RU2248647C2 - Термоэлемент - Google Patents

Термоэлемент Download PDF

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Publication number
RU2248647C2
RU2248647C2 RU2002132261/28A RU2002132261A RU2248647C2 RU 2248647 C2 RU2248647 C2 RU 2248647C2 RU 2002132261/28 A RU2002132261/28 A RU 2002132261/28A RU 2002132261 A RU2002132261 A RU 2002132261A RU 2248647 C2 RU2248647 C2 RU 2248647C2
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RU
Russia
Prior art keywords
layer
thermocouple
layers
junction
thermocouple according
Prior art date
Application number
RU2002132261/28A
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English (en)
Russian (ru)
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RU2002132261A (ru
Inventor
Герхард ШПАН (AT)
Герхард ШПАН
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Герхард ШПАН
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Application filed by Герхард ШПАН filed Critical Герхард ШПАН
Publication of RU2002132261A publication Critical patent/RU2002132261A/ru
Application granted granted Critical
Publication of RU2248647C2 publication Critical patent/RU2248647C2/ru

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/93—Thermoelectric, e.g. peltier effect cooling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
RU2002132261/28A 2000-05-02 2001-04-25 Термоэлемент RU2248647C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ATA763/2000 2000-05-02
AT0076300A AT410492B (de) 2000-05-02 2000-05-02 Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht

Publications (2)

Publication Number Publication Date
RU2002132261A RU2002132261A (ru) 2004-06-10
RU2248647C2 true RU2248647C2 (ru) 2005-03-20

Family

ID=3680572

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2002132261/28A RU2248647C2 (ru) 2000-05-02 2001-04-25 Термоэлемент

Country Status (10)

Country Link
US (1) US6762484B2 (enExample)
EP (1) EP1287566B1 (enExample)
JP (1) JP3921602B2 (enExample)
KR (1) KR100581978B1 (enExample)
CN (1) CN100352073C (enExample)
AT (1) AT410492B (enExample)
AU (1) AU2001250149A1 (enExample)
DE (1) DE50100847D1 (enExample)
RU (1) RU2248647C2 (enExample)
WO (1) WO2001084641A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2419919C2 (ru) * 2007-06-29 2011-05-27 Герхард ШПАН Термоэлектрический элемент
RU2444814C1 (ru) * 2011-03-29 2012-03-10 Юрий Феликсович Верниковский Термоэлектрический кластер, способ его работы, устройство соединения в нем активного элемента с теплоэлектропроводом, генератор (варианты) и тепловой насос (варианты) на его основе
WO2020197525A1 (ru) 2019-03-26 2020-10-01 Андрей Дмитриевич ХВОРОСТЯНЫЙ Полупроводниковый термоэлектрический генератор
RU2781494C2 (ru) * 2018-03-07 2022-10-12 Ргс Дивелопмент Б.В. Устройство термоэлектрического преобразования и способ его изготовления

