SE8403852L - Overspenningsdempare av halvledartyp med en paverkningsspenning, som kan forutbestemmas noggrant - Google Patents

Overspenningsdempare av halvledartyp med en paverkningsspenning, som kan forutbestemmas noggrant

Info

Publication number
SE8403852L
SE8403852L SE8403852A SE8403852A SE8403852L SE 8403852 L SE8403852 L SE 8403852L SE 8403852 A SE8403852 A SE 8403852A SE 8403852 A SE8403852 A SE 8403852A SE 8403852 L SE8403852 L SE 8403852L
Authority
SE
Sweden
Prior art keywords
region
attenuators
output voltage
power output
accurately predetermined
Prior art date
Application number
SE8403852A
Other languages
Unknown language ( )
English (en)
Other versions
SE457303B (sv
SE8403852D0 (sv
Inventor
M Foroni
F Bertotti
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of SE8403852D0 publication Critical patent/SE8403852D0/sv
Publication of SE8403852L publication Critical patent/SE8403852L/sv
Publication of SE457303B publication Critical patent/SE457303B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
SE8403852A 1983-07-29 1984-07-25 Halvledaranordning samt foerfarande foer framstaellning av densamma SE457303B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8322338A IT1212767B (it) 1983-07-29 1983-07-29 Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.

Publications (3)

Publication Number Publication Date
SE8403852D0 SE8403852D0 (sv) 1984-07-25
SE8403852L true SE8403852L (sv) 1985-01-30
SE457303B SE457303B (sv) 1988-12-12

Family

ID=11194880

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8403852A SE457303B (sv) 1983-07-29 1984-07-25 Halvledaranordning samt foerfarande foer framstaellning av densamma

Country Status (11)

Country Link
US (1) US4631561A (sv)
JP (1) JPH0736440B2 (sv)
KR (1) KR920005539B1 (sv)
BR (1) BR8403468A (sv)
CA (1) CA1218759A (sv)
DE (1) DE3428067C2 (sv)
ES (1) ES8605126A1 (sv)
FR (1) FR2550013B1 (sv)
GB (1) GB2144267B (sv)
IT (1) IT1212767B (sv)
SE (1) SE457303B (sv)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083185A (en) * 1985-02-15 1992-01-21 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Surge absorption device
US4705322A (en) * 1985-07-05 1987-11-10 American Telephone And Telegraph Company, At&T Bell Laboratories Protection of inductive load switching transistors from inductive surge created overvoltage conditions
IT1186337B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico per la protezione di circuiti integrati da cariche elettrostatiche,e procedimento per la sua fabbricazione
JPS62110435A (ja) * 1985-11-04 1987-05-21 シ−メンス、アクチエンゲゼルシヤフト 加入者線の過電圧保護用集積回路装置
US4766469A (en) * 1986-01-06 1988-08-23 Siliconix Incorporated Integrated buried zener diode and temperature compensation transistor
JPH0666462B2 (ja) * 1987-12-21 1994-08-24 日本電気株式会社 半導体保護素子
US4969027A (en) * 1988-07-18 1990-11-06 General Electric Company Power bipolar transistor device with integral antisaturation diode
GB2221088B (en) * 1988-07-22 1992-02-26 Texas Instruments Ltd A semiconductor switching device
US5285100A (en) * 1988-07-22 1994-02-08 Texas Instruments Incorporated Semiconductor switching device
US5072273A (en) * 1990-05-04 1991-12-10 David Sarnoff Research Center, Inc. Low trigger voltage SCR protection device and structure
US5274262A (en) * 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
JP2551152B2 (ja) * 1989-06-29 1996-11-06 富士電機株式会社 Ｍｏｓコントロールサイリスタ
US5240865A (en) * 1990-07-30 1993-08-31 Texas Instruments Incorporated Method of forming a thyristor on an SOI substrate
US5172208A (en) * 1990-07-30 1992-12-15 Texas Instruments Incorporated Thyristor
JPH0485963A (ja) * 1990-07-30 1992-03-18 Nec Corp 半導体保護素子
JPH077837B2 (ja) * 1990-11-29 1995-01-30 工業技術院長 サージ防護デバイス
JPH0793424B2 (ja) * 1992-03-27 1995-10-09 工業技術院長 サージ防護デバイス
US5600160A (en) * 1993-04-14 1997-02-04 Hvistendahl; Douglas D. Multichannel field effect device
US5602404A (en) * 1995-01-18 1997-02-11 National Semiconductor Corporation Low voltage triggering silicon controlled rectifier structures for ESD protection
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US5747834A (en) * 1995-09-29 1998-05-05 Texas Instruments Inc Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3146135A (en) * 1959-05-11 1964-08-25 Clevite Corp Four layer semiconductive device
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
US3236698A (en) * 1964-04-08 1966-02-22 Clevite Corp Semiconductive device and method of making the same
GB1232812A (sv) * 1968-02-02 1971-05-19
GB1365392A (en) * 1971-02-23 1974-09-04 Microsystems Int Ltd Semiconductor switching device
US3735210A (en) * 1971-06-07 1973-05-22 Rca Corp Zener diode for monolithic integrated circuits
BE787597A (fr) * 1971-08-16 1973-02-16 Siemens Ag Thyristor
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
DE2310570C3 (de) * 1973-03-02 1980-08-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines überkopfzündfesten Thyristors
JPS50782A (sv) * 1973-05-02 1975-01-07
JPS502482A (sv) * 1973-05-08 1975-01-11
JPS508486A (sv) * 1973-05-21 1975-01-28
DE2506102C3 (de) * 1975-02-13 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Halbleitergleichrichter
JPS52104075A (en) * 1976-02-27 1977-09-01 Toshiba Corp Semiconductor element
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor
YU43752B (en) * 1978-10-16 1989-12-31 Marko Petrovic Transistorized voltage limiter
GB2088634B (en) * 1980-12-03 1984-08-15 Rca Corp Protection circuit for integrated circuit devices

Also Published As

Publication number Publication date
GB2144267B (en) 1987-04-23
KR850000815A (ko) 1985-03-09
SE457303B (sv) 1988-12-12
DE3428067A1 (de) 1985-02-07
CA1218759A (en) 1987-03-03
GB8418287D0 (en) 1984-08-22
IT8322338A0 (it) 1983-07-29
ES8605126A1 (es) 1986-03-16
KR920005539B1 (ko) 1992-07-06
JPH0736440B2 (ja) 1995-04-19
IT1212767B (it) 1989-11-30
GB2144267A (en) 1985-02-27
FR2550013B1 (fr) 1987-08-07
FR2550013A1 (fr) 1985-02-01
ES534128A0 (es) 1986-03-16
DE3428067C2 (de) 1994-02-17
SE8403852D0 (sv) 1984-07-25
US4631561A (en) 1986-12-23
JPS6057668A (ja) 1985-04-03
BR8403468A (pt) 1985-06-25

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