CN100352073C - 热电元件 - Google Patents

热电元件 Download PDF

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Publication number
CN100352073C
CN100352073C CNB018089186A CN01808918A CN100352073C CN 100352073 C CN100352073 C CN 100352073C CN B018089186 A CNB018089186 A CN B018089186A CN 01808918 A CN01808918 A CN 01808918A CN 100352073 C CN100352073 C CN 100352073C
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CN
China
Prior art keywords
layer
thermoelectric element
thermoelectric
cold end
temperature gradient
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Expired - Fee Related
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CNB018089186A
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English (en)
Chinese (zh)
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CN1441972A (zh
Inventor
格哈德·斯番
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Individual
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Publication of CN1441972A publication Critical patent/CN1441972A/zh
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Publication of CN100352073C publication Critical patent/CN100352073C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/93—Thermoelectric, e.g. peltier effect cooling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CNB018089186A 2000-05-02 2001-04-25 热电元件 Expired - Fee Related CN100352073C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ATA763/2000 2000-05-02
AT0076300A AT410492B (de) 2000-05-02 2000-05-02 Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht

Publications (2)

Publication Number Publication Date
CN1441972A CN1441972A (zh) 2003-09-10
CN100352073C true CN100352073C (zh) 2007-11-28

Family

ID=3680572

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018089186A Expired - Fee Related CN100352073C (zh) 2000-05-02 2001-04-25 热电元件

Country Status (10)

Country Link
US (1) US6762484B2 (enExample)
EP (1) EP1287566B1 (enExample)
JP (1) JP3921602B2 (enExample)
KR (1) KR100581978B1 (enExample)
CN (1) CN100352073C (enExample)
AT (1) AT410492B (enExample)
AU (1) AU2001250149A1 (enExample)
DE (1) DE50100847D1 (enExample)
RU (1) RU2248647C2 (enExample)
WO (1) WO2001084641A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103493230A (zh) * 2011-03-30 2014-01-01 欧-弗莱克斯科技有限公司 热电装置

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US6828579B2 (en) * 2001-12-12 2004-12-07 Hi-Z Technology, Inc. Thermoelectric device with Si/SiC superlattice N-legs
US7038234B2 (en) * 2001-12-12 2006-05-02 Hi-Z Technology, Inc. Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs
WO2006005126A1 (en) * 2004-07-12 2006-01-19 Newsouth Innovations Pty Limited Reversible thermoelectric nanomaterials
US20060048809A1 (en) * 2004-09-09 2006-03-09 Onvural O R Thermoelectric devices with controlled current flow and related methods
US20060090787A1 (en) * 2004-10-28 2006-05-04 Onvural O R Thermoelectric alternators and thermoelectric climate control devices with controlled current flow for motor vehicles
DE102005036407A1 (de) * 2005-07-29 2007-02-01 Endress + Hauser Wetzer Gmbh + Co. Kg Auswerteeinheit für kontinuierliche Thermoelemente
US20080017238A1 (en) * 2006-07-21 2008-01-24 Caterpillar Inc. Thermoelectric device
AT505168B1 (de) 2007-06-29 2008-11-15 Span Gerhard Dipl Ing Dr Thermoelektrisches element
US8283553B1 (en) 2007-09-21 2012-10-09 Hrl Laboratories, Llc Photon enhanced thermoelectric power generation
DE102007050741A1 (de) 2007-10-22 2009-04-23 O-Flexx Technologies Gmbh Thermoelektrischer Generator
DE102008032856A1 (de) 2008-07-14 2010-01-28 O-Flexx Technologies Gmbh Wärmeüberträger für ein thermoelektrisches Dünnschichtelement
DE102009032906A1 (de) * 2009-07-10 2011-01-20 O-Flexx Technologies Gmbh Modul mit mehreren thermoelektrischen Elementen
JP5560610B2 (ja) * 2009-08-26 2014-07-30 富士通株式会社 発電装置及びそのような発電装置を備えた発電システム
DE102009048985A1 (de) 2009-10-09 2011-04-21 O-Flexx Technologies Gmbh Modul mit mehreren thermoelektrischen Elementen
DE102010005340A1 (de) 2010-01-21 2011-07-28 O-Flexx Technologies GmbH, 47228 Verfahren und Vorrichtung zur Strukturierung einer auf einem Substrat angeordneten Lage
KR101701349B1 (ko) * 2010-06-10 2017-02-01 엘지이노텍 주식회사 냉각전용 열전소자 및 그 제조 방법
EP2591547A1 (en) * 2010-07-07 2013-05-15 Dynamic Connections, LLC Renewable energy extraction
FR2963165A1 (fr) * 2010-07-22 2012-01-27 St Microelectronics Crolles 2 Procede de generation d'energie electrique dans un dispositif semi-conducteur, et dispositif correspondant
FR2968134B1 (fr) 2010-11-26 2013-05-17 Schneider Electric Ind Sas Module thermoélectrique a rendement amélioré
RU2444814C1 (ru) * 2011-03-29 2012-03-10 Юрий Феликсович Верниковский Термоэлектрический кластер, способ его работы, устройство соединения в нем активного элемента с теплоэлектропроводом, генератор (варианты) и тепловой насос (варианты) на его основе
CN102779936A (zh) * 2011-05-12 2012-11-14 冯建明 Pn结四极管式热电转换和制冷制热装置
RU2477828C1 (ru) * 2011-10-25 2013-03-20 Святослав Михайлович Сергеев Тепловой диод
DE102012209619A1 (de) 2012-06-08 2013-12-12 Robert Bosch Gmbh Thermoelektrisches Element zur Umwandlung von Energie zwischen thermischer Energie und elektrischer Energie und ein Verfahren zum Auseinanderbauen des thermoelektrischen Elements
WO2014114559A1 (de) 2013-01-24 2014-07-31 O-Flexx Technologies Gmbh Thermoelektrisches bauteil, verfahren zu dessen herstellung und thermoelektrischer generator
CN104956505B (zh) * 2013-01-24 2017-09-19 欧-弗莱克斯科技有限公司 热电元件以及其制造方法
RU2576414C2 (ru) * 2014-05-21 2016-03-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Курганский государственный университет" Охлаждающее устройство
CN106876569B (zh) * 2015-12-10 2019-04-23 廖建能 热电模块
WO2018022922A1 (en) * 2016-07-27 2018-02-01 Novus Energy Technologies, Inc. Thermoelectric heat pump system
US12181351B2 (en) 2018-02-28 2024-12-31 Arthur Beckman Thermopile assembly providing a massive electrical series of wire thermocouple elements
JP2020088028A (ja) * 2018-11-19 2020-06-04 トヨタ自動車株式会社 熱電変換素子、熱電変換システム、及びそれらを用いる発電方法
UA120025C2 (uk) 2019-03-26 2019-09-10 Андрій Дмитрович Хворостяний Напівпровідниковий термоелектричний генератор
DE102021209656B3 (de) 2021-09-02 2022-09-29 Nikolay Iosad Thermoelektrisches Element, thermoelektrischer Generator und Verfahren zu deren Herstellung
DE102023104908A1 (de) 2023-02-28 2024-08-29 Nikolay Iosad Thermoelektrische Elemente, thermoelektrische Module und Verfahren zu deren Herstellung

