SE0101848D0 - A method concerning a junction barrier Schottky diode, such a diode and use thereof - Google Patents

A method concerning a junction barrier Schottky diode, such a diode and use thereof

Info

Publication number
SE0101848D0
SE0101848D0 SE0101848A SE0101848A SE0101848D0 SE 0101848 D0 SE0101848 D0 SE 0101848D0 SE 0101848 A SE0101848 A SE 0101848A SE 0101848 A SE0101848 A SE 0101848A SE 0101848 D0 SE0101848 D0 SE 0101848D0
Authority
SE
Sweden
Prior art keywords
diode
junction barrier
barrier schottky
method regarding
schottky diode
Prior art date
Application number
SE0101848A
Other languages
English (en)
Swedish (sv)
Inventor
Fanny Dahlqvist
Heinz Lendenmann
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE0101848A priority Critical patent/SE0101848D0/xx
Publication of SE0101848D0 publication Critical patent/SE0101848D0/xx
Priority to JP2003502878A priority patent/JP2004528728A/ja
Priority to PCT/SE2002/000994 priority patent/WO2002099869A1/en
Priority to EP02736346A priority patent/EP1390973A1/en
Priority to JP2009230498A priority patent/JP5554042B2/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
SE0101848A 2001-05-25 2001-05-25 A method concerning a junction barrier Schottky diode, such a diode and use thereof SE0101848D0 (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE0101848A SE0101848D0 (sv) 2001-05-25 2001-05-25 A method concerning a junction barrier Schottky diode, such a diode and use thereof
JP2003502878A JP2004528728A (ja) 2001-05-25 2002-05-24 ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法
PCT/SE2002/000994 WO2002099869A1 (en) 2001-05-25 2002-05-24 A method concerning a junction barrier schottky diode, such a diode and use thereof
EP02736346A EP1390973A1 (en) 2001-05-25 2002-05-24 A method concerning a junction barrier schottky diode, such a diode and use thereof
JP2009230498A JP5554042B2 (ja) 2001-05-25 2009-10-02 ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0101848A SE0101848D0 (sv) 2001-05-25 2001-05-25 A method concerning a junction barrier Schottky diode, such a diode and use thereof

Publications (1)

Publication Number Publication Date
SE0101848D0 true SE0101848D0 (sv) 2001-05-25

Family

ID=20284243

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0101848A SE0101848D0 (sv) 2001-05-25 2001-05-25 A method concerning a junction barrier Schottky diode, such a diode and use thereof

Country Status (4)

Country Link
EP (1) EP1390973A1 (xx)
JP (2) JP2004528728A (xx)
SE (1) SE0101848D0 (xx)
WO (1) WO2002099869A1 (xx)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE0101848D0 (sv) * 2001-05-25 2001-05-25 Abb Research Ltd A method concerning a junction barrier Schottky diode, such a diode and use thereof
DE10235198B4 (de) * 2001-08-02 2011-08-11 Fuji Electric Systems Co., Ltd. Leistungs-Halbleitergleichrichter mit ringförmigen Gräben
JP2006352006A (ja) * 2005-06-20 2006-12-28 Sumitomo Electric Ind Ltd 整流素子およびその製造方法
DE102005046707B3 (de) * 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN-Leistungsdiode
US7863656B2 (en) 2006-05-12 2011-01-04 Cree Sweden Ab Semiconductor device
JP4939839B2 (ja) * 2006-05-30 2012-05-30 株式会社東芝 半導体整流素子
US7728403B2 (en) * 2006-05-31 2010-06-01 Cree Sweden Ab Semiconductor device
CN101431020B (zh) * 2007-11-09 2010-09-08 上海华虹Nec电子有限公司 T型多晶硅栅电极的制备方法
EP2154726A3 (en) * 2008-08-14 2010-05-26 Acreo AB A method for producing a JBS diode
DE102011003961B4 (de) * 2011-02-11 2023-07-27 Robert Bosch Gmbh Trench-Schottkydiode
JP5881322B2 (ja) * 2011-04-06 2016-03-09 ローム株式会社 半導体装置
JP2011142355A (ja) * 2011-04-21 2011-07-21 Sumitomo Electric Ind Ltd 整流素子
JP5999678B2 (ja) * 2011-12-28 2016-09-28 ローム株式会社 半導体装置および半導体装置の製造方法
JP6203074B2 (ja) 2014-02-17 2017-09-27 株式会社東芝 半導体装置およびその製造方法
JP2017045901A (ja) * 2015-08-27 2017-03-02 トヨタ自動車株式会社 還流ダイオードと車載用電源装置
JP6767705B2 (ja) 2016-04-28 2020-10-14 パナソニックＩｐマネジメント株式会社 半導体素子
CN109148605B (zh) * 2017-06-19 2022-02-18 比亚迪半导体股份有限公司 快恢复二极管及制备方法、电子设备
JP6827433B2 (ja) 2018-03-02 2021-02-10 株式会社東芝 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137368A (ja) * 1988-11-18 1990-05-25 Toshiba Corp 半導体整流装置
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
JP3468571B2 (ja) * 1994-03-17 2003-11-17 株式会社リコー 半導体装置
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
SE9700141D0 (sv) * 1997-01-20 1997-01-20 Abb Research Ltd A schottky diode of SiC and a method for production thereof
JP3467381B2 (ja) * 1997-05-22 2003-11-17 株式会社日立製作所 炭化けい素ダイオード
DE19756873A1 (de) * 1997-12-19 1999-07-01 Siemens Ag Elektrische Schaltungsanordnung zur Transformation von magnetischer Feldenergie in elektrische Feldenergie
JP4088852B2 (ja) * 1998-09-21 2008-05-21 関西電力株式会社 ＳｉＣショットキーダイオード
SE0101848D0 (sv) * 2001-05-25 2001-05-25 Abb Research Ltd A method concerning a junction barrier Schottky diode, such a diode and use thereof

Also Published As

Publication number Publication date
JP2004528728A (ja) 2004-09-16
EP1390973A1 (en) 2004-02-25
JP5554042B2 (ja) 2014-07-23
WO2002099869A1 (en) 2002-12-12
JP2010050468A (ja) 2010-03-04

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