｍｏｓコントロールサイリスタ |
| US5240865A (en) * | 1990-07-30 | 1993-08-31 | Texas Instruments Incorporated | Method of forming a thyristor on an SOI substrate |
| US5172208A (en) * | 1990-07-30 | 1992-12-15 | Texas Instruments Incorporated | Thyristor |
| JPH0485963A (ja) * | 1990-07-30 | 1992-03-18 | Nec Corp | 半導体保護素子 |
| JPH077837B2 (ja) * | 1990-11-29 | 1995-01-30 | 工業技術院長 | サージ防護デバイス |
| JPH0793424B2 (ja) * | 1992-03-27 | 1995-10-09 | 工業技術院長 | サージ防護デバイス |
| US5600160A (en) * | 1993-04-14 | 1997-02-04 | Hvistendahl; Douglas D. | Multichannel field effect device |
| US5602404A (en) * | 1995-01-18 | 1997-02-11 | National Semiconductor Corporation | Low voltage triggering silicon controlled rectifier structures for ESD protection |
| US5610079A (en) * | 1995-06-19 | 1997-03-11 | Reliance Electric Industrial Company | Self-biased moat for parasitic current suppression in integrated circuits |
| US5747834A (en) * | 1995-09-29 | 1998-05-05 | Texas Instruments Inc | Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3146135A (en) * | 1959-05-11 | 1964-08-25 | Clevite Corp | Four layer semiconductive device |
| GB1030050A (en) * | 1963-11-13 | 1966-05-18 | Motorola Inc | Punchthrough breakdown rectifier |
| US3236698A (en) * | 1964-04-08 | 1966-02-22 | Clevite Corp | Semiconductive device and method of making the same |
| GB1232812A (pt) * | 1968-02-02 | 1971-05-19 | ||
| GB1365392A (en) * | 1971-02-23 | 1974-09-04 | Microsystems Int Ltd | Semiconductor switching device |
| US3735210A (en) * | 1971-06-07 | 1973-05-22 | Rca Corp | Zener diode for monolithic integrated circuits |
| BE787597A (fr) * | 1971-08-16 | 1973-02-16 | Siemens Ag | Thyristor |
| US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
| DE2310570C3 (de) * | 1973-03-02 | 1980-08-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines überkopfzündfesten Thyristors |
| JPS50782A (pt) * | 1973-05-02 | 1975-01-07 | ||
| JPS502482A (pt) * | 1973-05-08 | 1975-01-11 | ||
| JPS508486A (pt) * | 1973-05-21 | 1975-01-28 | ||
| DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
| JPS52104075A (en) * | 1976-02-27 | 1977-09-01 | Toshiba Corp | Semiconductor element |
| JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
| DE2928685A1 (de) * | 1978-07-20 | 1980-01-31 | Electric Power Res Inst | Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor |
| YU43752B (en) * | 1978-10-16 | 1989-12-31 | Marko Petrovic | Transistorized voltage limiter |
| GB2088634B (en) * | 1980-12-03 | 1984-08-15 | Rca Corp | Protection circuit for integrated circuit devices |
-
1983
- 1983-07-29 IT IT8322338A patent/IT1212767B/it active
-
1984
- 1984-07-09 ES ES534128A patent/ES8605126A1/es not_active Expired
- 1984-07-11 BR BR8403468A patent/BR8403468A/pt not_active IP Right Cessation
- 1984-07-18 GB GB08418287A patent/GB2144267B/en not_active Expired
- 1984-07-18 KR KR1019840004203A patent/KR920005539B1/ko not_active IP Right Cessation
- 1984-07-23 US US06/633,434 patent/US4631561A/en not_active Expired - Lifetime
- 1984-07-25 SE SE8403852A patent/SE457303B/sv not_active IP Right Cessation
- 1984-07-26 FR FR8411874A patent/FR2550013B1/fr not_active Expired
- 1984-07-27 CA CA000459900A patent/CA1218759A/en not_active Expired
- 1984-07-27 JP JP59155706A patent/JPH0736440B2/ja not_active Expired - Lifetime
- 1984-07-30 DE DE3428067A patent/DE3428067C2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2144267B (en) | 1987-04-23 |
| KR850000815A (ko) | 1985-03-09 |
| DE3428067A1 (de) | 1985-02-07 |
| CA1218759A (en) | 1987-03-03 |
| SE8403852L (sv) | 1985-01-30 |
| GB8418287D0 (en) | 1984-08-22 |
| IT8322338A0 (it) | 1983-07-29 |
| ES8605126A1 (es) | 1986-03-16 |
| KR920005539B1 (ko) | 1992-07-06 |
| JPH0736440B2 (ja) | 1995-04-19 |
| IT1212767B (it) | 1989-11-30 |
| GB2144267A (en) | 1985-02-27 |
| FR2550013B1 (fr) | 1987-08-07 |
| FR2550013A1 (fr) | 1985-02-01 |
| ES534128A0 (es) | 1986-03-16 |
| DE3428067C2 (de) | 1994-02-17 |
| SE8403852D0 (sv) | 1984-07-25 |
| US4631561A (en) | 1986-12-23 |
| JPS6057668A (ja) | 1985-04-03 |
| BR8403468A (pt) | 1985-06-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAL | Patent in force |
Ref document number: 8403852-0 Format of ref document f/p: F |
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| NUG | Patent has lapsed |