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US6828579B2 (en) * 2001-12-12 2004-12-07 Hi-Z Technology, Inc. Thermoelectric device with Si/SiC superlattice N-legs
US7038234B2 (en) * 2001-12-12 2006-05-02 Hi-Z Technology, Inc. Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs
WO2006005126A1 (en) * 2004-07-12 2006-01-19 Newsouth Innovations Pty Limited Reversible thermoelectric nanomaterials
US20060048809A1 (en) * 2004-09-09 2006-03-09 Onvural O R Thermoelectric devices with controlled current flow and related methods
US20060090787A1 (en) * 2004-10-28 2006-05-04 Onvural O R Thermoelectric alternators and thermoelectric climate control devices with controlled current flow for motor vehicles
DE102005036407A1 (de) * 2005-07-29 2007-02-01 Endress + Hauser Wetzer Gmbh + Co. Kg Auswerteeinheit für kontinuierliche Thermoelemente
US20080017238A1 (en) * 2006-07-21 2008-01-24 Caterpillar Inc. Thermoelectric device
US8283553B1 (en) 2007-09-21 2012-10-09 Hrl Laboratories, Llc Photon enhanced thermoelectric power generation
DE102007050741A1 (de) 2007-10-22 2009-04-23 O-Flexx Technologies Gmbh Thermoelektrischer Generator
DE102008032856A1 (de) 2008-07-14 2010-01-28 O-Flexx Technologies Gmbh Wärmeüberträger für ein thermoelektrisches Dünnschichtelement
DE102009032906A1 (de) * 2009-07-10 2011-01-20 O-Flexx Technologies Gmbh Modul mit mehreren thermoelektrischen Elementen
JP5560610B2 (ja) * 2009-08-26 2014-07-30 富士通株式会社 発電装置及びそのような発電装置を備えた発電システム
DE102009048985A1 (de) 2009-10-09 2011-04-21 O-Flexx Technologies Gmbh Modul mit mehreren thermoelektrischen Elementen
DE102010005340A1 (de) 2010-01-21 2011-07-28 O-Flexx Technologies GmbH, 47228 Verfahren und Vorrichtung zur Strukturierung einer auf einem Substrat angeordneten Lage
KR101701349B1 (ko) * 2010-06-10 2017-02-01 엘지이노텍 주식회사 냉각전용 열전소자 및 그 제조 방법
EP2591547A1 (en) * 2010-07-07 2013-05-15 Dynamic Connections, LLC Renewable energy extraction
FR2963165A1 (fr) * 2010-07-22 2012-01-27 St Microelectronics Crolles 2 Procede de generation d'energie electrique dans un dispositif semi-conducteur, et dispositif correspondant
FR2968134B1 (fr) 2010-11-26 2013-05-17 Schneider Electric Ind Sas Module thermoélectrique a rendement amélioré
DE102011001653A1 (de) * 2011-03-30 2012-10-04 O-Flexx Technologies Gmbh Thermoelektrische Anordnung
CN102779936A (zh) * 2011-05-12 2012-11-14 冯建明 Pn结四极管式热电转换和制冷制热装置
RU2477828C1 (ru) * 2011-10-25 2013-03-20 Святослав Михайлович Сергеев Тепловой диод
DE102012209619A1 (de) 2012-06-08 2013-12-12 Robert Bosch Gmbh Thermoelektrisches Element zur Umwandlung von Energie zwischen thermischer Energie und elektrischer Energie und ein Verfahren zum Auseinanderbauen des thermoelektrischen Elements
WO2014114559A1 (de) 2013-01-24 2014-07-31 O-Flexx Technologies Gmbh Thermoelektrisches bauteil, verfahren zu dessen herstellung und thermoelektrischer generator
CN104956505B (zh) * 2013-01-24 2017-09-19 欧-弗莱克斯科技有限公司 热电元件以及其制造方法
RU2576414C2 (ru) * 2014-05-21 2016-03-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Курганский государственный университет" Охлаждающее устройство
CN106876569B (zh) * 2015-12-10 2019-04-23 廖建能 热电模块
WO2018022922A1 (en) * 2016-07-27 2018-02-01 Novus Energy Technologies, Inc. Thermoelectric heat pump system
US12181351B2 (en) 2018-02-28 2024-12-31 Arthur Beckman Thermopile assembly providing a massive electrical series of wire thermocouple elements
JP2020088028A (ja) * 2018-11-19 2020-06-04 トヨタ自動車株式会社 熱電変換素子、熱電変換システム、及びそれらを用いる発電方法
DE102021209656B3 (de) 2021-09-02 2022-09-29 Nikolay Iosad Thermoelektrisches Element, thermoelektrischer Generator und Verfahren zu deren Herstellung
DE102023104908A1 (de) 2023-02-28 2024-08-29 Nikolay Iosad Thermoelektrische Elemente, thermoelektrische Module und Verfahren zu deren Herstellung

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2419919C2 (ru) * 2007-06-29 2011-05-27 Герхард ШПАН Термоэлектрический элемент
RU2444814C1 (ru) * 2011-03-29 2012-03-10 Юрий Феликсович Верниковский Термоэлектрический кластер, способ его работы, устройство соединения в нем активного элемента с теплоэлектропроводом, генератор (варианты) и тепловой насос (варианты) на его основе
WO2012134348A1 (ru) * 2011-03-29 2012-10-04 Vernikovsky Yury Felixovich Термоэлектрический кластер, способ его работы, устройство соединения в нем активного элемента с теплоэлектропроводом, генератор (варианты) и тепловой насос (варианты) на его основе
RU2781494C2 (ru) * 2018-03-07 2022-10-12 Ргс Дивелопмент Б.В. Устройство термоэлектрического преобразования и способ его изготовления
WO2020197525A1 (ru) 2019-03-26 2020-10-01 Андрей Дмитриевич ХВОРОСТЯНЫЙ Полупроводниковый термоэлектрический генератор

Also Published As

Publication number Publication date
KR100581978B1 (ko) 2006-05-23
CN100352073C (zh) 2007-11-28
AT410492B (de) 2003-05-26
ATA7632000A (de) 2002-09-15
CN1441972A (zh) 2003-09-10
DE50100847D1 (de) 2003-11-27
AU2001250149A1 (en) 2001-11-12
EP1287566B1 (de) 2003-10-22
EP1287566A1 (de) 2003-03-05
JP2003533031A (ja) 2003-11-05
KR20020093070A (ko) 2002-12-12
WO2001084641A1 (de) 2001-11-08
US6762484B2 (en) 2004-07-13
US20030042497A1 (en) 2003-03-06
JP3921602B2 (ja) 2007-05-30

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Effective date: 20170426