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US2981775A (en) * 1958-11-12 1961-04-25 Steatite Res Corp Oxide thermocouple device
EP0124128A2 (de) * 1983-05-02 1984-11-07 Bschorr, Oskar, Dr. rer. nat. Erzeugung von Spannungsdifferenzen
US4850713A (en) * 1986-05-16 1989-07-25 Agence Nationale De Valorisation De La Recherche Device for measuring the intensity of a radiative flux and optionally also measuring the intensity of a convective flux
EP0369670A2 (en) * 1988-11-18 1990-05-23 Aspden, Harold Dr. Thermoelectric energy conversion

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US2981775A (en) * 1958-11-12 1961-04-25 Steatite Res Corp Oxide thermocouple device
EP0124128A2 (de) * 1983-05-02 1984-11-07 Bschorr, Oskar, Dr. rer. nat. Erzeugung von Spannungsdifferenzen
US4850713A (en) * 1986-05-16 1989-07-25 Agence Nationale De Valorisation De La Recherche Device for measuring the intensity of a radiative flux and optionally also measuring the intensity of a convective flux
EP0369670A2 (en) * 1988-11-18 1990-05-23 Aspden, Harold Dr. Thermoelectric energy conversion

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103493230A (zh) * 2011-03-30 2014-01-01 欧-弗莱克斯科技有限公司 热电装置
CN103493230B (zh) * 2011-03-30 2016-08-10 欧-弗莱克斯科技有限公司 热电装置

Also Published As

Publication number Publication date
KR100581978B1 (ko) 2006-05-23
AT410492B (de) 2003-05-26
ATA7632000A (de) 2002-09-15
CN1441972A (zh) 2003-09-10
DE50100847D1 (de) 2003-11-27
AU2001250149A1 (en) 2001-11-12
EP1287566B1 (de) 2003-10-22
RU2248647C2 (ru) 2005-03-20
EP1287566A1 (de) 2003-03-05
JP2003533031A (ja) 2003-11-05
KR20020093070A (ko) 2002-12-12
WO2001084641A1 (de) 2001-11-08
US6762484B2 (en) 2004-07-13
US20030042497A1 (en) 2003-03-06
JP3921602B2 (ja) 2007-05-30

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Granted publication date: 20071128

Termination date: 20170425