IT8322338A0 - Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. - Google Patents

Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.

Info

Publication number
IT8322338A0
IT8322338A0 IT8322338A IT2233883A IT8322338A0 IT 8322338 A0 IT8322338 A0 IT 8322338A0 IT 8322338 A IT8322338 A IT 8322338A IT 2233883 A IT2233883 A IT 2233883A IT 8322338 A0 IT8322338 A0 IT 8322338A0
Authority
IT
Italy
Prior art keywords
precision
trigger voltage
surge suppressor
semiconductor surge
predeterminable
Prior art date
Application number
IT8322338A
Other languages
English (en)
Other versions
IT1212767B (it
Inventor
Mario Foroni
Franco Bertotti
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of IT8322338A0 publication Critical patent/IT8322338A0/it
Priority to IT8322338A priority Critical patent/IT1212767B/it
Priority to ES534128A priority patent/ES8605126A1/es
Priority to BR8403468A priority patent/BR8403468A/pt
Priority to KR1019840004203A priority patent/KR920005539B1/ko
Priority to GB08418287A priority patent/GB2144267B/en
Priority to US06/633,434 priority patent/US4631561A/en
Priority to SE8403852A priority patent/SE457303B/sv
Priority to FR8411874A priority patent/FR2550013B1/fr
Priority to CA000459900A priority patent/CA1218759A/en
Priority to JP59155706A priority patent/JPH0736440B2/ja
Priority to DE3428067A priority patent/DE3428067C2/de
Application granted granted Critical
Publication of IT1212767B publication Critical patent/IT1212767B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT8322338A 1983-07-29 1983-07-29 Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. IT1212767B (it)

Priority Applications (11)

Application Number Priority Date Filing Date Title
IT8322338A IT1212767B (it) 1983-07-29 1983-07-29 Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.
ES534128A ES8605126A1 (es) 1983-07-29 1984-07-09 Perfeccionamientos en los sistemas supresores de sobretensiones y metodo de fabricacion correspondiente
BR8403468A BR8403468A (pt) 1983-07-29 1984-07-11 Dispositivo com semicondutor de dois terminais e processo para sua fabricacao
GB08418287A GB2144267B (en) 1983-07-29 1984-07-18 Improvements in or relating to semiconductor overvoltage suppressors
KR1019840004203A KR920005539B1 (ko) 1983-07-29 1984-07-18 정확히 설정된 동작전압을 갖는 반도체 과전압 억제기 및 그의 제조방법
US06/633,434 US4631561A (en) 1983-07-29 1984-07-23 Semiconductor overvoltage suppressor with accurately determined striking potential
SE8403852A SE457303B (sv) 1983-07-29 1984-07-25 Halvledaranordning samt foerfarande foer framstaellning av densamma
FR8411874A FR2550013B1 (fr) 1983-07-29 1984-07-26 Dispositif pour supprimer les surtensions a semi-conducteurs, dont la tension d'amorcage peut etre predeterminee avec precision, et son procede de fabrication
CA000459900A CA1218759A (en) 1983-07-29 1984-07-27 Semiconductor overvoltage suppressor with exactly adjustable triggering voltage
JP59155706A JPH0736440B2 (ja) 1983-07-29 1984-07-27 半導体装置及びその製造方法
DE3428067A DE3428067C2 (de) 1983-07-29 1984-07-30 Halbleiter-Überspannungsunterdrücker mit genau vorherbestimmbarer Einsatzspannung und Verfahren zur Herstellung desselben

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8322338A IT1212767B (it) 1983-07-29 1983-07-29 Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.

Publications (2)

Publication Number Publication Date
IT8322338A0 true IT8322338A0 (it) 1983-07-29
IT1212767B IT1212767B (it) 1989-11-30

Family

ID=11194880

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8322338A IT1212767B (it) 1983-07-29 1983-07-29 Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.

Country Status (11)

