SE0101848D0 - A method concerning a junction barrier Schottky diode, such a diode and use thereof - Google Patents

A method concerning a junction barrier Schottky diode, such a diode and use thereof

Info

Publication number
SE0101848D0
SE0101848D0 SE0101848A SE0101848A SE0101848D0 SE 0101848 D0 SE0101848 D0 SE 0101848D0 SE 0101848 A SE0101848 A SE 0101848A SE 0101848 A SE0101848 A SE 0101848A SE 0101848 D0 SE0101848 D0 SE 0101848D0
Authority
SE
Sweden
Prior art keywords
diode
junction barrier
barrier schottky
method regarding
schottky diode
Prior art date
Application number
SE0101848A
Other languages
English (en)
Swedish (sv)
Inventor
Fanny Dahlqvist
Heinz Lendenmann
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE0101848A priority Critical patent/SE0101848D0/xx
Publication of SE0101848D0 publication Critical patent/SE0101848D0/xx
Priority to JP2003502878A priority patent/JP2004528728A/ja
Priority to EP02736346A priority patent/EP1390973A1/en
Priority to PCT/SE2002/000994 priority patent/WO2002099869A1/en
Priority to JP2009230498A priority patent/JP5554042B2/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

Landscapes

  • Electrodes Of Semiconductors (AREA)
SE0101848A 2001-05-25 2001-05-25 A method concerning a junction barrier Schottky diode, such a diode and use thereof SE0101848D0 (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE0101848A SE0101848D0 (sv) 2001-05-25 2001-05-25 A method concerning a junction barrier Schottky diode, such a diode and use thereof
JP2003502878A JP2004528728A (ja) 2001-05-25 2002-05-24 ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法
EP02736346A EP1390973A1 (en) 2001-05-25 2002-05-24 A method concerning a junction barrier schottky diode, such a diode and use thereof
PCT/SE2002/000994 WO2002099869A1 (en) 2001-05-25 2002-05-24 A method concerning a junction barrier schottky diode, such a diode and use thereof
JP2009230498A JP5554042B2 (ja) 2001-05-25 2009-10-02 ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0101848A SE0101848D0 (sv) 2001-05-25 2001-05-25 A method concerning a junction barrier Schottky diode, such a diode and use thereof

Publications (1)

Publication Number Publication Date
SE0101848D0 true SE0101848D0 (sv) 2001-05-25

Family

ID=20284243

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0101848A SE0101848D0 (sv) 2001-05-25 2001-05-25 A method concerning a junction barrier Schottky diode, such a diode and use thereof

Country Status (4)

