SE0101848D0 - A method regarding a junction barrier Schottky diode, such a diode and its use - Google Patents

A method regarding a junction barrier Schottky diode, such a diode and its use

Info

Publication number
SE0101848D0
SE0101848D0 SE0101848A SE0101848A SE0101848D0 SE 0101848 D0 SE0101848 D0 SE 0101848D0 SE 0101848 A SE0101848 A SE 0101848A SE 0101848 A SE0101848 A SE 0101848A SE 0101848 D0 SE0101848 D0 SE 0101848D0
Authority
SE
Sweden
Prior art keywords
diode
junction barrier
barrier schottky
method regarding
schottky diode
Prior art date
Application number
SE0101848A
Other languages
Swedish (sv)
Inventor
Fanny Dahlqvist
Heinz Lendenmann
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE0101848A priority Critical patent/SE0101848D0/en
Publication of SE0101848D0 publication Critical patent/SE0101848D0/en
Priority to PCT/SE2002/000994 priority patent/WO2002099869A1/en
Priority to EP02736346A priority patent/EP1390973A1/en
Priority to JP2003502878A priority patent/JP2004528728A/en
Priority to JP2009230498A priority patent/JP5554042B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method for controlling the temperature dependence of a junction barrier Schottky diode of a semiconductor material having an energy gap between the valence band and the conduction band exceeding 2 eV provides for doing this when producing the diode by adjusting the on-state resistance of the grid portion of the diode during the production for obtaining a temperature dependence of the operation of the diode adapted to the intended use thereof.
SE0101848A 2001-05-25 2001-05-25 A method regarding a junction barrier Schottky diode, such a diode and its use SE0101848D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE0101848A SE0101848D0 (en) 2001-05-25 2001-05-25 A method regarding a junction barrier Schottky diode, such a diode and its use
PCT/SE2002/000994 WO2002099869A1 (en) 2001-05-25 2002-05-24 A method concerning a junction barrier schottky diode, such a diode and use thereof
EP02736346A EP1390973A1 (en) 2001-05-25 2002-05-24 A method concerning a junction barrier schottky diode, such a diode and use thereof
JP2003502878A JP2004528728A (en) 2001-05-25 2002-05-24 Method related to junction barrier Schottky diode, diode and method of using the same
JP2009230498A JP5554042B2 (en) 2001-05-25 2009-10-02 Junction barrier Schottky diode method, diode and method of use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0101848A SE0101848D0 (en) 2001-05-25 2001-05-25 A method regarding a junction barrier Schottky diode, such a diode and its use

Publications (1)

Publication Number Publication Date
SE0101848D0 true SE0101848D0 (en) 2001-05-25

Family

ID=20284243

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0101848A SE0101848D0 (en) 2001-05-25 2001-05-25 A method regarding a junction barrier Schottky diode, such a diode and its use

Country Status (4)

Country Link
EP (1) EP1390973A1 (en)
JP (2) JP2004528728A (en)
SE (1) SE0101848D0 (en)
WO (1) WO2002099869A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE0101848D0 (en) * 2001-05-25 2001-05-25 Abb Research Ltd A method regarding a junction barrier Schottky diode, such a diode and its use
DE10235198B4 (en) * 2001-08-02 2011-08-11 Fuji Electric Systems Co., Ltd. Power semiconductor rectifier with annular trenches
JP2006352006A (en) * 2005-06-20 2006-12-28 Sumitomo Electric Ind Ltd Rectifier element and manufacturing method thereof
DE102005046707B3 (en) * 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN power diode
US7863656B2 (en) 2006-05-12 2011-01-04 Cree Sweden Ab Semiconductor device
JP4939839B2 (en) * 2006-05-30 2012-05-30 株式会社東芝 Semiconductor rectifier
US7728403B2 (en) * 2006-05-31 2010-06-01 Cree Sweden Ab Semiconductor device
CN101431020B (en) * 2007-11-09 2010-09-08 上海华虹Nec电子有限公司 Production method of T type polysilicon gate electrode
EP2154726A3 (en) * 2008-08-14 2010-05-26 Acreo AB A method for producing a JBS diode
DE102011003961B4 (en) 2011-02-11 2023-07-27 Robert Bosch Gmbh Trench Schottky diode
JP5881322B2 (en) * 2011-04-06 2016-03-09 ローム株式会社 Semiconductor device
JP2011142355A (en) * 2011-04-21 2011-07-21 Sumitomo Electric Ind Ltd Rectifying element
JP5999678B2 (en) * 2011-12-28 2016-09-28 ローム株式会社 Semiconductor device and manufacturing method of semiconductor device
JP6203074B2 (en) 2014-02-17 2017-09-27 株式会社東芝 Semiconductor device and manufacturing method thereof
JP2017045901A (en) * 2015-08-27 2017-03-02 トヨタ自動車株式会社 Reflux diode and on-vehicle power supply device
JP6767705B2 (en) 2016-04-28 2020-10-14 パナソニックＩｐマネジメント株式会社 Semiconductor element
CN109148605B (en) * 2017-06-19 2022-02-18 比亚迪半导体股份有限公司 Fast recovery diode, preparation method and electronic equipment
JP6827433B2 (en) 2018-03-02 2021-02-10 株式会社東芝 Semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137368A (en) * 1988-11-18 1990-05-25 Toshiba Corp Semiconductor rectifier
JP2667477B2 (en) * 1988-12-02 1997-10-27 株式会社東芝 Schottky barrier diode
JPH0750791B2 (en) * 1989-09-20 1995-05-31 株式会社日立製作所 Semiconductor rectifier diode, power supply device using the same, and electronic computer
JP3468571B2 (en) * 1994-03-17 2003-11-17 株式会社リコー Semiconductor device
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
SE9700141D0 (en) * 1997-01-20 1997-01-20 Abb Research Ltd A schottky diode of SiC and a method of production thereof
JP3467381B2 (en) * 1997-05-22 2003-11-17 株式会社日立製作所 Silicon carbide diode
DE19756873A1 (en) * 1997-12-19 1999-07-01 Siemens Ag Electrical circuit arrangement for transforming magnetic field energy into electrical field energy
JP4088852B2 (en) * 1998-09-21 2008-05-21 関西電力株式会社 SiC Schottky diode
SE0101848D0 (en) * 2001-05-25 2001-05-25 Abb Research Ltd A method regarding a junction barrier Schottky diode, such a diode and its use

Also Published As

Publication number Publication date
JP2010050468A (en) 2010-03-04
JP5554042B2 (en) 2014-07-23
JP2004528728A (en) 2004-09-16
EP1390973A1 (en) 2004-02-25
WO2002099869A1 (en) 2002-12-12

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