Country Link
US (1) US4631561A (it)
JP (1) JPH0736440B2 (it)
KR (1) KR920005539B1 (it)
BR (1) BR8403468A (it)
CA (1) CA1218759A (it)
DE (1) DE3428067C2 (it)
ES (1) ES8605126A1 (it)
FR (1) FR2550013B1 (it)
GB (1) GB2144267B (it)
IT (1) IT1212767B (it)
SE (1) SE457303B (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083185A (en) * 1985-02-15 1992-01-21 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Surge absorption device
US4705322A (en) * 1985-07-05 1987-11-10 American Telephone And Telegraph Company, At&T Bell Laboratories Protection of inductive load switching transistors from inductive surge created overvoltage conditions
IT1186337B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico per la protezione di circuiti integrati da cariche elettrostatiche,e procedimento per la sua fabbricazione
JPS62110435A (ja) * 1985-11-04 1987-05-21 シ−メンス、アクチエンゲゼルシヤフト 加入者線の過電圧保護用集積回路装置
US4766469A (en) * 1986-01-06 1988-08-23 Siliconix Incorporated Integrated buried zener diode and temperature compensation transistor
JPH0666462B2 (ja) * 1987-12-21 1994-08-24 日本電気株式会社 半導体保護素子
US4969027A (en) * 1988-07-18 1990-11-06 General Electric Company Power bipolar transistor device with integral antisaturation diode
GB2221088B (en) * 1988-07-22 1992-02-26 Texas Instruments Ltd A semiconductor switching device
US5285100A (en) * 1988-07-22 1994-02-08 Texas Instruments Incorporated Semiconductor switching device
US5072273A (en) * 1990-05-04 1991-12-10 David Sarnoff Research Center, Inc. Low trigger voltage SCR protection device and structure
US5274262A (en) * 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
JP2551152B2 (ja) * 1989-06-29 1996-11-06 富士電機株式会社 Ｍｏｓコントロールサイリスタ
US5240865A (en) * 1990-07-30 1993-08-31 Texas Instruments Incorporated Method of forming a thyristor on an SOI substrate
US5172208A (en) * 1990-07-30 1992-12-15 Texas Instruments Incorporated Thyristor
JPH0485963A (ja) * 1990-07-30 1992-03-18 Nec Corp 半導体保護素子
JPH077837B2 (ja) * 1990-11-29 1995-01-30 工業技術院長 サージ防護デバイス
JPH0793424B2 (ja) * 1992-03-27 1995-10-09 工業技術院長 サージ防護デバイス
US5600160A (en) * 1993-04-14 1997-02-04 Hvistendahl; Douglas D. Multichannel field effect device
US5602404A (en) * 1995-01-18 1997-02-11 National Semiconductor Corporation Low voltage triggering silicon controlled rectifier structures for ESD protection
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US5747834A (en) * 1995-09-29 1998-05-05 Texas Instruments Inc Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3146135A (en) * 1959-05-11 1964-08-25 Clevite Corp Four layer semiconductive device
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
US3236698A (en) * 1964-04-08 1966-02-22 Clevite Corp Semiconductive device and method of making the same
GB1232812A (it) * 1968-02-02 1971-05-19
GB1365392A (en) * 1971-02-23 1974-09-04 Microsystems Int Ltd Semiconductor switching device
US3735210A (en) * 1971-06-07 1973-05-22 Rca Corp Zener diode for monolithic integrated circuits
BE787597A (fr) * 1971-08-16 1973-02-16 Siemens Ag Thyristor
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
DE2310570C3 (de) * 1973-03-02 1980-08-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines überkopfzündfesten Thyristors
JPS50782A (it) * 1973-05-02 1975-01-07
JPS502482A (it) * 1973-05-08 1975-01-11
JPS508486A (it) * 1973-05-21 1975-01-28
DE2506102C3 (de) * 1975-02-13 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Halbleitergleichrichter
JPS52104075A (en) * 1976-02-27 1977-09-01 Toshiba Corp Semiconductor element
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor
YU43752B (en) * 1978-10-16 1989-12-31 Marko Petrovic Transistorized voltage limiter
GB2088634B (en) * 1980-12-03 1984-08-15 Rca Corp Protection circuit for integrated circuit devices

Also Published As

Publication number Publication date
GB2144267B (en) 1987-04-23
KR850000815A (ko) 1985-03-09
SE457303B (sv) 1988-12-12
DE3428067A1 (de) 1985-02-07
CA1218759A (en) 1987-03-03
SE8403852L (sv) 1985-01-30
GB8418287D0 (en) 1984-08-22
ES8605126A1 (es) 1986-03-16
KR920005539B1 (ko) 1992-07-06
JPH0736440B2 (ja) 1995-04-19
IT1212767B (it) 1989-11-30
GB2144267A (en) 1985-02-27
FR2550013B1 (fr) 1987-08-07
FR2550013A1 (fr) 1985-02-01
ES534128A0 (es) 1986-03-16
DE3428067C2 (de) 1994-02-17
SE8403852D0 (sv) 1984-07-25
US4631561A (en) 1986-12-23
JPS6057668A (ja) 1985-04-03
BR8403468A (pt) 1985-06-25

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970730