DE60140879D1 - Halbleiter-led-bauelement und herstellungsverfahren - Google Patents

Halbleiter-led-bauelement und herstellungsverfahren

Info

Publication number
DE60140879D1
DE60140879D1 DE60140879T DE60140879T DE60140879D1 DE 60140879 D1 DE60140879 D1 DE 60140879D1 DE 60140879 T DE60140879 T DE 60140879T DE 60140879 T DE60140879 T DE 60140879T DE 60140879 D1 DE60140879 D1 DE 60140879D1
Authority
DE
Germany
Prior art keywords
semiconductor device
passivation layer
inxga1
layer
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140879T
Other languages
English (en)
Inventor
Chang-Tae Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
EpiValley Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
EpiValley Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd, EpiValley Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Application granted granted Critical
Publication of DE60140879D1 publication Critical patent/DE60140879D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Formation Of Insulating Films (AREA)
DE60140879T 2000-09-04 2001-09-04 Halbleiter-led-bauelement und herstellungsverfahren Expired - Lifetime DE60140879D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020000052169A KR100344103B1 (ko) 2000-09-04 2000-09-04 질화갈륨계 결정 보호막을 형성한 반도체 소자 및 그 제조방법
PCT/KR2001/001494 WO2002021605A1 (en) 2000-09-04 2001-09-04 The semiconductor led device and producing method

Publications (1)

Publication Number Publication Date
DE60140879D1 true DE60140879D1 (de) 2010-02-04

Family

ID=19687250

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140879T Expired - Lifetime DE60140879D1 (de) 2000-09-04 2001-09-04 Halbleiter-led-bauelement und herstellungsverfahren

Country Status (7)

Country Link
US (1) US7053417B2 (de)
EP (1) EP1320902B1 (de)
KR (1) KR100344103B1 (de)
AT (1) ATE453212T1 (de)
AU (1) AU2001286288A1 (de)
DE (1) DE60140879D1 (de)
WO (1) WO2002021605A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100497127B1 (ko) * 2002-09-05 2005-06-28 삼성전기주식회사 질화갈륨계 반도체 엘이디 소자
US7390535B2 (en) * 2003-07-03 2008-06-24 Aeromet Technologies, Inc. Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
KR101034055B1 (ko) * 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
WO2005015642A1 (ja) * 2003-08-08 2005-02-17 Sanken Electric Co., Ltd. 半導体装置及びその製造方法
DE102005010821B4 (de) * 2005-03-07 2007-01-25 Technische Universität Berlin Verfahren zum Herstellen eines Bauelements
JP4980594B2 (ja) * 2005-08-03 2012-07-18 京セラ株式会社 Ｐ型窒化ガリウム系化合物半導体の製造方法
CN101385145B (zh) 2006-01-05 2011-06-08 伊鲁米特克斯公司 用于引导来自led的光的分立光学装置
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
KR20100122485A (ko) 2008-02-08 2010-11-22 일루미텍스, 인크. 발광체층 쉐이핑을 위한 시스템 및 방법
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US9130026B2 (en) * 2013-09-03 2015-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Crystalline layer for passivation of III-N surface
US9425301B2 (en) 2014-04-30 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Sidewall passivation for HEMT devices
DE102017108435A1 (de) 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448633A (en) * 1982-11-29 1984-05-15 United Technologies Corporation Passivation of III-V semiconductor surfaces by plasma nitridation
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
FR2737342B1 (fr) * 1995-07-25 1997-08-22 Thomson Csf Composant semiconducteur avec dissipateur thermique integre
JP3009095B2 (ja) * 1995-10-27 2000-02-14 日亜化学工業株式会社 窒化物半導体発光素子
JP3675003B2 (ja) * 1995-10-27 2005-07-27 昭和電工株式会社 半導体発光素子
KR100267839B1 (ko) * 1995-11-06 2000-10-16 오가와 에이지 질화물 반도체 장치
JP3596171B2 (ja) * 1996-05-16 2004-12-02 豊田合成株式会社 ３族窒化物半導体発光素子
JP2941743B2 (ja) * 1996-06-05 1999-08-30 株式会社東芝 化合物半導体発光素子及びその製造方法
US5799028A (en) * 1996-07-18 1998-08-25 Sdl, Inc. Passivation and protection of a semiconductor surface
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
US6093952A (en) * 1999-03-31 2000-07-25 California Institute Of Technology Higher power gallium nitride schottky rectifier
US6812152B2 (en) * 2001-08-09 2004-11-02 Comlase Ab Method to obtain contamination free laser mirrors and passivation of these

Also Published As

Publication number Publication date
WO2002021605A1 (en) 2002-03-14
US7053417B2 (en) 2006-05-30
KR20020018871A (ko) 2002-03-09
US20040007786A1 (en) 2004-01-15
ATE453212T1 (de) 2010-01-15
AU2001286288A1 (en) 2002-03-22
KR100344103B1 (ko) 2002-07-24
EP1320902B1 (de) 2009-12-23
EP1320902A1 (de) 2003-06-25
EP1320902A4 (de) 2006-10-04

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