Country Link
EP (1) EP1390973A1 (https=)
JP (2) JP2004528728A (https=)
SE (1) SE0101848D0 (https=)
WO (1) WO2002099869A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE0101848D0 (sv) * 2001-05-25 2001-05-25 Abb Research Ltd A method concerning a junction barrier Schottky diode, such a diode and use thereof
DE10235198B4 (de) * 2001-08-02 2011-08-11 Fuji Electric Systems Co., Ltd. Leistungs-Halbleitergleichrichter mit ringförmigen Gräben
JP2006352006A (ja) * 2005-06-20 2006-12-28 Sumitomo Electric Ind Ltd 整流素子およびその製造方法
DE102005046707B3 (de) * 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN-Leistungsdiode
WO2007133123A1 (en) * 2006-05-12 2007-11-22 Cree Sweden Ab A semiconductor device
JP4939839B2 (ja) * 2006-05-30 2012-05-30 株式会社東芝 半導体整流素子
US7728403B2 (en) * 2006-05-31 2010-06-01 Cree Sweden Ab Semiconductor device
CN101431020B (zh) * 2007-11-09 2010-09-08 上海华虹Nec电子有限公司 T型多晶硅栅电极的制备方法
EP2154726A3 (en) * 2008-08-14 2010-05-26 Acreo AB A method for producing a JBS diode
DE102011003961B4 (de) * 2011-02-11 2023-07-27 Robert Bosch Gmbh Trench-Schottkydiode
JP5881322B2 (ja) * 2011-04-06 2016-03-09 ローム株式会社 半導体装置
JP2011142355A (ja) * 2011-04-21 2011-07-21 Sumitomo Electric Ind Ltd 整流素子
JP5999678B2 (ja) * 2011-12-28 2016-09-28 ローム株式会社 半導体装置および半導体装置の製造方法
JP6203074B2 (ja) 2014-02-17 2017-09-27 株式会社東芝 半導体装置およびその製造方法
JP2017045901A (ja) * 2015-08-27 2017-03-02 トヨタ自動車株式会社 還流ダイオードと車載用電源装置
JP6767705B2 (ja) 2016-04-28 2020-10-14 パナソニックＩｐマネジメント株式会社 半導体素子
CN109148605B (zh) * 2017-06-19 2022-02-18 比亚迪半导体股份有限公司 快恢复二极管及制备方法、电子设备
JP6827433B2 (ja) 2018-03-02 2021-02-10 株式会社東芝 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137368A (ja) * 1988-11-18 1990-05-25 Toshiba Corp 半導体整流装置
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
JP3468571B2 (ja) * 1994-03-17 2003-11-17 株式会社リコー 半導体装置
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
SE9700141D0 (sv) * 1997-01-20 1997-01-20 Abb Research Ltd A schottky diode of SiC and a method for production thereof
JP3467381B2 (ja) * 1997-05-22 2003-11-17 株式会社日立製作所 炭化けい素ダイオード
DE19756873A1 (de) * 1997-12-19 1999-07-01 Siemens Ag Elektrische Schaltungsanordnung zur Transformation von magnetischer Feldenergie in elektrische Feldenergie
JP4088852B2 (ja) * 1998-09-21 2008-05-21 関西電力株式会社 ＳｉＣショットキーダイオード
SE0101848D0 (sv) * 2001-05-25 2001-05-25 Abb Research Ltd A method concerning a junction barrier Schottky diode, such a diode and use thereof

Also Published As

Publication number Publication date
EP1390973A1 (en) 2004-02-25
JP2010050468A (ja) 2010-03-04
WO2002099869A1 (en) 2002-12-12
JP5554042B2 (ja) 2014-07-23
JP2004528728A (ja) 2004-09-16

Similar Documents

Publication Publication Date Title
SE0101848D0 (sv) A method concerning a junction barrier Schottky diode, such a diode and use thereof
Hudgins et al. An assessment of wide bandgap semiconductors for power devices
ATE375008T1 (de) Feldeffekttransistorstruktur und herstellungsverfahren
WO2010141237A3 (en) High voltage insulated gate bipolar transistors with minority carrier diverter
JP2008510294A5 (https=)
ATE371957T1 (de) Halbleiteranordnungen mit feldformungsgebieten
EP1315212A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
WO2003063204A3 (en) Igbt having thick buffer region
TW200731581A (en) Luminescent diode chip with expansion layer and procedure for its production
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
DE60045708D1 (de) Bipolarer transistor
TW200644087A (en) Asymmetric bidirectional transient voltage suppressor and method of forming same
Sung et al. Design and investigation of frequency capability of 15kV 4H-SiC IGBT
WO2007005844A3 (en) Schottky diode with improved surge capability
Sodhi et al. Integrated design environment for DC/DC converter FET optimization
DE60140879D1 (de) Halbleiter-led-bauelement und herstellungsverfahren
ATE378797T1 (de) Heizungseinrichtung mit zwei bereichen
EP1309010A3 (en) 3-5 group compound semiconductor and semiconductor device
Lee et al. Mixed-mode circuit simulation to characterize Ga 2 O 3 MOSFETs in different device structures
TW200633148A (en) Non-volatile semiconductor memory device and its manufacturing
Zuo et al. Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure
Strel'Chuk et al. Ideal 4H-SiC pn junction and its characteristic shunt
WO2004051752A3 (en) Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode
Roccaforte et al. Dual metal SiC Schottky rectifiers with low power dissipation
WO2007048387A3 (de) Halbleiterbauelement mit pn-übergang und verfahren zur herstellung desselben